Insights into the efficient charge separation over Nb2O5/2D-C3N4 heterostructure for exceptional visible-light driven H2 evolution

Two-dimensional carbon nitride(2 D-C₃ N₄)nanosheets are promising materials in photocatalytic water splitting,but still suffer from easy agglomeration and fast photogene rated electron-hole pairs recombination.To tackle this issue,herein,a hierarchical Nb₂ O₅/2 D-C₃ N₄ heterostructure is precisely constructed and the built-in electric field between Nb₂O₅ and 2 D-C₃ N₄ can provide the driving force to separate/transfer the charge carriers efficiently.Moreover,the strongly Lewis acidic Nb₂O₅ can adsorb TEOA molecules on its surface at locally high concentrations to facilitate the oxidation reaction kinetics under irradiation,resulting in efficient photogene rated electrons-holes separation and exceptional photocatalytic hydrogen evolution.As expected,the champion Nb₂O₅/2 D-C₃N₄ heterostructure achieves an exceptional H2 evolution rate of 31.6 mmol g^-1 h^-1,which is 213.6 times and 4.3 times higher than that of pristine Nb₂O₅ and2 D-C₃N₄,respectively.Moreover,the champion heterostructure possesses a high apparent quantum efficiency(AQE)of 45.08%atλ=405 nm and superior cycling stability.Furthermore,a possible photocatalytic mechanism of the energy band alignment at the hetero-interface is proposed based on the systematical characterizations accompanied by density functional theory(DFT)calculations.This work paves the way for the precise construction of a high-quality heterostructured photocatalyst with efficient charge separation to boost hydrogen production.     

Soliton interactions and asymptotic state analysis in a discrete nonlocal nonlinear self-dual network equation of reverse-space type

We propose a reverse-space nonlocal nonlinear self-dual network equation under special symmetry reduction,which may have potential applications in electric circuits.Nonlocal infinitely many conservation laws are constructed based on its Lax pair.Nonlocal discrete generalized(m,N?m)-fold Darboux transformation is extended and applied to solve this system.As an application of the method,we obtain multi-soliton solutions in zero seed background via the nonlocal discrete N-fold Darboux transformation and rational solutions from nonzero-seed background via the nonlocal discrete generalized(1,N?1)-fold Darboux transformation,respectively.By using the asymptotic and graphic analysis,structures of one-,two-,three-and four-soliton solutions are shown and discussed graphically.We find that single component field in this nonlocal system displays unstable soliton structure whereas the combined potential terms exhibit stable soliton structures.It is shown that the soliton structures are quite different between discrete local and nonlocal systems.Results given in this paper may be helpful for understanding the electrical signals propagation.     

单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

Mn2+、N2-共掺杂Zn2GeO4晶体电子结构和光学性质的研究

采用基于密度泛函理论的平面波超软赝势方法对本征Zn2GeO4，Mn2+掺杂Zn2GeO4，Mn2+/N2-共掺杂Zn2GeO4超晶胞进行了几何结构优化，计算了掺杂前后体系的晶格常数、能带结构、态密度和光学性质。结果表明，Mn离子掺入后，Mn离子3d轨道与O离子2p轨道之间有强烈的轨道杂化效应，掺杂系统不稳定，而Mn/N离子共掺后，Mn离子和N离子之间的吸引作用克服了Mn离子之间的排斥作用，能够明显地提高掺杂浓度和体系的稳定性。光学性质计算结果表明，Mn离子与N离子共掺杂能改善Zn2GeO4电子在低能区的光学跃迁特性，增强电子在可见光区的光学跃迁；吸收谱计算结果显示，Mn离子与N离子掺入后体系对低频电磁波吸收增加。     

DMF体系中Cu2O球晶的制备及形貌分析

以N,N-二甲基甲酰胺(DMF)为溶剂,通过改变铜源和表面活性剂,调控反应参数,溶剂热条件下制备了三维十字形、空心及实心的Cu₂O球晶。利用XRD、SEM等表征手段,分析探讨了工艺条件变化对Cu₂O球晶形貌的影响。研究表明,随着DMF浓度的增大,体系的还原能力增强,Cu⁺增多,溶液的过饱和度增大,Cu₂O晶体集合体形态由晶体结构控制的各向异性与对称性的球晶逐渐向各向同性球晶演变。十二烷基硫酸钠(SDS)、十六烷基三甲基溴化铵(CTAB)、聚乙烯吡咯烷酮(PVP)等表面活性剂有助于降低溶液的过饱和度,增加结晶质的表面扩散能力,有利于规则形态Cu₂O晶粒的形成。反应体系中,Cu(Ac)₂·H₂O水解生成的羧基与DMF中的甲酰基在高温下发生脱羧反应产生CO₂气体以及SDS发泡作用产生的气体是形成空心Cu₂O球晶的重要原因。     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。     

g-C3N4-W18O49复合光催化剂的制备及其光催化机理研究

通过简单的溶剂热法成功制备出了g-C3N4-W18O49复合光催化剂,采用XRD、SEM、TEM以及PL对所得催化剂的物相结构及形貌和光学性能进行了表征,通过降解甲基橙和光解水产氢实验研究所得催化剂的催化性能及其催化机理.由实验可知,W18O49的含量为50;时所得g-C3N4-W18O49复合光催化剂的降解性能最好,其降解率比纯g-C3N4纳米片提高48;;为进一步研究复合光催化剂的电子-空穴传输机理,我们又进行了光解水制氢实验.结果表明:单一的W18O49无产氢活性,它的复合明显降低了g-C3N4的产氢速率,说明复合结构中光生电子是从g-C3N4传递到了W18O49,表现出明显的Ⅱ型异质结复合特征,而不是部分文献所提出的Z型方式.     

β-(N,N-二甲胺基乙氧基)酞菁锌在硅胶表面的固载及其光催化活性

通过4-硝基邻苯二腈分别与对羟基苯甲酸和N,N-二甲基乙醇胺反应制备了4-(4-羧基苯氧基)邻苯二腈(CPPN)和4-(N,N-二甲胺基乙氧基)邻苯二腈(ePN),然后利用开环反应将CPPN键合到聚甲基丙烯酸缩水甘油酯改性的硅胶(PGMA/SiO_2)表面,得到键合有邻苯二腈的硅胶CPPN-PGMA/SiO_2。在"分子碎片" ePN和催化剂1,8-二氮杂双环[5.4.0]十一碳-7-烯(DBU)作用下,通过"同步合成与固载"的方法在PGMA/SiO_2表面固载金属酞菁(β-(N,N-二甲胺基乙氧基)酞菁锌,ePcZn)或无金属酞菁(ePc),从而制备了固载化的酞菁ePcZn-PGMA/SiO_2或ePc-PGMA/SiO_2。通过FT-IR、紫外-可见光谱、TG等对其结构和酞菁键合量进行表征和测定。考察了DBU的用量对"同步合成与固载"酞菁过程的影响。以亚甲基蓝(MB)为目标降解物,研究所制得的固载化酞菁催化剂ePc-PGMA/SiO_2或ePcZn-PGMA/SiO_2的可见光催化活性。结果表明,借助"同步合成与固载"的方法能够成功在PGMA/SiO_2表面固载ePc或ePcZn,得到固载化酞菁光催化剂ePc-PGMA/SiO_2或ePcZn-PGMA/SiO_2,它们均具有较好的可见光催化活性。在可见光照射下,ePcZn-PGMA/SiO_2和ePc-PGMA/SiO_2在较低的质量浓度下凭借吸附-光催化耦合协同作用均能有效降解MB,且随催化剂用量的增大, MB的降解率增大, 0.03g的ePcZnPGMA/SiO_2能使MB的降解率高达92%。催化剂重复使用5次后仍具有较好的光催化稳定性。