银基带再结晶织构的EBSD分析

本文采用EBSD(电子背散射衍射)等分析手段对{110}<110>取向的银基带的织构形成机理进行了深入研究,发现了冷轧织构与不同退火温度下再结晶织构间的取向转变关系,研究发现,{110}面附近且非{110}<211>取向的冷轧织构组分,900℃退火可以转变为强的{110}<110>织构.织构转变中有孪晶形成,{110}<110>和{110}<114>取向互为孪晶关系.     

自生氧化铝颗粒增强铝基复合材料的扫描电镜和原子力显微镜的对比研究

用扫描电镜（ＳＥＭ）、原子力显微镜（ＡＦＭ）等分析技术研究了一种Ａｌ／Ａｌ２Ｏ３自生颗粒复合材料的微观形貌，结果表明，７００～７５０℃气－液反应生成的氧化铝自生颗粒的典型尺寸为亚微米级，颗粒与基体之间具有热力学稳定性。     

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature.The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method.A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained.The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations,as demonstrated in the electron backscattered diffraction.A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites,as indicated by energy dispersive X-ray spectroscopy.     

银基带再结晶织构的EBSD分析

本文采用EBSD（电子背散射衍射）等分析手段对{110}〈110〉取向的银基带的织构形成机理进行了深入研究，发现了冷轧织构与不同退火温度下再结晶织构间的取向转变关系，研究发现，{110}面附近且非{110}〈211〉取向的冷轧织构组分，900℃退火可以转变为强的{110}〈110〉织构．织构转变中有孪晶形成，{110}〈110〉和{110}〈114〉取向互为孪晶关系．     

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.     

GaAs-GaN键合界面热应力的电子背散射衍射研究

采用扫描电镜(SEM)和电子背散射衍射(EBSD)技术,观察和分析了GaAs和GaN晶片热压键合的界面热应力和晶片键合质量.利用EBSD测量了GaAs-GaN键合界面的菊池花样质量、晶格转动、晶格错配和位错密度等应力敏感参数.结果表明,晶片键合质量良好,键合界面中心区域的热应力小于边缘区域的热应力.GaN层和GaAs层中的应力影响范围,在中心区域分别约为100 nm和300 nm,在边缘区域分别约为100 nm和500nm.EBSD显示的应力分布图与模拟应力场相似.模拟和计算表明,最大剥离应力和剪切应力分布在键合界面的边缘.剥离应力是导致晶片解键合的主要原因.     

Al互连线和Cu互连线的显微结构

利用电子背散射衍射(EBSD)技术，测量了由反应离子刻蚀工艺(RIE)制备的Al互连线和大马士革工艺(Damascene)制备的Cu互连线的显微结构，包括晶粒尺寸、晶体学取向和晶界特征.分析了Cu互连线线宽，及Al和Cu互连线退火工艺对互连线显微结构及电徙动失效的影响.