国产电气石(z轴切割)压电性能的测量

前言电气石是一种斜角棱形压电晶体,z轴为它的电轴。它是一种天然晶体(目前已出现人造电气石晶体)。它的特点是:压电性能稳定;侧向灵敏度(指在x或y轴向加以单位载荷时在z平面上产生的电荷,即d_(31))小;机械强度高;对温度比较敏感,因而电气石作为流体静 ...     

Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films

Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

爆炸力学测试的国外情况

爆炸力学在力学领域中是一门比较新的分支,它的发展对于国防尖端技术和国民经济建设有着重大的推动作用。虽然早在上一世纪弹性动力学的数学理论就已经具有较完善的形式,但当时还找不到合适的测试方法来观察应力波在介质中的传播,因而未能得到广泛的应用。直到本世纪三十年代以后,一方面由于第二次世界大战的推动,另一方面电子技术也逐渐成熟,可以解决应力波的观测问题,于是便开始重视研究材料在强脉冲载荷作用下的动力性质,从而发展了固体中塑性波的理论及冲激波的理论。     

测量土、岩石介质中的动态应力用的压电式应力计

本文介绍一种压电式应力计,它的主要性能是:测量量程为10-1000kgf/cm~2;响应时间小于7μs;线性误差小于士1％;综合应力测量误差小于±10％,该应力计可用于测量土、岩石和混凝土介质中的动态应力,也可用于测量动态力和流体介质中的动态压力。     

有关概率密度函数的注记

指出在概率统计教学中有关密度函数的一些需要补充说明的问题,同时对密度函数的一条性质作出更加严格的证明.     

粘性依赖于密度的可压缩Navier-Stokes方程

The global existence of solutions to the equations of one-dimensional compressible flow with density-dependent viscosity is proved. Specifically,the assumptions on initial data are that the modulo constant is stated at x=∞ ＋and x=-∞ ,which may be different ,the density and velocity are in L^z ,and the density is bounded above and below away from zero. The results also show that even under these conditions, neither vacuum states nor concentration states can be formed in finite time.     

关于压力传感器动态测试和标定中的两个疑点澄清

在动态压力测量技术中,总是首先关心传感器的波形质量和它的灵敏度。这是有关测量真实性和保证测量精度的两个重要问题。 目前存在两种不全面的看法:一是测得的压力波形不合理想,统归咎于传感器质量不佳;二是由于激波管标定所得灵敏     

Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application

We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.