氯酸钠氧化法制备超细氧化铁黄的研究

利用氯酸钠氧化硫酸亚铁工艺制备超细氧化铁黄,制备过程中采用低成本的氨水合成氢氧化铁。制备过程包括亚铁盐水溶液的氧化、氢氧化铁胶体的合成和转化以及产物的表面处理。产物是分布在长100～230 nm,宽15～30 nm范围的针状粒子。通过X-射线衍射鉴别晶相,利用X-射线衍射和透射电镜测定产物的粒径,考察了反应温度等多种因素对样品的色相和粒径的影响。     

Kinetics of the Formation of Goethite in the Presence of Sulfates and Chlorides of Monovalent Cations

The synthesis of goethite by oxidation of Fe²⁺in presence of metallic iron was undertaken in an aqueous medium containing indifferent salts such as Na₂SO₄, (NH₄)₂SO₄, NaCl, and NH₄Cl. Temperature and bubbling air rate were maintained, respectively, at 70°C and 1 L/min. The influence of anions and cations on the kinetics of each step of the process has been followed distinctly, the iron dissolution rate has been determined by the variation of the medium acidity, and the precipitation of goethite has been determined by gravimetric measurements. With respect to Cl⁻, the SO₄²⁻anion decreases the rate of the two reactions. NH₄⁺acts as an inhibitor when it is present at low concentrations and as an accelerator for higher concentrations; the limit corresponding to the change of NH₄⁺behavior depends on the nature of the counter ion. The reaction product is composed of pure goethite in the presence of sulfate salts, whereas a mixture of goethite and lepidocrocite, respectively, 60–70 and 40–30%, was observed in the presence of chloride salts.     

Kinetics of thermal dehydroxylation of aluminous goethite

The kinetics of dehydroxylation of synthetic aluminous goethite was studied using isothermal and non-isothermal thermogravimetry. The complete isothermal dehydroxylation can be described by the Johnson-Mehl equation with up to three linear regions in plots of lnln [1/(1–y)]vs. Int Kinetics for the initial stage of dehydroxylation changed from diffusion to first-order through the temperature range 190 to 260°C. The rate of dehydroxylation was reduced by Al-substitution and increased with temperature. Activation energy for dehydroxylation, calculated from the time to achieve a given dehydroxylation extent, varied depending on the extent of dehydroxylation and Al-substitution. Non-stoichiometric OH existed in goethite and some remained in hematite after the complete crystallographic transition.     

铝掺杂针铁矿的制备、表征及吸附氟的特性

水热条件下制备了针铁矿（Goe）和几种铝掺杂针铁矿（Goe-Al_0.1,Goe-Al_0.2和Goe-Al_0.4）,用X射线衍射（XRD）、扫描电镜（SEM）、氮气物理性吸附、酸碱滴定等手段对样品进行了表征,并研究了它们对氟离子的吸附特性。结果表明,随着铝掺杂量的增加,铝掺杂针铁矿的结晶度不断减弱、颗粒的长度不断减小。4种样品的微孔表面积、孔体积和表面分形度都表现为Goe < Goe-Al_0.1 < Goe-Al_0.2 < Goe-Al_0.4,而孔径分布表现为相反的顺序。Goe、Goe-Al_0.1、Goe-Al_0.2和Goe-Al_0.4的电荷零点（PZC）分别为8.2、8.3、8.5和8.7,pH=5.0时它们的表面电荷量分别为0.66、0.83、1.03和1.19 mmol·g^-1。准二级动力学模型适合描述4种样品对氟的吸附动力学过程,表明化学吸附是主要作用机制。一位Langmuir模型可较好的拟合等温吸附数据（R²为0.967~0.981）,二位Langmuir模型对等温吸附数据的拟合度更高（R²为0.982~0.995）,而Freundlich模型的拟合度较低（R²为0.877~0.912）。初始pH=5.0时,Goe、Goe-Al_0.1、Goe-Al_0.2和Goe-Al_0.4对氟的最大吸附容量分别为8.83、10.24、11.72和12.86 mg·g^-1。可见,铝掺杂针铁矿对土水环境中氟的吸附容量高于纯针铁矿。     

Fe–Mn–Al–C Alloys: a Study of Their Corrosion Behaviour in SO2 Environments

The corrosion reaction of four Fe–Mn–Al alloys exposed to a cycling, dry–humid, SO₂ (0.001% by volume) polluted atmosphere was studied. ICEMS, XPS, AES-SAM and transmission Mössbauer spectroscopy at different temperatures were employed to characterize the corrosion products. The analytical results indicate that (i) ferrihydrite is the main component of the rust; (ii) there is an abundant presence of Mn²⁺ and SO₃ ^2–/SO₄ ^2– on the top of the corrosion layer, the concentration of SO₄ ^2– increasing with the number of cycles; and (iii) the magnetic hyperfine pattern exhibited by the series of low-temperature spectra of the rust is quite different from that observed in the rust formed under similar corrosive environments on iron and weathering steel. This latter finding is correlated with a slow rate of transformation of the Fe³⁺ species formed at the early stages of corrosion into -FeOOH, the usual final product of this type of corrosion processes. The sulphate anions, abundant inside the electrolyte during the wet periods, could be incorporated to the ferrihydrite structure being responsible for the Mössbauer spectral pattern recorded from the corrosion products at low temperatures.     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes.     

Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering method under different substrate temperatures. The microstructural, electrical and optical properties of AZO films were investigated in a wide temperature range from room temperature up to 350 °C by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), Hall measurement, and UV–visible meter. The nature of AZO films is polycrystalline thin films with hexagonal wurtzite structure and a preferred orientation along c-axis. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural, electrical and optical properties of the AZO films. The atomic arrangement of AZO film having an wurtzite structure was indeed identified by the HRTEM as well as the Selected Area Electron Diffraction (SAED). The defect density of AZO film was investigated by HRTEM. The film deposited at 100 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.6 × 10⁻⁴ Ω cm. The average transmission of AZO films in the visible range is all over 85%. More importantly, the low-resistance and high-transmittance AZO film was also prepared at a low temperature of 100 °C.     

Re-examination of the Kinetics of the Thermal Dehydroxylation of Goethite

The kinetics of thermal dehydroxylation of aluminuous goethites [1] synthesised from a ferrous salt has been re-examined using the general reaction order kinetic law. The utilised data processing was based on the procedures employed by dissolution kinetics. Recalculation of the activation energies E_A of the dehydroxylation yielded the values 130, 132, 128, and 123 kJ mol⁻¹ for pure goethite, goethite with 10, 20, and 30 mol% Al substitution, respectively. The values of E_A are in a good agreement with those given for goethite in literature. The E_A values are linearly related with the chemically bound excess H₂O/OH⁻ in the crystal lattice that is apparently influenced by Al substitution. This revised version was published online in August 2006 with corrections to the Cover Date.     

Structures, chemical bonding, magnetisms of small Al-doped zirconium clusters

The geometrical and electronic properties of small Al-doped Zrn−1 and host Zrn clusters (n=2-8) are investigated with hybrid HF/DFT functional: B3LYP. For the most favorable configurations of Zrn−1Al clusters, the Al atom prefers to be located on the surface of host zirconium clusters. The isomers that correspond to low coordination number of Zr-Al bonds are found to be more stable. The doping of Al atom in Zrn−1 clusters improves the chemical activities of host clusters. The Zr₅, Zr₇, Zr₄Al and Zr₆Al clusters behave the stronger stabilities relative to their respective neighbors. The strong s-d hybridizations are presented in all bonding Zr atoms. The values of WBI together with AIM analysis suggest that the Zr-Zr interactions are stronger than those between Zr and Al atoms. The doping of Al atom results into the decrease of spin magnetic moments for host zirconium clusters. The moments are mainly derived from the 4d electrons of bonding Zr atoms.