Density Functional Theory Calculations Revealing Metal‐like Band Structures and Work Function Variation for Ultrathin Gallium Arsenide (111) Surface Layers

Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge.     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Tertiary Amines Differentiated from Primary and Secondary Amines by Active Ester‐Functionalized Hexabenzoperylene in Field Effect Transistors

Herein, we report two novel derivatives of hexabenzoperylene (HBP) that are functionalized with ester groups. Methyl acetate functionalized HBP ( 1 ) in single crystals self‐assembles into a supramolecular nanosheet, which has a two‐dimensional π‐stack of HBP sandwiched between two layers of ester groups. With the same self‐assembly motif, active ester‐functionalized HBP ( 2 ) in field effect transistors has enabled differentiation of tertiary amines from primary and secondary amines, in agreement with the fact that active ester reacts with primary and secondary amines but not with tertiary amines to form amides.     

Ba3V2S4O3: A Mott Insulating Frustrated Quasi‐One‐Dimensional S=1 Magnet

Through a solid‐state reaction, a practically phase pure powder of Ba₃V₂S₄O₃ was obtained. The crystal structure was confirmed by X‐ray single‐crystal and synchrotron X‐ray powder diffraction (P6₃, a=10.1620(2), c=5.93212(1) Å). X‐ray absorption spectroscopy, in conjunction with multiplet calculations, clearly describes the vanadium in charge‐disproportionated V^IIIS₆ and V^VSO₃ coordinations. The compound is shown to be a strongly correlated Mott insulator, which contradicts previous predictions. Magnetic and specific heat measurements suggest dominant antiferromagnetic spin interactions concomitant with a weak residual ferromagnetic component, and that intrinsic geometric frustration prevents long‐range order from evolving.     

Molecular Acceptors Based on a Triarylborane Core Unit for Organic Solar Cells

Triarylboranes that exhibit p–π* conjugation serve as versatile building blocks to design n-type organic/polymer semiconductors. A series of new molecular acceptors based on triarylborane is reported here. These molecules are designed with a boron atom that bears a bulky 2,4,6-tri-tert-butylphenyl (Mes*) substituent at the core and strong electron-withdrawing 2-(3-oxo-2,3-dihydroinden-1-ylidene)malononitrile (IC) units as the end-capping groups that are linked to the core by bithiophene bridges. Butyl or butoxy groups are introduced to the bithiophene units to tune the optoelectronic properties. These molecules show nearly planar backbones with highly localized steric hindrance at the core, low LUMO/HOMO energy levels, and broad absorption bands spanning the visible region, which are all very desirable characteristics for use as electron acceptors in organic solar cell (OSC) applications. The attachment of butyl groups to the bithiophene bridges brings about a slightly twisted backbone, which in turn promotes good solubility and homogeneous donor/acceptor blend morphology, whereas the introduction of butoxy groups leads to improved planarity, favorable stacking in the film state, and a greatly reduced band gap. OSC devices based on these molecules exhibit encouraging photovoltaic performances with power conversion efficiencies reaching up to 4.07 %. These results further substantiate the strong potential of triarylboranes as the core unit of small molecule acceptors for OSC applications.     

Two Rare-Earth Molecular Ferroelectrics with High Curie Temperatures,Large Spontaneous Polarization,Switchable Second Harmonic Generation Effects,and Strong Photoluminescence

Smart multifunctional molecular ferroelectrics bearing high Curie temperatures and diverse excellent physical properties, such as second harmonic generation (SHG) responses, luminescence, and semiconductivity, among others, have significant applications but have seldom been documented. Herein, the rare-earth metals Nd and Pr are introduced into a simple molecular system (nBu₄N )₃[M(NO₃)_x(SCN)_y] (nBu₄N₌tetrabutyl ammonium, M=rare-earth metal, nBu=CH₃CH₂CH₂CH₂), and two new multifunctional molecular ferroelectrics are obtained: (nBu₄N )₃[Nd(NO₃)₄(SCN)₂] ( 1 ) and (nBu₄N )₃[Pr(NO₃)₄(SCN)₂] ( 2 ). Their distinct heat and dielectric anomaly dependence on temperature verifies that compounds 1 and 2 experience high-temperature para-ferroelectric phase transitions at 408 and 413 K, respectively. Strikingly, both molecular ferroelectrics possess large spontaneous polarization with P_s values of 9.05 and 8.50 μC cm⁻², respectively, and are further characterized by the appearance of multiple intersecting non-180° domains and polarization switching behavior. In particular, compounds 1 and 2 show good stability with only a small decrease in SHG intensity after switching cycles, suggesting that they have great potential for application in nonlinear optical (NLO) switches. Simultaneously, the rare-earth compounds 1 and 2 present bright yellow–red and bright green fluorescence, respectively, at room temperature.     

Supramolecular Assemblies for Electronic Materials

This work presents a synergy between organic electronics and supramolecular chemistry, in which a host–guest complex is designed to function as an efficacious electronic material. Specifically, the noncovalent recognition of a fullerene, phenyl-C₆₁-butyric acid methyl ester ( PC₆₁BM ), by an alternating perylene diimide ( P )-bithiophene ( B ) conjugated macrocycle ( PBPB ) results in a greater than five-fold enhancement in electron mobility, relative to the macrocycle alone. Characterization and quantification of the binding of fullerenes by host PBPB is provided alongside evidence for intermolecular electronic communication within the host–guest complexes.     

A Semiconducting Organic–Inorganic Hybrid Perovskite‐type Non‐ferroelectric Piezoelectric with Excellent Piezoelectricity

Piezoelectric materials are a class of important functional materials applied in high‐voltage sources, sensors, vibration reducers, actuators, motors, and so on. Herein, [(CH₃)₃S]₃[Bi₂Br₉]( 1 ) is a brilliant semiconducting organic–inorganic hybrid perovskite‐type non‐ferroelectric piezoelectric with excellent piezoelectricity. Strikingly, the value of the piezoelectric coefficient d₃₃ is estimated as ≈18 pC N^?1. Such a large piezoelectric coefficient in non‐ferroelectric piezoelectric has been scarcely reported and is comparable with those of typically one‐composition non‐ferroelectric piezoelectrics such as ZnO (3pC N^?1) and much greater than those of most known typical materials. In addition, 1 exhibits semiconducting behavior with an optical band gap of ≈2.58 eV that is lower than the reported value of 3.37 eV for ZnO. This discovery opens a new avenue to exploit molecular non‐ferroelectric piezoelectric and should stimulate further exploration of non‐ferroelectric piezoelectric due to their high stability and low loss characteristics.