配合参数对单晶炉驱动系统的影响分析

光伏产业的发展使得对硅材料的需求日益增加,同时硅单晶生产行业竞争也日趋激烈。作为生产硅单晶的重要装备,单晶炉的稳定性和可靠性关系到硅单晶生产效率的提升和成本的下降,因此其驱动系统的设计和优化成为装备制造的关键环节。本文以NVT-HG2000-V1型硅单晶生长炉的驱动系统为研究对象,用SolidWorks三维建模实现虚拟装配,采用ADAMS建立其动力学仿真模型,并对驱动系统的运动过程进行仿真模拟。采用控制变量法定量分析了铜套与升降轴的配合间隙及丝杠参数对驱动力和驱动力矩的影响规律,进而在提高硅单晶生长炉装备稳定性和可靠性方面给出合理的技术建议。结果表明,铜套与升降轴的配合间隙达到0.071 mm后能有效降低驱动系统运行所需驱动力矩,丝杠倾斜度、螺纹螺距与螺纹间摩擦系数的增大均会导致驱动系统运行所需力矩大幅增加。     

Photosensitive organic-inorganic hybrid structures based on porous silicon

Abstract

In this study, the photovoltaic organic-inorganic structures were created by deposition of poly(3,4-ethylenedioxythiophene) film doped by poly(styrenesulfonate) and reduced graphene oxide on the porous silicon/silicon substrate. Formation of the hybrid structure was confirmed by means of atomic-force microscopy and Fourier transform infrared spectroscopy. The current-voltage characteristics of the obtained structures were studied. It was found the increase of electrical conductivity and photo-induced signal in organic-inorganic structures. Temporal parameters and spectral characteristics of photoresponse in the 400–1100?nm wavelength range were investigated. The widening of spectral photosensitivity in a short-wavelength range due to light absorption in various layers of the multijunction structure in comparison with single crystal silicon was revealed.     

XPS study of silicon spheres as a density standard

As density is one of the basic physical properties of materials, an accurate density standard is absolutely essential. To determine density with high accuracy and precision, two 1-kg single-crystal silicon spheres (NMIJ-S4 and NMIJ-S5) are used as the primary standard at the National Metrology Institute of Japan. For the accurate measurement of the mass and volume of the silicon spheres, the effects of the surface layer must be carefully considered. In this work, a surface layer model of NMIJ-S4 and NMIJ-S5 was proposed and the thicknesses of each surface layer were determined using X-ray photoelectron spectroscopy. A detailed uncertainty budget is presented to aid use of the density standard.     

First-principles study of electron dynamics with explicit treatment of momentum dispersion on Si nanowires along different directions

ABSTRACT

In this research, ground-state electronic structure and optical properties along with photoinduced electron dynamics of Si nanowires oriented in various directions are reviewed. These nanowires are significant functional units of future nano-electronic devices. All observables are computed for a distribution of wave vectors at ambient temperature. Optical properties are computed under the approximation of momentum conservation. The total absorption is composed of partial contributions from fixed values of momentum. The on-the-fly non-adiabatic couplings obtained along the ab initio molecular dynamics nuclear trajectories are used as parameters for Redfield density matrix equation of motion. The main outcomes of this study are transition energies, light absorption spectra, electron and hole relaxation rates, and electron transport properties. The results of these calculations would contribute to the understanding of the mechanism of electron transfer process on the Si nanowires for optoelectronic applications.     

TFSI钝化晶体硅表面性质的第一性原理研究

晶体硅表面钝化是高效率晶体硅太阳能电池的核心技术,直接影响晶体硅器件的性能。本文采用第一性原理方法研究了一种超强酸-双三氟甲基磺酰亚胺(TFSI)钝化晶体硅(001)表面。研究发现,TFSI的四氧原子结构能够与Si(001)表面Si原子有效成键,吸附能达到-5.124 eV。电子局域函数研究表明,TFSI的O原子与晶体硅表面的Si的成键类型为金属键。由态密度和电荷差分密度分析可知,Si表面原子的电子向TFSI转移,从而有效降低了Si表面的电子复合中心,有利于提高晶体硅的少子寿命。Bader电荷显示,伴随着TFSI钝化晶体硅表面的Si原子,表面Si原子电荷电量减少,而TFSI中的O原子和S原子电荷电量相应增加,进一步证明了TFSI钝化Si表面后的电子转移。该工作为第一性原理方法预测有机强酸钝化晶体硅表面的钝化效果提供了数据支撑。     

Absorption Enhancement of Ultrathin Crystalline Silicon Solar Cells with Dielectric Si_3N_4 Nanostructures

A design of ultrathin crystalline silicon solar cell with Si3 N4 circular truncated cone holes(CTCs) arrays on the top is proposed. In this article, we perform an optical simulation of the structure. The finite-difference time-domain method is used to calculate the optical absorption of different periods, radius of top and bottom circles and depth of Si3 N4 CTCs. The short-circuit current density generated by the optimized cells(30.17 mA/cm~2) is 32.44% more than the value gained by control group(with flat Si3 N4). Then adding a layer of back silver to allow us to better analyze optical absorption. Later, we simulate the optimization of the same configuration of different silicon thicknesses andfind that our structure does enhance the light absorption. This work uses a combined path towards achieving higher photocurrent ultrathin crystalline silicon solar cells by constructing the texture of anti-reflection coating.     

Revisiting the structural and electronic properties of neutral,mono- and di-anionic titanium-doped silicon clusters TiSin0/−/2− (n = 6-16)

The systematic structures search for neutral and Zintl anionic Ti-doped silicon clusters TiSi_n^0/−/2− (n = 6-16) have been carried out using the ABCluster global search technique combined with a double-hybrid density functional method. Based on the predicted energies, adiabatic electron affinities, vertical detachment energies and the consistency between simulated and experimental photoelectron spectroscopy, the true global minimum structures are confirmed. The results show that structural growth pattern of neutral TiSi_n clusters is from linked structures (n = 10-12) to encapsulated configurations (n = 13-16). In contrast, the evolution pattern of Zintl anionic TiSi_n^−/2− clusters begins with the pentagonal bipyramid structure (n = 6). As the Si atoms increase, these Si atoms attach to the surface adjacent to Ti atom, and gradually surround Ti atom. Eventually, the encapsulated structure is formed when n = 12. Moreover, two extra electrons not only perfect the structure of TiSi₁₂ but also improve its chemical and thermodynamic stability.     

Porous MoO3@SiC hallow nanosphere composite as an efficient oxidative desulfurization catalyst

A novel N‐doped MoO ₃ @SiC hollow nanosphere has been synthesized through two steps. Due to the first step, N‐doped MoO₂@C nanosphere was synthesized using the hydrothermal method and in the second step, Si‐C bonds were formed through the low‐temperature magnesiothermic method and MoO ₃ @SiC hollow nanosphere was produced. The prepared nanostructures were identified by various techniques such as IR, XRD, XPS, BET/BJH, SEM/EDS, and Raman spectroscopy. Results show that converting of C to SiC increase the surface area from 17 to 241 m²/g with remarkably decrease in pore diameter. Also, molybdenum is present in the form of MoO₂ in carbon catalyst while during magnesiothermic process, it transfers to MoO₃ form in the SiC catalyst. The synthesized products were employed as catalysts in oxidative desulfurization of model fuel. The results displayed that MoO ₃ @SiC hollow nanostructure shows a superior catalytic activity (99.9%, 40 min) compared to C support (56%, 60 min). Furthermore, the recycling of MoO₂@C catalyst shows a dramatic decrease even after the first run, while, SiC support exhibit higher stability during the stronger interaction between molybdenum catalyst and SiC support.     

Cover Feature: How Many O-Donor Groups in Enterobactin Does It Take to Bind a Metal Cation? (Chem. Eur. J. 28/2019)

The E. coli siderophore enterobactin, the strongest Fe^III chelator known to date, forms hexacoordinate complexes with Si^IV, Ge^IV, and Ti^IV. Synthetic protocols have been developed to prepare non-symmetric enterobactin analogues with varying denticities. Various benzoic acid residues were coupled to the macrocyclic lactone to afford a diverse library of ligands. These enterobactin analogues were bound to Si^IV, Ge^IV, and Ti^IV, and the complexes were investigated through experimental and computational techniques. The binding behavior of the synthesized chelators enabled assessment of the contribution of each of the phenolic hydroxy groups in enterobactin to metal-ion complexation. It was found that at least four O-donors are needed for enterobactin derivatives to act as metal binders. Density functional theory calculations indicate that the strong binding behavior of enterobactin can be ascribed to a diminished translational entropy penalty, a common feature of the chelate effect, coupled with the structural arrangement of the three catechol moieties, which allows the triseryl base to be installed without distorting the preferred local metal-binding geometry of the catecholate ligands.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.