首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   197篇
  免费   31篇
  国内免费   4篇
化学   19篇
晶体学   4篇
数学   3篇
物理学   206篇
  2023年   1篇
  2022年   3篇
  2021年   2篇
  2020年   3篇
  2019年   1篇
  2018年   1篇
  2017年   2篇
  2016年   1篇
  2015年   1篇
  2014年   2篇
  2013年   14篇
  2012年   15篇
  2011年   16篇
  2010年   29篇
  2009年   22篇
  2008年   10篇
  2007年   15篇
  2006年   12篇
  2005年   20篇
  2004年   11篇
  2003年   12篇
  2002年   5篇
  2001年   5篇
  2000年   6篇
  1999年   1篇
  1998年   2篇
  1997年   9篇
  1996年   2篇
  1995年   1篇
  1993年   2篇
  1992年   1篇
  1991年   2篇
  1989年   1篇
  1988年   2篇
排序方式: 共有232条查询结果,搜索用时 16 毫秒
1.
以YBa_(2)Cu_(3)O_(7)(YBCO)带材为代表的二代高温超导带材被广泛应用于各类超导装备中,由于YBCO超导带材生产长度的限制,其接头技术将在带材的实用化发展中起到至关重要的作用,其中低熔点焊料焊接接头技术由于其工艺简单且能够满足目前二代高温超导材料的应用需求,成为现阶段接头制备的主流技术.本文基于YBCO基本属性,结合目前国内外的YBCO带材生产现状,系统全面地调研了低熔点焊料焊接接头技术的制作工艺及其性能的影响因素,明确了低熔点焊料焊接接头的关键影响因素,梳理了二代高温超导带材接头的焊接工艺流程,为二代高温超导带材接头的制备提供参考。  相似文献   
2.
针对高温超导一代Bi2223/Ag带材、二代YBCO带材的焊接问题,理论计算分析了搭接长度、焊锡层厚度对带材接头电阻的影响,并对焊接长度对接头电阻的影响进行了实验验证。实验结果表明:增加焊接搭接长度可以减小接头电阻,两种超导带材的接头电阻皆同焊接搭接长度成反比。当焊接长度在3—5cm,焊料厚度在微米量级时,Bi2223/Ag带材、YBCO带材各自之间的接头电阻在液氮温度下均可控制在10-8Ω左右,能够满足超导装置稳定运行的要求。  相似文献   
3.
YBCO线圈的交流损耗直接关系到YBCO设备的运行成本及稳定性。实现对YBCO线圈交流损耗的快速、准确测量,对于开展YBCO涂层导体的应用研究具有重要的意义。文中采用电测量法,在77K、零场和不同频率条件下,对YBCO线圈通以不同运行电流时产生的交流传输损耗进行测量。构建了YBCO线圈交流损耗的数值计算模型,对YBCO线圈交流损耗进行理论研究,最后将实验数据与理论计算结果进行比较,两者结果基本一致。可以发现,YBCO线圈在频率低于75Hz时,交流传输损耗随频率的增大而减小,当频率从75Hz增加到195Hz时,交流传输损耗随频率的增大而增加。  相似文献   
4.
Jack J. Shi  Judy Z. Wu 《哲学杂志》2013,93(34):4205-4214
A theoretical study of a structural transition of secondary phase oxide nanorods in epitaxial YBa2Cu3O7?δ films on vicinal SrTiO3 substrates is presented. Two possible types of film/substrate interface are considered, with one assuming complete coherence, while the other is defective as manifested by the presence of antiphase grain boundaries. Only in the former case does the increase of the vicinal angle of the substrate lead to a substantial change of the strain field in the film, resulting in a transition of the nanorod orientation from the normal to the in-plane direction of the film. The calculated threshold vicinal angle for the onset of the transition and lattice deformation of the YBa2Cu3O7?δ film due to the inclusion of the nanorods is in very good agreement with experimental observations. This result sheds lights on the understanding of the role of the film/substrate lattice mismatch in controlling self-assembly of dopant nanostructures in matrix films.  相似文献   
5.
丁发柱  古宏伟  张腾  王洪艳  屈飞  彭星煜  周微微 《物理学报》2013,62(13):137401-137401
本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y2O3/BaCeO3YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y2O3/BaCeO3YBCO膜的临界电流密度达到5.0 MA/cm2 (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y2O3和BaCeO3可能在YBCO内部起到了 有效的钉扎磁通作用. 关键词: 钇钡铜氧薄膜 2O3和纳米BaCeO3')" href="#">纳米Y2O3和纳米BaCeO3 磁通钉扎 三氟乙酸盐-金属有机沉积  相似文献   
6.
The effect of BaZrO3 (BZO) doping is systematically studied in YBa2Cu3O6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.  相似文献   
7.
本文研究了YBCO高温超导磁悬浮系统在竖直方向上不同的悬浮高度,不同的振动频率扰动下的振动属性.研究表明在一般的小的扰动下,悬浮系统类似于一个弹簧系统,该系统可以恢复到初始的悬浮高度.而当系统受到一个共振频率的扰动时,系统会发生剧烈的振动,会引起能量的损失,悬浮高度的降低.系统的共振频率会随着系统初始悬浮高度的降低而增...  相似文献   
8.
YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO3 substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced Jc values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, Jc values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.  相似文献   
9.
The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(ZrxTi1−x)O3 (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the FR(LT)FR(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the FR(LT)FR(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10−6 C/(cm2 K). The PZT film deposited at 800 °C had the highest remnant polarization (Pr) and the lowest coercive field (Ec), with the values of 34.3 μC/cm2 and 41.7 kV/cm respectively.  相似文献   
10.
本文介绍了沿c轴方向排布复层籽晶制备YBCO超导单畴的方法.该方法能够使123晶畴在不同深度进行生长.通过c轴方向籽晶的排布,研究了YBCO单畴中的(001)/(001)晶界.虽然由于压模中籽晶ab面的倾斜,造成部分(001)/(001)晶界出现大角晶界,使晶界上残余有液相,但仍有晶界连接良好、晶界上不存在残余液相和211粒子、错配角小于5°的(001)/(001)晶界的形成.对于制备有深度要求的单畴块材,复层籽晶法是一种有效的生长方法.在定向控制好籽晶方向的条件下,该方法可以提高超导单畴的生长深度.在77K,0.5T下,测试该样品磁悬浮力达到37N.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号