A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

Thermoanalytical procedures to identify the morphology of polycrystalline materials

Polypropylenes of differing morphologies were examined by differential thermal analysis. The problems of reordering during the programmed heating are discussed. Four potential procedures by which the reordering could be inhibited are considered, and three of these are experimentally assessed. Their advantages and deficiencies are identified. Two pretreatments, an etching and a crosslinking, are recognised as able to qualitatively characterise the initial morphology, with a preference for the former. A test to identify the occurrence of reordering is identified. In celebration of the 60^th birthday of Dr. Andrew K. Galwey     

Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu₂O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu₂O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu₂O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.     

SA耐火材料多晶结构与性能的研究

本实验采用磨具废砂和炉皮SiC废砂生产SA耐火材料，通过XRD分析和计算机处理确定各试样中的晶相（4H－SiC，33R－SiC，3C－SiC，α－Al2O3，β-石英和Al6Si2O13）及其各相的含量。通过材料性能与结构综合分析，确定较好的配方，其含量：磨具废砂50％，炉皮砂45％，结合剂5％，外加矿化剂2％。     

Synthesis, Structure and Optical Properties of Cerium(Ⅲ) Triphosphate CeP3O9

The single crystal and crystallized powder of triphosphate CeP3O9 have been synthesized, and the space group of CeP3O9 has been determined to be C2221 with the cell parameters ofa = 8.6059, b = 11.2437, c = 7.3518 (A), V= 711.4(3) (A)3, Z= 4, Dc = 3.520 g/cm3, F(000) = 700,R = 0.0377 and wR = 0.0930. The absorption and emission spectra have been measured, for which the strongest absorption and emission peaks are located at 280 and 320 nm, respectively. The density of state (DOS) and dielectric function have been calculated by the DFT method. The crystal is transparent provided the wavelength is larger than 341 nm, and the observed ultraviolet cut-off edge is at about 350 nm for a polycrystalline power sample. It is possible that the triphosphate CeP3O9 will become an ultraviolet emission material.     

Preparation of Polycrystalline Antimonic Acid Films by Electrophoretic Deposition

Cubic antimonic acid (Sb₂O₅·nH₂O) films were successfully prepared on stainless steel and Si(100) substrates by electrophoretic deposition (EPD) using two types of sols. The sols were prepared by reacting an H₂O₂ aqueous solution with Sb(O-i-C₃H₇)₃ or metallic Sb powder. The resulting films were found to consist of fine particles of cubic Sb₂O₅·nH₂O single crystals with uniform particle sizes of 30 nm and 150 nm. The weight of the Sb₂O₅·nH₂O deposit on the anode Si(100) substrate by EPD increased linearly with the current density in the range of 0–0.67 mA cm^–2, when the sol pH was over 7. The proton conductivity of the polycrystalline Sb₂O₅·nH₂O discs, formed from the two types of sols, was evaluated by an ac impedance method at room temperature under controlled levels of relative humidity.     

多晶Hg0.09Cd0.91Te薄膜的光电化学行为

富镉Hg_(1-x)Cd_xTe是一种新型的光电转换材料,已用于固体结太阳能光伏电池:ITO/CdS/Hg_(1-)Cd_xTe/Au。我们曾对Hg_(1-x)Cd_xTe的电沉积机理作过研究。最近我们用电沉积制备的Hg_(0.09)Cd_(0.91)Te多晶薄膜做成了液体结太阳能光电化学电池并观察到明显光电响应。     

Specific features of interaction between formic acid and oxygen adsorbed on smooth polycrystalline platinum: Transients of the open-circuit potential

Transients of the open-circuit potential, which are observed when formic acid is interacting wit adsorbed oxygen (O_ads) preliminarily accumulated on polycrystalline “smooth” platinum (pcPt), are measure in an aqueous solution of sulfuric acid. It is shown that, as with platinized platinum (Pt/Pt), at large coverage by adsorbed oxygen (θ_O = 1?0.8), adsorbed oxygen interacts directly with molecules of formic acid from solution. In the region of medium coverages (θ_O = 0.8?0.2), on the other hand, a mechanism of “conjugated reactions” is realized. It is established that, in the case of pcPt, the direct interaction of O_ads with molecules of HCOOH from solution proceeds slower by nearly three times and the interaction via the mechanism of “conjugated reactions,” faster by about three times, as compared with Pt/Pt.