衬底温度对PLD方法制备的ZnO薄膜的光学和电学特性的影响

利用脉冲激光沉积法(PLD)在c面蓝宝石衬底上制备了ZnO薄膜并对其进行了X射线衍射(XRD)、反射式高能电子衍射(RHEED)、光致发光(PL)谱和霍尔(Hall)测试。RHEED和XRD分析表明,温度在350℃至550℃之间时,ZnO薄膜的结晶质量随着衬底温度的升高而提高,当衬底温度进一步升高后,ZnO薄膜的结晶质量开始下降。四个样品中,衬底温度为550℃的样品具有最清晰的规则点状RHEED图像和半高宽最窄的(0002)衍射峰。PL谱和Hall测量的结果表明,衬底温度为550℃的样品还具有最好的发光性质和最大的霍尔迁移率。     

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.     

Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

生长和退火温度对磁控溅射法制备的ZnO薄膜性能的影响

利用磁控溅射法于500 ℃、550 ℃、600 ℃和650 ℃下在Al2O3(001)衬底上生长ZnO薄.对生长的ZnO薄膜后分别进行了800 ℃退火和1000 ℃退火处理.利用X射线衍射(XRD)、霍尔测试仪和透射谱仪对薄膜的结构、电学和光学性质进行了研究,结果表明合适的生长温度和退火温度能够提高ZnO薄膜的结晶质量和性能.     

CO2激光加热硅芯光纤预制棒的温场分布

研究了10.6 m CO2激光加热硅芯光纤预制棒的温场分布，在考虑预制棒表面热辐射和空气对流的情况下，用有限元软件COMSOL Multiphysics建立了激光加热预制棒的传热物理模型，比较了激光功率、激光光斑半径和预制棒直径对温场分布的影响，同时提出CO2激光加热与石墨炉加热结合调节温场分布的方法。仿真结果显示，激光参数和预制棒直径都会明显影响预制棒温场分布，且激光光斑半径3 mm，功率达到400 W的激光器可用于直径10 mm内的硅芯光纤预制棒制备硅芯光纤。通过CO2激光加热和石墨炉加热相结合的加热方式，能更加灵活有效地调节预制棒的温场分布，构建适合硅芯光纤拉丝的温场条件。     

无催化法制备ZnO纳米针的结构及光学特性

采用无催化脉冲激光沉积(PLD)方法,在InP(100)衬底上生长纳米ZnO针状结构。采用扫描电子显微镜(SEM)、X射线衍射(XRD)以及光致发光(PL)谱等对ZnO纳米针的形貌、晶体结构和光学特性表征。SEM图像观察到ZnO纳米针状结构具有一定的取向性。XRD测试在2θ=34.50°处观测到强烈的ZnO(002)衍射峰,证实ZnO纳米针具有较好的c轴择优取向。室温PL谱在379nm处观察到了较强的自由激子发射峰(半峰全宽为13.5nm),而微弱的深能级跃迁峰位于484nm,二者峰强比值为11∶1,表明生长的纳米ZnO结构具有较高的光学质量。     

点火能量对单基发射药燃烧爆炸特性的影响

为了探究点火能量对单基发射药燃烧爆炸特性的影响，自主设计了发射药燃烧爆炸试验装置。使用黑火药对单基发射药点火，开展燃烧爆炸实验。通过对铝制鉴定板及约束钢筒内壁烧蚀痕迹的分析，获得不同点火能量对单基发射药燃烧爆炸特性的影响。结果表明，点火初期约束钢筒内发射药燃烧反应不完全，反应剧烈程度较弱；随着距点火端距离增大，发射药燃烧反应剧烈程度变强，但此时反应仍不完全；在约束钢筒末端发射药反应完全。在4.0、5.0和8.0 kJ点火能量下，发射药点火初期到反应剧烈程度迅速增强的成长距离分别为54.66、 53.95和19.38 cm。20.0 kJ能量点火初期发射药反应剧烈程度较强，传播至末端时发射药发生爆燃反应，鉴定板产生明显凹痕；发射药在约束钢筒内不同位置分别发生了缓慢燃烧、快速燃烧和爆燃。