A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

Thermoanalytical procedures to identify the morphology of polycrystalline materials

Polypropylenes of differing morphologies were examined by differential thermal analysis. The problems of reordering during the programmed heating are discussed. Four potential procedures by which the reordering could be inhibited are considered, and three of these are experimentally assessed. Their advantages and deficiencies are identified. Two pretreatments, an etching and a crosslinking, are recognised as able to qualitatively characterise the initial morphology, with a preference for the former. A test to identify the occurrence of reordering is identified. In celebration of the 60^th birthday of Dr. Andrew K. Galwey     

SA耐火材料多晶结构与性能的研究

本实验采用磨具废砂和炉皮SiC废砂生产SA耐火材料，通过XRD分析和计算机处理确定各试样中的晶相（4H－SiC，33R－SiC，3C－SiC，α－Al2O3，β-石英和Al6Si2O13）及其各相的含量。通过材料性能与结构综合分析，确定较好的配方，其含量：磨具废砂50％，炉皮砂45％，结合剂5％，外加矿化剂2％。     

Preparation of Polycrystalline Antimonic Acid Films by Electrophoretic Deposition

Cubic antimonic acid (Sb₂O₅·nH₂O) films were successfully prepared on stainless steel and Si(100) substrates by electrophoretic deposition (EPD) using two types of sols. The sols were prepared by reacting an H₂O₂ aqueous solution with Sb(O-i-C₃H₇)₃ or metallic Sb powder. The resulting films were found to consist of fine particles of cubic Sb₂O₅·nH₂O single crystals with uniform particle sizes of 30 nm and 150 nm. The weight of the Sb₂O₅·nH₂O deposit on the anode Si(100) substrate by EPD increased linearly with the current density in the range of 0–0.67 mA cm^–2, when the sol pH was over 7. The proton conductivity of the polycrystalline Sb₂O₅·nH₂O discs, formed from the two types of sols, was evaluated by an ac impedance method at room temperature under controlled levels of relative humidity.     

Multi-scale homogenization-based modeling of semi-crystalline polymers

This paper presents a finite-strain, multi-scale constitutive model for semi-crystalline polymers, accounting explicitly for the current state and evolution of the underlying crystallographic, lamellar and morphological texture. Specifically, a semi-crystalline polymer is modeled as a two-scale composite, assumed to be, at the larger length scale, an aggregate of randomly distributed grains that, at the smaller length scale, are made up of alternating layers of an amorphous and a crystalline phase. The model incorporates finite elasticity for the amorphous phase and crystallographic hardening for the crystalline phase. The instantaneous effective response of this composite is determined by means of multi-scale homogenization methods, consisting in the use of a “linear comparison composite” (LCC) with the same internal structure as the actual nonlinear composite, with local properties that are optimally chosen via suitably designed variational principles. The effective properties of the resulting two-scale LCC are obtained through a “sequential” homogenization procedure, involving the exact solution for the effective behavior of the lamellar grains and a self-consistent estimate for the aggregate. The latter results are also used to establish evolution laws for the appropriate internal variables in the material. The predictions of the model for the macroscopic response and texture evolution in high-density polyethylene are confronted with available experimental results and compared with those of earlier models.     

Effects of initial crystal size of diamond powder on surface residual stress and morphology in polycrystalline diamond (PCD) layer

Polycrystalline diamond compacts (PDC) were synthesized using diamond powder of average crystal size 3-20 μm by the Ni 70 Mn 25 Co 5 alloy infiltration technique at high temperature and high pressure (HPHT).The surface residual stress of polycrystalline diamond (PCD) layer was measured using micro-Raman spectroscopy with hydrostatic stress model and X-ray diffraction (XRD).Measurements of the stress levels of PCDs show that the residual compressive stresses range from 0.12 to 0.22 GPa,which increase with th...     

A multiscale gradient-dependent plasticity model for size effects

The mechanical behaviour of polycrystalline material is closely correlated to grain size. In this study, we investigate the size-dependent phenomenon in multi-phase steels using a continuum dislocation dynamic model coupled with viscoplastic self-consistent model. We developed a dislocation-based strain gradient plasticity model and a stress gradient plasticity model, as well as a combined model, resulting in a theory that can predict size effect over a wide range of length scales. Results show that strain gradient plasticity and stress gradient plasticity are complementary rather than competing theories. The stress gradient model is dominant at the initial strain stage, and is much more effective for predicting yield strength than the strain gradient model. For larger deformations, the strain gradient model is dominant and more effective for predicting size-dependent hardening. The numerical results are compared with experimental data and it is found that they have the same trend for the yield stress. Furthermore, the effect of dislocation density at different strain stages is investigated, and the findings show that the Hall–Petch relation holds for the initial strain stage and breaks down for higher strain levels. Finally, a power law to describe the size effect and the transition zone between the strain gradient and stress gradient dominated regions is developed.     

The influence of boron concentrations on structural properties in disorder silicon films

In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (μc-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike μc-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In μc-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in μc-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both μc-Si:H and poly-Si films leads to a change in hydrogen bonding configuration.     

ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。     

Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.