CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

Measurements of the Cross-sections of Produced Short-Lived Nuclei Induced by Neutrons around 14 MeV on Isotopes of Tungsten

New experimental cross-section data for the180 W(n,2 n)179 mW,186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beams are produced by means of the3 H(d,n)4 He reaction. The gamma activities of the product nuclei are measured by a high-resolution gamma-ray spectrometer with a coaxial high-purity germanium detector. The neutron fluence is determined using the monitor reaction93 Nb(n,2 n)92 mNb. The results in the current work are discussed and compared with the measurement results found in the literature. It is shown that these higher accuracy experimental cross-section data around the neutron energy of 14 MeV agree with some previous experimental values from the literature within experimental uncertainties.     

硫脲掺杂金刚石的高温高压合成及FT-IR光谱研究

利用温度梯度法,在6.5 GPa、1 300～1 350℃的高温高压极端物理条件下,通过在FeNiCo-C合成体系中添加硫脲(CH4N2S)成功合成了金刚石,所合成的晶体呈现出黄色且具有六-八面体形貌.利用扫描电镜(SEM)对所合成金刚石的表面形貌进行了表征,测试结果表明,随着合成体系中CH4N2S添加量的逐渐增加,所合成金刚石的表面变得逐渐粗糙.借助傅里叶红外(FT-IR)光谱对金刚石样品内部的氮、氢缺陷以及化学键结构进行了测试分析,结果表明,金刚石中的氢元素以-CH3,-CH2-,C-H形式存在,而其内部的氮杂质以C心、A心形式存在.此外,在3 300～3 600 cm-1观察到NH的吸收带.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

触媒组分对高温高压金刚石大单晶生长及裂纹缺陷的影响

本文利用六面顶压机,在5.6 GPa, 1250—1450℃的高压高温条件下,分别选用FeNiCo和NiMnCo触媒合金开展了金刚石大单晶的生长实验,系统地考察了触媒组分对金刚石单晶裂纹缺陷的影响.首先,通过对两种组分触媒晶体生长实验对比发现,金刚石大单晶裂纹缺陷出现的概率与触媒组分相关联.同NiMnCo触媒相比, FeNiCo触媒生长的金刚石单晶更容易出现生长裂纹.我们认为,这与FeNiCo触媒黏度高、流动性差、碳素输运能力差、生长中晶体比表面积大,进而导致其对生长条件稳定性的要求较高有关.其次,两种触媒极限增重速度和生长时间的关系曲线表明,相同生长时间条件下, NiMnCo触媒生长金刚石单晶的极限增重速度相对较大.再次,扫描电子显微镜测试结果表明,裂纹缺陷的出现与否同晶体表面平整度的高低无必然联系,表面平整度高的金刚石单晶内部也可能存在裂纹缺陷.最后,经对金刚石单晶傅里叶微区红外测试结果进行分析,得出了氮杂质含量的高低与金刚石单晶裂纹缺陷的出现与否无内在关联性的研究结论.     

Activation cross-sections of titanium isotopes at neutron energies of 13.5–14.8 MeV

The cross-sections for ~(46) Ti(n,2 n)~(45) Ti, ~(46) Ti(n,p)~(46 m+g) Sc+~(47) Ti(n,d*)~(46 m+g) Sc, ~(46)Ti(n,p)~(46 m+g) Sc, ~(47) Ti(n,p)~(47) Sc+~(48) Ti(n,d*)~(47) Sc, ~(47) Ti(n,p)~(47) Sc, ~(48) Ti(n,p)~(48) Sc+~(49) Ti(n,d*)~(48) Sc,~(48) Ti(n,p)~(48) Sc, and ~(50) Ti(n,α)~(47) Ca reactions were investigated around neutron energies of 13.5–14.8 Me V by means of the activation technique. Fast neutrons were produced by the~3 H(d,n)~4 He reaction. Neutron energies from different directions in the measurements were obtained in advance using the method of cross-section ratios for ~(90) Zr(n,2 n)~(89 m+g) Zr and ~(93) Nb(n,2 n)~(92 m) Nb reactions. The results obtained are analyzed and compared with the experimental data provided by the literature and verified nuclear data in the JEFF-3.3,CENDL-3.1, ENDF/B-VIII.0 libraries, as well as results calculated by Talys-1.9 code.     

飞行时间质谱仪固体样品自动进样系统研制

以常规型飞行时间质谱仪为基础,通过配置移动平台、样品杆、工业相机、LED灯源、工业显示屏等部件,研制了一套飞行时间质谱仪用固体样品自动进样系统,实现了固体有机样品的直接进样分析。该装置具有一定的普适性,可为相关实验室设备升级改造提供借鉴和参考。该装置可进行难溶未知有机化合物的结构剖析,实现目标物的快速筛查,且操作人员可实时观测锥孔处样品状态并可软件操控进样位置,实现人机分离的自动化测试。     

快速冷冻干燥法制备多孔氧化硅陶瓷

为制备氧化硅多孔陶瓷,尝试了快速冷冻干燥法,探索了氧化硅浆体的分散剂和pH值对孔结构的影响。结果表明:使用0.1wt%六偏磷酸钠作为分散剂时,孔壁处团聚现象明显;改用聚甲基丙烯酸钠团聚显著减少。主要原因是氧化硅表面的Si-OH可能与六偏磷酸钠络合成Si-Na_4P_6O_(18)~-,但其在水中易断裂,减弱了颗粒之间排斥力,未能抑制团聚;而聚甲基丙烯酸钠吸附在氧化硅表面,可能形成Si-C_4H_5O_2等空间位阻抑制团聚。在聚甲基丙烯酸钠的基础上再调节浆体pH值至~10使氧化硅的zeta电位达到~-60 mV,可更好抑制团聚。综上所述冻干法适合制备开口通孔结构的多孔氧化硅陶瓷。     

水平表面混合蒸气Marangoni凝结瞬态过程特性的实验研究

本文设计、搭建了水平表面上凝结换热实验系统,对水-酒精混合蒸气Marangoni凝结的瞬态过程进行了实验研究。研究发现:随着冷却水温度、酒精蒸气浓度的升高,在凝结瞬态过程中,表面过冷度先出现周期性变化,进而周期性减弱直至出现不规律变化。蒸气流速的升高总会促进表面过冷度出现周期性变化。结合实验过程中凝结形态变化规律,总结得到了凝结瞬态过程中的三种典型类型:成膜类型、液珠周期性运动类型与液珠不规律运动类型。     

量子点场效应单光子探测器二维电子气载流子浓度研究

设计了一种基于场效应晶体管的量子点场效应单光子探测器(quantum dot field effect transistor,QDFET),建立了二维电子气(two-dimensional electron gas,2DEG)的薛定谔方程和泊松方程,通过对薛定谔方程和泊松方程的自洽求解,对2DEG的载流子浓度进行了模拟。模拟结果显示,AlGaAs的Al组分、δ掺杂层的掺杂浓度以及隔离层的厚度对于2DEG的载流子浓度均有影响。为了使2DEG具有较高的载流子浓度,AlGaAs的Al组分应为0.2~0.4,δ掺杂浓度应为6~8×10~(13)/cm~2,隔离层厚度应在50nm以下。通过对2DEG的载流子浓度进行研究,可以掌握2DEG载流子浓度的影响因素,从而通过优化QDFET结构,可提高2DEG的载流子浓度。这对于高灵敏度QDFET的制备具有重要的意义和应用价值。