Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.     

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition

We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).     

高压CO2在虾肉糜中的纵向吸附过程

为了研究高压CO_2(High Pressure Carbon Dioxide,HPCD)在蛋白质中的吸附行为,以圆柱形虾肉糜为研究对象,构建纵向溶解吸附模型,采用磁悬浮天平高温高压等温吸附仪测试HPCD在虾肉糜中的纵向吸附质量,研究压强和温度对纵向吸附质量的影响规律。结果表明:仪器直接测得的吸附质量为CO_2在虾肉糜中的纵向过剩吸附质量,不能准确反映纵向绝对吸附质量;在吸附未饱和时采用饱和吸附相体积法将过剩吸附质量校正为绝对吸附质量,在吸附饱和时采用吸附相密度法将过剩吸附质量校正为绝对吸附质量;绝对吸附质量更能真实地反映CO_2在虾肉糜中的吸附能力。在等温条件下,随着压强升高,CO_2在虾肉糜中的纵向绝对比吸附先急剧增加达到峰值,后稍下降并趋于平稳;在等压条件下,随着温度升高,CO_2在虾肉糜中的纵向绝对比吸附下降。35～60℃时虾肉糜对CO_2的纵向绝对比吸附最大值分布在45.53～111.49 cm3/g。研究结果为建立HPCD在虾肉糜中纵向吸附模型提供了基础数据,并为控制虾肉糜形成凝胶的品质提供技术参考。     

环境激励下基于柔度矩阵分解的损伤诊断

为了解决环境激励作用下结构自由度不完备对损伤诊断的影响,提出了一种基于自由度缩聚的比例柔度矩阵分解损伤诊断法.利用附加质量法求解出环境激励作用下振型关于质量归一化因子.进而根据质量归一化因子和比例柔度矩阵系数之间的关系,构建出其比例柔度矩阵,再通过使用QR矩阵分解法对构建出的比例柔度矩阵进行分解.以分解后得到的三角矩阵(R矩阵)作为研究对象,将〖WTHX〗R〖WTBX〗矩阵经过相应的数学算法处理得到最终损伤定位指标.算例研究表明:在环境激励作用下考虑自由度缩聚的影响,无论对于单损伤还是多损伤,所提损伤定位指标均表现出较高的准确性,且具有一定的鲁棒性.该文基于矩阵分解法推导出的损伤定位指标可以应用在环境激励作用下的损伤诊断,同时也为自由度不完备结构的损伤诊断提供了新研究思路.     

ATRP法合成二十元、二十八元线形环化聚合物

采用以甲苯为聚合介质的ATRP聚合体系,以双甲基丙烯酸二醇酯为单体,合成了具有二十和二十八元环的线形环化聚合物,聚合物具有窄分子量分布.聚合动力学显示随着链长的增加,环化反应速率变慢.根据聚合物的1H-NMR谱图、由1H-NMR端基分析得到聚合度DPNMR、以及GPC图谱结果,证实获得了线形环化聚合物.TGA测试结果表明2种聚合物的起始分解温度均大于372℃,具有比PMMA更好的热稳定性.     

基于静力残余力向量的结构损伤评估方法

残余力向量法是一类常用的损伤识别方法,现有的残余力向量法都是基于动力测试的模态参数,和动力测试数据相比,静力测试数据往往精度更高,且无需模态分析等复杂操作.鉴于此,本文提出一种静力残余力向量法用于结构损伤评估.所提方法利用静力测试位移数据,并结合结构有限元模型的刚度矩阵,定义了静力残余力向量,根据该向量中不为零的元素来判断损伤自由度,再根据自由度和单元之间的对应关系来确定发生损伤的位置,并进一步提出一种求解损伤参数的代数解法.另外,针对实践中角位移难以测量的情况,进一步提出了一种静力缩聚残余力向量法,拓宽了所提方法的应用范围.以桁架结构和梁结构模型为例对所提方法进行了验证,数值算例结果说明所提方法合理有效.     

A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.     

自由度缩聚的柔度损伤诊断法

为了提高结构在模型自由度缩聚情况下的损伤识别结果的精度，本文推导了基于改进Guyan 缩聚法的结构振动方程式．通过求解振动特征方程，利用其特征值和特征向量构建结构缩聚后的柔度矩阵表达式，并引入结构缩聚后的柔度曲率矩阵差和柔度曲率矩阵变化率两个损伤指标，将引入的新损伤指标应用于平面桁架的损伤识别．研究表明：不管是单损伤还是多损伤，仅仅需要一阶模态参数，利用其引入的新损伤指标就可以精确地识别出损伤杆单元位置．即使在高强度噪音的影响下，也保证了其损伤识别结果的精确性．验证了本文基于改进的Guyan 缩聚法推导出的损伤指标具有较好的损伤定位性能和较高的抗噪性能．     

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10¹¹ cm^-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.