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1.
研究了具有死区输入的预设约束未知高阶严格反馈非线性系统的控制问题,提出了一种基于免疫函数的自抗扰预设漏斗约束自适应控制策略。首先,针对系统内部的未知问题,采用免疫函数与扩张状态观测器结合对系统内部未知项进行观测;其次,通过Lyapunov方法与漏斗控制相结合设计控制器,使得跟踪误差能够维持在预先设定的漏斗约束范围内;同时,利用双曲正切函数速率变化快这一特性设计自适应控制律,引入指令滤波器避免反步法中重复求导问题,分析证明了闭环系统所有信号的有界性。仿真实例表明了控制方法的有效性。 相似文献
2.
Ti2O3 thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti2O3 thin films, the insulator-metal transition is observed at ∼80 K, with nearly 3–4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature. 相似文献
3.
二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti2N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti2N-Sc、Ti2N-Zr体系磁矩增大;此外,Ti2N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。 相似文献
4.
Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance 下载免费PDF全文
The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS2, MoSSe and MoSe2) monolayers on reconstructed GaN surface not only effectively overcomes the larger mismatch, but also brings about novel electronic and optical properties. By adopting the reconstructed GaN (0001) surface with adatoms (N-ter GaN and Ga-ter GaN), the influences of complicated surface conditions on the electronic properties of heterostructures have been investigated. The passivated N-ter and Ga-ter GaN surfaces push the mid-gap states to the valence bands, giving rise to small bandgaps in heterostructures. The charge transfer between Ga-ter GaN surface and TMD monolayers occurs much easier than that across the TMD/N-ter GaN interfaces, which induces stronger interfacial interaction and larger valence band offset (VBO). The band alignment can be switched between type-I and type-II by assembling different TMD monolayers, that is, MoS2/N-ter GaN and MoS2/Ga-ter GaN are type-II, and the others are type-I. The absorption of visible light is enhanced in all considered TMD/reconstructed GaN heterostructures. Additionally, MoSe2/Ga-ter GaN and MoSSe/N-ter GaN have larger conductor band offset (CBO) of 1.32 eV and 1.29 eV, respectively, extending the range from deep ultraviolet to infrared regime. Our results revel that the TMD/reconstructed GaN heterostructures may be used for high-performance broadband photoelectronic devices. 相似文献
5.
Ruppeiner geometry has been successfully applied in the study of the black hole microstructure by combining with the small–large black hole phase transition, and the potential interactions among the molecular-like constituent degrees of freedom are uncovered. In this paper, we will extend the study to the triple point, where three black hole phases coexist acting as a typical feature of black hole systems quite different from the small–large black hole phase transition. For the six-dimensional charged Gauss–Bonnet anti-de Sitter black hole, we thoroughly investigate the swallow tail behaviors of the Gibbs free energy and the equal area laws. After obtaining the black hole triple point in a complete parameter space, we exhibit its phase structures both in the pressure–temperature and temperature–horizon radius diagrams. Quite different from the liquid–vapor phase transition, a double peak behavior is present in the temperature–horizon radius phase diagram. Then we construct the Ruppeiner geometry and calculate the corresponding normalized curvature scalar. Near the triple point, we observe multiple negatively divergent behaviors. Positive curvature scalar is observed for the small black hole with high temperature, which indicates that the repulsive interaction dominates among the microstructure. Furthermore, we consider the variation of the curvature scalar along the coexisting intermediate and large black hole curves. Combining with the observation for different fluids, the result suggests that this black hole system behaves more like the argon or methane. Our study provides a first and preliminary step towards understanding black hole microstructure near the triple point, as well as uncovering the particular properties of the Gauss–Bonnet gravity. 相似文献
6.
Hengcan Zhao 《中国物理 B》2022,31(11):117103-117103
CePdAl has been recently recognized as a frustrated antiferromagnetic heavy-fermion compound with a pressure- or field-tuned, extended quantum critical phase at zero temperature. Identifying characteristic signatures of the emerging quantum critical phase, which are expected to be distinct from those near a quantum critical point, remains challenging. In this work, by performing ultrasonic and thermoelectric measurements down to very low temperatures in a 3He-4He dilution refrigerator in the presence of magnetic field, we are able to obtain some crucial thermodynamic and thermal transport features of the quantum critical phase, including a frustration-related elastic softening detected by ultrasound and a Fermi-surface change probed by thermoelectric effect. 相似文献
7.
8.
Xian-Dong Li 《中国物理 B》2022,31(11):110304-110304
The Janus monolayer transition metal dichalcogenides (TMDs) $MXY$ ($M={\rm Mo}$, W, $etc$. and $X, Y={\rm S}$, Se, $etc$.) have been successfully synthesized in recent years. The Rashba spin splitting in these compounds arises due to the breaking of out-of-plane mirror symmetry. Here we study the pairing symmetry of superconducting Janus monolayer TMDs within the weak-coupling framework near critical temperature $T_{\rm c}$, of which the Fermi surface (FS) sheets centered around both $ărGamma$ and $K (K')$ points. We find that the strong Rashba splitting produces two kinds of topological superconducting states which differ from that in its parent compounds. More specifically, at relatively high chemical potentials, we obtain a time-reversal invariant $s + f + p$-wave mixed superconducting state, which is fully gapped and topologically nontrivial, $i.e.$, a $\mathbb{Z}_2$ topological state. On the other hand, a time-reversal symmetry breaking $d + p + f$-wave superconducting state appears at lower chemical potentials. This state possess a large Chern number $|C|=6$ at appropriate pairing strength, demonstrating its nontrivial band topology. Our results suggest the Janus monolayer TMDs to be a promising candidate for the intrinsic helical and chiral topological superconductors. 相似文献
9.
为了研究局部凸起对边界层转捩的影响,采用转捩SST模型分别对亚临界、临界和超临界状态下带突起的圆柱绕流问题进行了数值模拟,分析了不同Reynolds数下带突起的圆柱绕流问题的近壁面流动特征以及表面时均压力与摩擦力系数的分布和凸起对圆柱表面流动分离以及转捩的影响,对比了有无凸起两侧圆柱表面时均压力、摩擦力系数的不同. 结果表明:当来流Reynolds数处于临界区时,气流在圆柱上表面凸起处形成了3个反向旋转的漩涡,之后随着θ的增大,发生了流动分离和流动转捩现象;对于不同Reynolds数下的来流,圆柱上表面的凸起可以使气流发生转捩的位置提前;圆柱上表面的凸起使流速增大、压强降低,从而导致圆柱产生升力,随着来流Reynolds数的增大,其升力逐渐变大. 相似文献
10.