液相色谱-串联质谱法测定蔬菜和水果中6种新型酰胺类杀菌剂的残留量

建立了蔬菜、水果中啶酰菌胺、氟啶酰菌胺、环氟菌胺、嘧菌胺、双炔酰菌胺和硅噻菌胺6种新型酰胺类杀菌剂残留量的液相色谱-串联质谱(liquid chromatography-tandem mass spectrometry, LC-MS/MS)检测方法。试样经乙腈提取、Florisil固相萃取柱净化、以乙腈和水为流动相梯度洗脱、结合新型核壳型填料色谱柱(Poroshell 120 EC-C₁₈)分离,采用电喷雾正离子扫描、多反应监测模式质谱检测,外标法定量。结果表明:固相萃取结合新型色谱柱分离解决了酰胺类农药分析中基质效应强的难点问题。6种杀菌剂在0.5~100 μg/L范围内线性关系良好,相关系数(r)≥0.9990;对7种蔬菜及3种水果进行0.5、5和50 μg/kg 3个加标水平的回收试验,回收率为65%~124%,相对标准偏差(RSD, n=5)为1%~18%; 6种杀菌剂的方法检出限(S/N≥3)为0.10~0.17 μg/kg。该净化、分离模式显著降低了蔬菜、水果中6种新型酰胺类农药的基质效应,方法简单准确,可满足蔬菜和水果中啶酰菌胺等6种新型酰胺类杀菌剂残留检测的要求。     

Au@碳球复合结构中Au颗粒位置调控光吸收

采用时域有限差分（FDTD）法研究Au纳米颗粒@碳球（AuNPs@CS）复合结构的光吸收控制。发现Au纳米颗粒@碳球复合结构中Au颗粒的位置可以控制复合结构光吸收。模型计算中选取两粒Au纳米颗粒以最佳深度（0 nm）嵌入碳球表面。当两粒Au颗粒球心与碳球球心夹角为22.5°和45°时,复合结构光吸收较单一碳球光吸收明显增强;当夹角为315°、270°、180°、90°时,光吸收增量逐渐减小;当夹角为337.5°时,光吸收量低于单一碳球。这一结果主要归因于Au纳米颗粒位置变化可引起表面等离子体光强度和光散射方向的变化。改变碳球表面Au纳米颗粒的数量和位置,可以进一步调节AuNPs@CS复合结构的光吸收。     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

纪念劳厄发现X射线衍射90周年学术报告会简讯

20 0 2年是劳厄 (MaxVonLaue)发现晶体X射线衍射 90周年 .劳厄的这一发现是 2 0世纪物理学的一件意义深远的大事 ,使物理学中关于物质结构和研究领域从宏观进入微观 ,从经典过渡到现代 ,发生了质的飞跃 .同时 ,X射线衍射的发现和研究对生物、材料科学和化学的发展起到了巨大的推动作用 .中国物理学会和中国晶体学会为纪念劳厄发现X射线衍射 90周年 ,由中国科学院物理研究所于 2 0 0 2年 12月 10日召开了学术报告会 ,会议邀请了部分院士、专家和广大同行 ,就X射线衍射的发现、发展历程 ,最新进展和研究展望以及在相关领域的应用进行了广泛…     

Pr_(0.2)Yb_(0.8-x)La_xBa_2Cu_3O_(7-δ)体系的超导电性和磁性

本文研究了Pr_(0.2)Yb_(0.8-x)La_xBa_2Cu_3O_(7-δ)体系的晶体结构,超导电性和磁性。结果表明,在Pr含量不变的条件下,超导转变温度随稀土离子半径增大而降低,当x≈0.65时,Tc=0;电子比热和费密能级上的态密度也随稀土离子半径增大而降低。并讨论了稀土离子半径与杂化的关系。     

Chiral Symmetry Breaking During Growing Process of NaClO3 Crystal under Direct-Current Electric Field

We investigate the influence of dc electric field on chiral symmetry breaking during the growing process of NaClO3 crystal. Nucleation and growth of NaClO3 are completed from an aqueous solution by a fast cooling temperature technology. A pair of polarization microscopes are used to identify a distribution of chiral crystals. Experimental results indicate that the dc electric field has an effect on distribution of chirality, but the direction of the dc electric field is not sensitive to the chiral autocatalysis and selectivity, i.e. the nature convection driving by the gravity does not play an important role on a thin layer of NaClO3 solution. The experimental phenomena may be elucidated by the ECSN mechanism.     

宽禁带半导体碳化硅单晶生长和物性研究进展

本文介绍了最近几年在SiC单晶生长和晶片加工技术产业化进程中的系列进展。研究出SiC单晶生长的扩径技术,4英寸SiC晶体单晶直径达105 mm。晶体质量逐步提高,至2011年,大部分晶片微管密度小于1个/cm2,反映晶体结晶质量的X射线摇摆曲线半高宽小于20″;生长的导电型SiC晶体电阻率小于0.02Ω.cm,半绝缘型SiC晶体电阻率大于108Ω.cm,电阻率分布均匀性良好。研究出即开即用SiC晶片批量加工技术,晶片表面粗糙度低于0.2 nm,翘曲度和总厚度变化满足工业化批量生产要求。与此同时,在基础物性研究方面也取得了系列研究成果。首次在实验上给出了直接证据证明SiC晶体中的双空位能够诱导出磁性,并从理论上予以证明。利用多种方法在SiC衬底上成功制备出大面积、高质量、性能优异的石墨烯。     

Raman Spectrum of Epitaxial Graphene on SiC （0001） by Pulsed Electron Irradiation

We report new Raman features of epitaxial graphene （EG） on Si-face 4H-SiC prepared by pulsed electron irradiation （PEI）. With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC（O001） and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si- and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed.     

La-Mn共掺杂的钛酸钡陶瓷还原再氧化研究

以MnO2为受主,La2O3为施主,采用传统高温固相法对钛酸钡陶瓷进行掺杂,并对还原气氛下烧结的样品分别在900 ℃和1000 ℃的温度下进行再氧化处理.采用XRD和电性能测试研究了镧锰共掺杂和再氧化工艺对于钛酸钡陶瓷阻温特性及微观结构的影响.结果表明:钛酸钡陶瓷的阻温特性与施主、受主的掺杂比例和烧结气氛有关;与在空气下烧结相比,在还原气氛下烧结能明显的提高施主掺杂的临界浓度,同时随着再氧化温度从900 ℃提高到1000 ℃,PTC效应明显增强.BaTiO3晶粒尺寸随着施主掺杂浓度的提高而变小.Mn离子的掺入使钛酸钡晶格结构更为紧密,阻碍了晶格内部氧离子向外部的扩散,导致了明显的PTC效应.     

La_2O_3掺杂对BaTiO_3-Nb_2O_5-Fe_2O_3陶瓷的晶体结构和介电性能的影响

研究了La2O3 掺杂对BaTiO3-Nb2O5-Fe2O3(BTNF)基陶瓷的晶体结构和介电性能的影响.XRD分析表明:La2O3掺杂陶瓷的(200)和(002)晶面衍射峰都发生了明显分裂,说明陶瓷均以四方相为主晶相.随着La2O3含量的增加,四方率先增大后减小.用SEM研究La2O3对BTNF基陶瓷微观结构的影响,结果表明:随着La2O3掺杂量的增加,试样的晶粒明显变小,La2O3显著的抑制了晶粒的生长.当La2O3掺杂量为0.15 mol%时,陶瓷晶粒生长比较均匀.陶瓷的室温介电常数大体上呈现出先增大后减小的趋势,当La2O3掺杂量为0.15 mol%时,有最大介电常数4562.