近紫外激发Gd2ZnTiO6∶Eu3+,Li+红色荧光粉的制备及荧光性能

采用溶胶-凝胶法成功制备出系列Eu³⁺掺杂和Li⁺、Eu³⁺共掺杂Gd₂ZnTiO₆红色荧光粉,并研究Li⁺、Eu³⁺掺杂对样品的晶体结构、微观形貌及发光性能的影响。结果显示,所制备的Gd₂ZnTiO₆∶Eu³⁺,Li⁺(GZT∶Eu³⁺,Li⁺) 荧光粉为双钙钛矿结构,属于单斜晶系(空间群:P2₁/n),大小为10 μm的无规则形状的颗粒。在395 nm近紫外光的激发下,GZT∶Eu³⁺的发射光谱展示出典型的Eu³⁺线状特征光谱,发射峰中心位于615 nm处,归属于Eu³⁺的⁵D₀→⁷F₂跃迁。Eu³⁺的最佳掺杂浓度为0.07(摩尔分数),样品显示明显的浓度猝灭效应,其机制为电偶极子-电偶极子(d-d)相互作用。此外,研究还发现,Li⁺掺杂对样品的晶体结构、微观形貌没有影响,但是一定量的Li⁺掺杂可以显著增强样品的荧光强度。当Li⁺浓度为0.05时,荧光粉发射主峰强度增强程度最大,提高至原来的4.3倍,说明通过Li⁺、Eu³⁺共掺杂可以获得高亮度的GZT红色荧光粉。GZT∶0.14Eu³⁺,0.05Li⁺荧光粉的CIE色坐标为(0.631 1,0.375 3)与标准红光色坐标(0.670,0.330)较为接近,是一种潜在的LED用红色荧光粉。     

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this study, we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i.e., aluminum (Al), through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~0.13 eV. As a result, the ionization rate of Al with Ti co-doping is up to ~5 times larger than that without co-doping at room temperature when the doping concentration is up to 10¹⁸ cm^-3. This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4H-SiC.     

Y3+/Li+和Y3+/Na+双掺杂氟化钡快响应闪烁晶体

氟化钡(BaF₂)晶体是已知响应最快的闪烁晶体,在高能物理、核物理及核医学等领域有着广泛的应用前景。抑制BaF₂晶体的慢发光成分对其工程应用至关重要。本文利用坩埚下降法制备了高Y³⁺掺杂浓度5%、8%、10%(摩尔分数)的BaF₂晶体,并采用Y³⁺与碱金属离子(Li⁺、Na⁺)共掺杂的方法形成电荷补偿阻止间隙F^-的产生,制备了双掺杂型BaF₂快响应闪烁晶体,进而基于优化的5 ns和2 500 ns时间门宽测试方法,研究了Y³⁺掺杂浓度以及Y³⁺与碱金属离子(Li⁺、Na⁺)共掺杂浓度对BaF₂闪烁晶体快/慢成分比的影响规律。结果表明,生长的高浓度Y³⁺掺杂BaF₂晶体的光学质量优异,在220 nm和300 nm处透过率分别高于90%和92%;随着Y³⁺掺杂浓度由0提高至10%,BaF₂晶体的慢发光成分显著降低,快/慢成分比由0.15提高至1.21;生长的Y³⁺/Li⁺及Y³⁺/Na⁺共掺杂BaF₂晶体的慢发光成分较Y³⁺掺杂BaF₂晶体进一步降低,快/慢成分比最高分别可达1.63和1.61。研制的双掺杂BaF₂快响应闪烁晶体有望应用于高能物理、核物理前沿实验等重要领域。     

铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

二价与四价金属离子等摩尔共掺杂的锂离子电池正极材料LiMn1.9Mg0.05Ti0.05O4的制备与表征

以氢氧化锂、乙酸锰、硝酸镁和钛酸丁酯为原料, 以柠檬酸为螯合剂, 采用溶胶-凝胶法制备了二价镁离子与四价钛离子等摩尔共掺杂的尖晶石型锂离子电池正极材料LiMn_1.9Mg_0.05Ti_0.05O₄. 采用热重分析(TGA), X射线衍射(XRD), 扫描电子显微镜(SEM), 透射电子显微镜(TEM)和电化学性能测试(包括循环伏安(CV)和电化学交流阻抗谱(EIS)测试)对所得样品的结构、形貌及电化学性能进行了表征. 结果表明: 780℃下煅烧12 h 得到了颗粒均匀细小的尖晶石型结构的LiMn_1.9Mg_0.05Ti_0.05O₄材料, 该材料具有良好的电化学性能, 在室温下以0.5C倍率充放电, 在4.35-3.30 V电位范围内放电比容量达到126.8 mAh·g^-1, 循环50 次后放电比容量仍为118.5mAh·g^-1, 容量保持率为93.5%. 在55℃高温下循环30次后的放电比容量为111.9 mAh·g^-1, 容量保持率达到91.9%, 远远高于未掺杂的LiMn₂O₄的容量保存率. 二价镁离子与四价钛离子等摩尔共掺杂LiMn₂O₄, 改善了尖晶石锰酸锂的电子导电和离子导电性能, 使其倍率性能和高温性能都得到了明显的提高.     

氮硫共掺杂TiO_2的光电荷分离效应及其光催化性能研究

以硫脲为掺杂剂,采用溶胶-凝胶法制备了氮硫共掺杂TiO2(N,S-TiO2)。用比表面孔隙仪(BET)、X射线衍射仪(XRD)、紫外-可见漫反射(UV-Vis DRS)和X射线光电子能谱(XPS)对制备的光催化剂进行了表征,用表面光电压仪(SPS)和捕获剂研究了光催化剂的光生电荷分离效应。以甲基橙为模拟污染物,在模拟自然光照射下考察了样品的光催化性能。结果表明:硫脲/Ti的摩尔比为30%所制备氮硫共掺杂TiO2具有较高的光催化活性,光催化活性是纯TiO2的5倍。氮硫共掺杂使TiO2具有更高的比表面和光生电荷分离效应,从而有利于提高光催化活性。     

Phosphorus and Halogen Co‐Doped Graphene Materials and their Electrochemistry

Doping of graphene materials with heteroatoms is important as it can change their electronic and electrochemical properties. Here, graphene is co‐doped with n‐type dopants such as phosphorus and halogen (Cl, Br, I). Phosphorus and halogen are introduced through the treatment of graphene oxide with PX₃ gas (PCl₃, PBr₃, and PI₃). Graphene oxides are prepared through chlorate and permanganate routes. Detailed chemical and structural characterization demonstrates that the graphene sheets are covered homogeneously by phosphorus and halogen atoms. It is found that the amount of phosphorus and halogen introduced depends on the graphene oxide preparation method. The electrocatalytic effect of the resulting co‐doped materials is demonstrated for industrially relevant electrochemical reactions such as the hydrogen evolution and oxygen reduction reactions.     

Preparation and Photocatalytic Activity of Ce,H3PW12O40 co-doped TiO2 Hollow Fibers

A series of Ce, H3PW12O40 co-doped TiO2 hollow fibers photocatalysts have been prepared by sol-gel method using ammonium ceric nitrate, H3PW12O40 and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500 ℃ in N2 atmosphere for 2 h. Scanning electron microscopy, X-ray diffraction, nitrogen adsorption-desorption mea- surements, and UV-Vis spectroscopy are employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photo- catalytic performance of the samples has been studied by photodegradation phenol in water under UV and visible light irradiation. The results show that the TiO2 fiber materials have hollow structures, and the co-doped TiO2 hollow fibers exhibit higher photocatalytic activities for the degradation of phenol than un-doped, single-doped TiO2 hollow fibers under UV and visible light. In addition, the recyclability of co-doped TiO2 fibers is also confirmed that the TiO2 fiber retains ca. 90% of its activity after being used four times. It is shown that the co-doped TiO2 fibers can be activated by visible light and may be potentially applied to the treatment of water contaminated by organic pollutants. The synergistic effect of Ce and H3PW12O40 co-doping plays an important role in improving the photocatalytic activity.     

First-principle study on the effect of high Li-2N co-doping on the conductivity of ZnO

Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly Li-2N co-doped supercells of Zn_0.9375Li_0.0625O_0.875N_0.125 and Zn_0.9167Li_0.0833O_0.8333N_0.1667 were constructed, and the geometry optimization for the three models was carried out. The total density of states (TDOS) and the band structures (BS) were also calculated. The calculation results showed that in the range of high doping concentration, when the co-doping concentration is more than a certain value, the conductivity decreased with the increase of co-doping concentration of Li-2N in ZnO, which agrees with the change trend of the experimental results.