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研究了用射频磁控溅射方法制备的[Co(1.5nm)/V(dV)]20(0.5nm≤dV≤4nm)多层膜的结构和磁性.用X射线衍射、透射电子显微镜、高分辨率透射电子显微镜等手段对其结构的分析,表明它们层状周期结构良好,沿膜的生长方向具有fcc Co(111)和bcc V(110)织构,且是由小的柱状晶粒构成的多晶薄膜.界面一定程度的合金化,使其成为成分调制周期结构,也是它们的一个结构特征.由其铁磁共振谱计算得到较小的g因子和4πMe
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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments 下载免费PDF全文
In this study, the unipolar resistive switching(URS) and bipolar resistive switching(BRS) are demonstrated to be coexistent in the Ag/Zn O/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies(VO) and metal-Ag conducting filaments(CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching(RS)characteristics(e.g., forming and switching voltages, reset current and resistance states) between these two modes based on VO- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory. 相似文献
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研究了用射频磁控溅射方法制备的[Co(15nm)/V(dV)]20(05nm≤dV≤4nm)多层膜的结构和磁性.用X射线衍射、透射电子显微镜、高分辨率透射电子显微镜等手段对其结构的分析,表明它们层状周期结构良好,沿膜的生长方向具有fcCo(111)和bccV(110)织构,且是由小的柱状晶粒构成的多晶薄膜.界面一定程度的合金化,使其成为成分调制周期结构,也是它们的一个结构特征.由其铁磁共振谱计算得到较小的g因子和4πMef值,表明多层膜界面存在一定程度的合金化.对于V层厚度小于22nm的多层膜,观测到自旋波共振谱,并作了分析.计算了层间耦合常数,说明Co层之间存在较弱的层间交换耦合作用. 相似文献
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夹层聚能装药作用过程的数值模拟 总被引:7,自引:0,他引:7
基于凝聚炸药冲击起爆的Lee-Tarver模型,利用AUTODYN有限元计算软件对夹层聚能装药作用过程进行了数值模拟。分别对夹层聚能装药爆轰波形传播过程及其特性参数进行了数值计算,对典型聚能装药采用单一结构装药、夹层装药的射流成型过程进行了数值研究,最后对不同爆速炸药匹配关系的夹层聚能装药射流参数进行了计算分析。计算结果表明,相对于单一结构装药,夹层装药射流头部速度提高了20%,夹层聚能装药能有效提高聚能金属射流头部速度、提高侵彻深度、增加炸药装药的作功能力。 相似文献
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