Development of a Chitosan/Nickel Phthalocyanine Composite Based Conductometric Micro-sensor for Methanol Detection

Thin-film composite of chitosan/nickel phthalocyanine (NiPc) was electrochemically deposited on the fingers of interdigitated gold electrodes, applying chronoamperometric polymerization technique. The presence of crystallized NiPc in the chitosan was confirmed by EDX and FTIR analysis. Acetone, ethanol, and methanol gas-sensing properties of the films prepared at optimum conditions were studied at atmospheric temperature, through differential measurements at an optimized frequency of 10 kHz, using a lock-in amplifier. The conductometric sensor presents the highest sensitivity of 60.2 μS.cm⁻¹(v/v) for methanol and 700 ppm as the limit of detection. For validation, the methanol content of a commercial rubbing alcohol was determined.     

Advances of phononics in 2012—2022

Due to its great potential applications in thermal management, heat control, and quantum information, phononics has gained increasing attentions since the first publication in Rev. Mod. Phys. 84 1045 (2012). Many theoretical and experimental progresses have been achieved in the past decade. In this paper, we first give a critical review of the progress in thermal diodes and transistors, especially in classical regime. Then, we give a brief introduction to the new developing research directions such as topological phononics and quantum phononics. In the third part, we discuss the potential applications. Last but not least, we point out the outlook and challenges ahead.     

气相输运沉积制备c轴择优取向的碘化铋薄膜

铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。     

雾化辅助化学气相沉积法氧化镓薄膜生长研究

采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。     

光纤基底TiNi形状记忆合金薄膜制备工艺

将TiNi基记忆合金薄膜与光纤相结合可制成智能化、集成化且成本经济的微机电系统和微传感器件.本文采用磁控溅射法在二氧化硅光纤基底上制备TiNi记忆合金薄膜,系统讨论了溅射工艺参数以及后续退火处理对薄膜质量的影响.采用自研制光纤镀膜掩膜装置在直径为125μm的光纤圆周表面上形成均匀薄膜.实验表明:在靶基距、背底真空度、Ar气流量和溅射时间一定的条件下,溅射功率存在最佳值;溅射压强较大时,薄膜沉积速率较低,但薄膜表面粗糙度较小.进行退火处理后,薄膜形成较良好的晶体结构,Ti_49.09Ni_50.91薄膜中马氏体B19′相和奥氏体B2相共存,但以B19′为主.根据本文研究结果,在玻璃光纤基底上制备高质量的TiNi基记忆合金薄膜是可实现的,本工作为下一步研制微机电系统和微型传感器做了基础准备.     

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

基于有序介孔碳的氯离子选择性电极的制备及其在手持传感系统中的应用

以有序介孔碳(OMC)球为离子-电子转换层,制备了固态氯离子选择性电极,构建了基于离子敏感的场效应晶体管(ISFET)的手持式传感系统,用于检测人体血清中的氯离子。优化了OMC前驱体的碳化温度,探究了OMC形貌结构对电极传感性能的影响;电极柔性化制备后考察了其在手持系统中对氯离子的检测效果。结果表明,最优条件下,电极在5.12×10^-4~1.02 mol/L的浓度范围呈现线性响应,响应斜率为60 mV/decade。该柔性电极在手持传感系统中展现出高灵敏度和重现性,可用于人体血清样品中氯离子的检测,其回收率为96.3%~104.9%。     

Highly Sensitive AdSV Method for Fe(III) Determination in Presence of Solochrome Violet RS on Renewable Amalgam Film Electrode

The new DP AdSV method for high sensitive Fe(III) determination in the presence of Solochrome Violet RS was developed. The use of an innovative renewable amalgam film electrode Hg(Ag)FE allowed to obtain high sensitivity and significantly minimize the mercury consumption. The best results were obtained for surface area of Hg(Ag)FE equal to 11.8 mm². Instrumental parameters were optimized. The optimal results were obtained using differential pulse technique for the following values: sampling and waiting time ts=tw=10 ms, step potential Es=5 mV, pulse amplitude ΔE=50 mV. Measurements were conducted in 0.05 M acetate buffer (pH 5.6), the concentration of SVRS was equal to 5 μM. Deposition step was carried out at the potential ?400 mV for 20 s. Calculated detection limit for 40 s preconcentration time was equal to 1.4 nM (78 ng L^?1). The influence of the common in environment, organic and inorganic interferences was studied. The developed method for Fe(III) determination was successfully applied and validated by investigation of certified reference material SPS‐SW2 Batch 118 and recovery of Fe(III) from various spiked samples as snow, tap water and bottom sediments. The repeatability (for 50 nM of Fe(III)) of the developed method expressed as CV was equal 3.1 % (n=5).     

Improving the gas barrier,mechanical and thermal properties of poly(vinyl alcohol) with molybdenum disulfide nanosheets

New multifunctional materials with both high structural and gas barrier performances are important for a range of applications. Herein we present a one‐step mechanochemical process to prepare molybdenum disulfide (MoS₂) nanosheets with hydroxy functional groups that can simultaneously improve mechanical strength, thermal conductivity, and gas permittivity of a polymer composite. By homogeneously incorporating these functionalized MoS₂ nanosheets at low loading of less than 1 vol %, a poly(vinyl alcohol) (PVA) polymer exhibits elongation at break of 154%, toughness of 82 MJ/m³, and in‐plane thermal conductivity of 2.31 W/m K. Furthermore, this composite exhibits significant gas barrier performance, reducing the permeability of helium by 95%. Under fire condition, the MoS₂ nanosheets form thermally stable char, thus enhancing the material's resistance to fire. Hydrogen bonding has been identified as the main interaction mechanism between the nanofillers and the polymer matrix. The present results suggest that the PVA composite reinforced with 2D layered nanomaterial offers great potentials in packaging and fire retardant applications. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 406–414     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。