可控化学腐蚀法制备碳化硅量子点及其表面修饰

通过可控的化学腐蚀法完成了对碳化硅量子点的制备,而后经超声空化作用及高速层析裁剪获得水相的碳化硅量子点溶液,利用化学偶联法,一步实现了SiC量子点的表面物化特性调控.通过对制备工艺参数调整前后量子点微观形貌、光谱特性的表征,结果表明:腐蚀次数、腐蚀剂组分及腐蚀剂配比是影响碳化硅量子点光致发光效率的主要因素,调整腐蚀次数与腐蚀剂组分的配比,同时加入偶联剂分析纯硫酸,当以V(HF):V(HNO3):V(H2 SO4)=6:1:1(体积比)的组分及比例腐蚀球磨后的β-SiC粉体时,制备出的水相碳化硅量子点光致发光相对强度最为理想.同时对碳化硅量子点表面巯基的形成机制与修饰稳定性进行了初步分析.     

甲烷浓度对碳化硅基底金刚石薄膜摩擦性能影响

利用热丝化学气相沉积法(HFCVD)在碳化硅基底上制备金刚石薄膜,采用场发射扫描电子显微镜、拉曼光谱仪、原子力显微镜研究了在不同甲烷浓度条件下制备的金刚石薄膜表面形貌及物相组成,在干摩擦条件下通过往复式摩擦磨损实验测试并计算了已制备金刚石薄膜的摩擦系数和磨损率,结合物相分析及摩擦磨损实验结果分析了甲烷浓度的改变对金刚石薄膜摩擦磨损性能的影响。结果表明,由于甲烷气体含量的升高,金刚石薄膜结晶质量下降,薄膜由微米晶向纳米晶转变。摩擦磨损实验结果显示:3%甲烷浓度条件下制备的金刚石薄膜耐磨性较好,磨损率为2.2×10^-7 mm³/mN;5%甲烷浓度条件下制备的金刚石薄膜摩擦系数最低(0.032),磨损率为5.7×10^-7 mm³/mN,制备的金刚石薄膜的耐磨损性能相比于碳化硅基底(磨损率为9.89×10^-5 mm³/mN)提升了两个数量级,显著提高了碳化硅基底的耐磨性。     

微氧化烧结制备掺杂Y2O3的SiC陶瓷及含镉模拟废水处理

采用了微氧化烧结制备了不同Y₂O₃质量分数（0%、2%、4%、6%）的多孔SiC陶瓷，通过对陶瓷的晶体结构、微观形貌、物理性能和Cd²⁺的去除率测试发现：添加了Y₂O₃的SiC陶瓷出现了较多的第二相Y₂SiO₇、Y₅Si₃C_0.5，随着Y₂O₃的质量分数增加逐渐升高，主相的衍射峰的强度有降低。扫描电子显微镜测试发现，SiC陶瓷的尺寸在2.5 μm，Y₂O₃引入后，SiC陶瓷的晶粒尺寸降低，高温烧结时液相的含量增加，熔体粘度降低，晶粒结合更加紧密，Y₂O₃的引入提高了多孔陶瓷的体积密度，Y₂O₃质量分数为6%SiC的体积密度最大为2.21 g/cm³。热导率随着Y₂O₃质量分数的增加呈现出先升高后降低的趋势。金属Cd²⁺的过滤测试表明：随着Y₂O₃质量分数增加，Cd²⁺的残留质量浓度、膜通量和去除率先降低后升高，当掺杂质量分数为4%时，Cd²⁺残留质量浓度最低为0.042 mg/L，膜通量达到了最大值572 L/（m²·h），去除率最大为99.95%，相比未掺质量分数杂体系的去除率提高了0.14%。随着溶液pH值的逐渐增大，金属Cd²⁺的残留质量浓度逐渐降低、去除率逐渐升高，pH≥9时最终均趋于稳定。综合来看，多孔SiC陶瓷的助烧剂Y₂O₃最佳掺量为4%。     

纳米SiC基光催化剂研究进展

Industrialization undoubtedly boosts economic development and improves the standard of living; however, it also leads to some serious problems, including the energy crisis, environmental pollution, and global warming. These problems are associated with or caused by the high carbon dioxide (CO₂) and sulfur dioxide (SO₂) emissions from the burning of fossil fuels such as coal, oil, and gas. Photocatalysis is considered one of the most promising technologies for eliminating these problems because of the possibility of converting CO₂ into hydrocarbon fuels and other valuable chemicals using solar energy, hydrogen (H₂) production from water (H₂O) electrolysis, and degradation of pollutants. Among the various photocatalysts, silicon carbide (SiC) has great potential in the fields of photocatalysis, photoelectrocatalysis, and electrocatalysis because of its good electrical properties and photoelectrochemistry. This review is divided into six sections: introduction, fundamentals of nanostructured SiC, synthesis methods for obtaining nanostructured SiC photocatalysts, strategies for improving the activity of nanostructured SiC photocatalysts, applications of nanostructured SiC photocatalysts, and conclusions and prospects. The fundamentals of nanostructured SiC include its physicochemical characteristics. It possesses a range of unique physical properties, such as extreme hardness, high mechanical stability at high temperatures, a low thermal expansion coefficient, wide bandgap, and superior thermal conductivity. It also possesses exceptional chemical characteristics, such as high oxidation and corrosion resistance. The synthesis methods for obtaining nanostructured SiC have been systematically summarized as follows: Template growth, sol-gel, organic precursor pyrolysis, solvothermal synthesis, arc discharge, carbon thermal reduction, and electrospinning. These synthesis methods require high temperatures, and the reaction mechanism involves SiC formation via the reaction between carbon and silicon oxide. In the section of the review involving the strategies for improving the activity of nanostructured SiC photocatalysts, seven strategies are discussed, viz., element doping, construction of Z-scheme (or S-scheme) systems, supported co-catalysts, visible photosensitization, construction of semiconductor heterojunctions, supported carbon materials, and construction of nanostructures. All of these strategies, except element doping and visible photosensitization, concentrate on enhancing the separation of holes and electrons, while suppressing their recombination, thus improving the photocatalytic performance of the nanostructured SiC photocatalysts. Regarding the element doping and visible photosensitization strategies, element doping can narrow the bandgap of SiC, which generates more holes and electrons to improve photocatalytic activity. On the other hand, the principle of visible photosensitization is that photo-induced electrons move from photosensitizers to the conduction band of SiC to participate in the reaction, thus enhancing the photocatalytic performance. In the section on the applications of nanostructured SiC, photocatalytic H₂ production, pollutant degradation, CO₂ reduction, photoelectrocatalytic, and electrocatalytic applications will be discussed. The mechanism of a photocatalytic reaction requires the SiC photocatalyst to produce photo-induced electrons and holes during irradiation, which participate in the photocatalytic reaction. For example, photo-induced electrons can transform protons into H₂, as well as CO₂ into methane, methanol, or formic acid. Furthermore, photo-induced holes can convert organic waste into H₂O and CO₂. For photoelectrocatalytic and electrocatalytic applications, SiC is used as a catalyst under high temperatures and highly acidic or basic environments because of its remarkable physicochemical characteristics, including low thermal expansion, superior thermal conductivity, and high oxidation and corrosion resistance. The last section of the review will reveal the major obstacles impeding the industrial application of nanostructured SiC photocatalysts, such as insufficient visible absorption, slow reaction kinetics, and hard fabrication, as well as provide some ideas on how to overcome these obstacles.      

碳化硅块状气凝胶的制备及应用

碳化硅气凝胶具有高温稳定性、低热膨胀系数、良好的抗热震性以及抗氧化和耐腐蚀等优异的性质,在高温和高腐蚀性环境下的隔热、电磁吸波、过滤和吸附等领域具有较大的应用潜力。然而,块状碳化硅气凝胶的可控制备一直是一项较大的挑战。本文综述了块状碳化硅气凝胶在制备工艺和应用两个方面的研究进展,首先分析总结了各种制备工艺及其优缺点,包括有机/SiO₂复合气凝胶碳热还原法、预陶瓷化聚合物裂解法、化学气相沉积法、高温气相渗硅法和碳化硅纳米线组装法;然后,详细介绍了碳化硅气凝胶在高温隔热和电磁吸波两个领域的应用研究进展;最后,展望了碳化硅气凝胶未来的若干发展方向。     

陶瓷人工关节的跑合和摩擦性能研究

研究３种生物陶瓷材料（氧化铝，氮化硅和碳化硅）在水中的跑合及其摩擦特性。结果表明：跑合前，氮化硅－氮化硅摩擦副的起始摩擦因数和稳态摩擦因数最高，碳化硅－碳化硅磨擦副的起始摩擦因数和稳态摩擦因数最低，跑合后，氧化铝－氧化铝摩擦副的稳态摩擦因数最高，碳化硅－碳化硅摩擦副的起始摩擦因数和稳态摩擦因数仍然最低。当摩擦副表面均加工到超光洁状态（表面粗糙度Ｒａ为纳米数量级）时，碳化硅－碳化硅摩擦副的摩擦性能最     

SiC晶体生长中气相组分输运特性

针对物理气相传输(PVT)法生长碳化硅(SiC)晶体,建立了一个二维生长动力学模型研究SiC生长腔内气相组分输运特性,该模型考虑了氩气与气相组分之间的流动耦合,Stefan流和浮力影响.研究表明:在压力较低的情况下,自然对流对气相组分的输运过程影响很小,可以忽略,而当压力增高时,自然对流强度显著增大,不可忽略.其次,随着生长温度升高对流的作用增强,生长腔内输运过程由扩散向对流转变,最终对流主导组分的输运过程.随着压力升高对流作用减弱,扩散为气相组分主要输运方式.     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

碳化硅量子点荧光标记技术及其生物学应用

通过一步法完成SiC量子点的合成和表面改性,并对其微观结构、光学性质和理化性质进行了表征,结果表明该量子点半径小于激子波尔半径,导致了量子限制效应现象而产生光致发光,通过对其红外光谱的分析发现碳化硅量子点表面既已耦合了巯基,因此该量子点可以作为量子点标记技术中又一种新型的标记材料,然后用SiC量子水相溶液对有、无根皮苷环境下的串珠镰刀菌进行标记并长时程荧光成像,同时让已成功标记的该菌侵染苹果植株幼苗,试验表明,根皮苷能够促进串珠镰刀菌的生长,主要表现在菌落成长的速度和数量上,进一步研究发现,串珠镰刀菌生长态势随周围环境中根皮苷含量的增加而更趋旺盛,此外串珠镰刀菌对苹果幼苗侵染的动态示踪过程表明幼苗的第一感染部位为根毛区.     

宽禁带碳化硅单晶衬底及器件研究进展

碳化硅作为第三代宽禁带半导体的核心材料之一，相对于传统的硅和砷化镓等半导体材料，具有禁带宽度大、载流子饱和迁移速度高，热导率高、临界击穿、场强高等诸多优异的性质。基于这些优良的特性，碳化硅材料是制备高温电子器件、高频大功率器件的理想材料。近年来在碳化硅材料生长和器件制备方面取得重大进展，对碳化硅材料特性和生长方法进行回顾，并研究了碳化硅光导开关偏压、触发能量、导通电流之间的关系，以及开关失效情况下电极表面的损伤情况。