铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

Extending the response spectrum of organic photodetectors by quaternary active layer method with complementary absorption spectra

In this work, we report a new method for extending the response spectra of organic photodetectors (OPDs) by incorporating PBDT-TT-C and PBDT-TT-F in the P3HT:PC₆₁BM. The effects of PBDT-TT-C and PBDT-TT-F incorporation on the optical and electrical properties of OPDs were investigated, It was found that when the mass ratio of P3HT:PBDT-TT-F:PBDT-TT-C:PC₆₁BM was 12:2:2:8, the response spectrum of the active layer was extended to 780 nm. The responsivity (R) and external quantum efficiency (EQE) of the OPDs reached 340, 376, 315 mA/W and 67%, 88%, 85% under 630, 530, and 460 nm illumination and −1 V bias, respectively, and the detectivity (D*) reached 10¹² Jones. The results show that the inclusion of an appropriate amount of donor material with similar chemical structure and complementary absorption spectrum can reduce the influence of the doping material on the micro-morphology of the original film while improving the absorption of the spectrum. The interaction between the donor materials promotes the generation of photogenerated carriers and increases the photocurrent of the OPDs. In addition, the incorporation of the different component promotes crystallization of the film, resulting in a reduction in dark current of the OPDs.     

Biohybrid Organic Heterostructure Based on Chlorophyll-Bacteriochlorophyll Aggregates for Ecofriendly Hydrogen Production

Hydrogen energy is an abundant, clean, sustainable and environmentally friendly renewable energy source. Therefore, the production of hydrogen by photocatalytically splitting water on semiconductors has been considered in recent years as a promising and sustainable strategy for converting solar energy into chemical energy to replace conventional energy sources and to solve the growing problem of environmental pollution and the global energy crisis. However, highly efficient solar-driven photocatalytic hydrogen production remains a huge challenge due to the poor visible light response of available photocatalytic materials and the low efficiency of separation and transfer of photogenerated electron-hole pairs. In the present work, organic heterojunction structures based on bacteriochlorophyll (BChl) and chlorophyll (Chl) molecules were introduced and used for solar-driven photocatalytic hydrogen production from water under visible light. Also, noble metal-free photocatalyst was successfully constructed on Ti₃C₂T_x nanosheets by simple successive deposition of Chl and BChl, which was used for the photocatalytic splitting water to hydrogen evolution reaction (HER). The results show that the optimal BChl@Chl@Ti₃C₂T_x composite has a high HER performance with 114 μmol/h/g_cat, which is much higher than the BChl@Ti₃C₂T_x and Chl@Ti₃C₂T_x composites.     

PbSe/TiO2同轴异质结纳米管的制备及光催化性能

通过溶液法合成了PbSe/TiO2复合纳米管,并对其进行了微观形貌、晶体结构等的表征。结果表明,制得的样品是由PbSe和TiO2两种材料构成的复合材料,致密、均匀的TiO2薄膜包覆在PbSe纳米管表面。以氙灯为模拟光源,通过对甲基橙的降解研究了PbSe/TiO2复合纳米管的光催化性能。结果显示,PbSe与TiO2之间形成的异质结使PbSe/TiO2复合纳米管具有较高的光催化性能,比纯PbSe纳米管的催化降解率提高了约4.5倍。另外,对PbSe/TiO2复合纳米管光催化稳定性也进行了研究。     

基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器，该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性，这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明，这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且，该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后，近红外光电探测器的光电特性几乎没有下降，这归因于PdSe₂的良好稳定性. 最后，基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.     

单层n型MoS2/p型c-Si异质结太阳电池数值模拟

单层二硫化钼(MoS₂)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS₂/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS₂的电子亲和能为3.75 eV、掺杂浓度为10¹⁸ cm^-3,p型c-Si的掺杂浓度为10¹⁷ cm^-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS₂/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过10¹¹ cm^-2·eV^-1时会严重影响太阳电池的光伏性能。     

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

This review is mainly focused on the optoelectronic properties of diamond-based one-dimensional-metal-oxide heterojunction. First, we briefly introduce the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the features of the p-type boron-doped diamond (BDD) film; then, we discuss the use of three oxide types (ZnO, TiO₂ and WO₃) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behavior and negative differential resistance behavior, especially at higher temperatures. Finally, we discuss the challenges and future trends in this research area. The discussed results of about 10 years’ research on high-performance diamond-based heterojunctions will contribute to the further development of photoelectric nano-devices for high-temperature and high-power applications.     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。     

Skyrmion transport driven by pure voltage generated strain gradient

The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport.     

Z-机制g-C3N4/Bi/BiOBr异质结光催化剂制备及其可见光降解甲醛气体研究

通过将BiOBr纳米片与g-C₃N₄复合,然后原位还原,合成了具有纳米花状结构的三元异质结光催化剂g-C₃N₄/Bi/BiOBr.对g-C₃N₄/Bi/BiOBr的结构、形貌、元素价态和光学性能等进行了表征和研究.评估了g-C₃N₄/Bi/BiOBr对气体甲醛的光催化降解活性. g-C₃N₄/Bi/BiOBr在可见光照射下降解甲醛的活性与g-C₃N₄、 BiOBr单体和g-C₃N₄/BiOBr二元复合物相比显著提高. 20%-g-C₃N₄/Bi/BiOBr复合物可以在60 min内(λ> 400 nm)降解80%的气态甲醛(初始浓度0.16 mg·L^-1).