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采用稳态和时间分辨发光光谱,研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加,观察到量子点中激子发光的Stark 效应.通过选择不同波长的激光线激发量子点样品,发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致,而激子寿命的增加源于电场导致激子的Stark效应. 关键词: InAs单量子点 Stark效应 电子-空穴分离  相似文献   
2.
We report experimental realization of a quantum version of Maxwell's demon using solid state spins where the information acquiring and feedback operations by the demon are achieved through conditional quantum gates.A unique feature of this implementation is that the demon can start in a quantum superposition state or in an entangled state with an ancilla observer. Through quantum state tomography, we measure the entropy in the system, demon, and the ancilla, showing the influence of coherence and entanglement on the result. A quantum implementation of Maxwell's demon adds more controllability to this paradoxical thermal machine and may find applications in quantum thermodynamics involving microscopic systems.  相似文献   
3.
李园  窦秀明  常秀英  倪海桥  牛智川  孙宝权 《物理学报》2011,60(1):17804-017804
利用分子束外延生长InAs单量子点样品,温度为5 K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT) 实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程. 关键词: InAs 单量子点 单、双激子 荧光光谱 级联辐射  相似文献   
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正A:Experimental Setup We use a home-built confocal microscopy with an oil immersed objective lens to address and detect single nitrogen vacancy(NV)centers in a single-crystal diamond sample,which is mounted on a doughnut shape,three-axis,closed-loop piezoelectric actuator  相似文献   
5.
By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction.  相似文献   
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李园  窦秀明  常秀英  倪海桥  牛智川  孙宝权 《物理学报》2011,60(3):37809-037809
利用分子束外延生长 InAs 单量子点样品,测量了温度为 5 K 时单量子点的荧光(PL)光谱.采用时间关联光子强度测量(HBT)验证了 PL 光谱具有单光子发射特性.单光子通过马赫曾德尔 (MZ) 干涉仪,验证了单光子自身具有干涉特性.测量了当 MZ 干涉仪两臂偏振方向的夹角改变时对应的单光子干涉及条纹可见度的变化. 关键词: 量子点单光子源 反群聚效应 马赫曾德尔干涉  相似文献   
7.
在某大口径火炮焊接钢药筒退壳后残余变形实际测量现象规律的基础上,运用非线性有限元分析作为物理模型正问题分析工具,对火炮发射过程中影响该药筒行为的关键因素和作用机理进行启发式反演。通过有限元反演计算,揭示了筒体上热冲击引起的瞬态温升是决定药筒残余变形和抽壳阻力的一个关键因素,得到了筒体瞬态温度增量分布规律。在此基础上通过有限元分析获得的药筒抽壳阻力与实际测试结果一致。  相似文献   
8.
Learning the Hamiltonian of a quantum system is indispensable for prediction of the system dynamics and realization of high fidelity quantum gates.However,it is a significant challenge to efficiently characterize the Hamiltonian which has a Hilbert space dimension exponentially growing with the system size.Here,we develop and implement an adaptive method to learn the effective Hamiltonian of an 11-qubit quantum system consisting of one electron spin and ten nuclear spins associated with a single nitrogen-vacancy center in a diamond.We validate the estimated Hamiltonian by designing universal quantum gates based on the learnt Hamiltonian and implementing these gates in the experiment.Our experimental result demonstrates a well-characterized 11-qubit quantum spin register with the ability to test quantum algorithms,and shows our Hamiltonian learning method as a useful tool for characterizing the Hamiltonian of the nodes in a quantum network with solid-state spin qubits.  相似文献   
9.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 8OK, the second-order correlation function at zero time delay, g^(2)(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.  相似文献   
10.
Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In0.17Ga0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates.  相似文献   
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