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Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Gd0.9Zn0.1 Te (GdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission.This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction,respectively.The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1,the CdZnTe:In was almost opaque to the IR emission.Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant.This confirms the existence of the donor level of 0.12 eV. 相似文献
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Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given. 相似文献
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采用物理气相输运法( PVT),以Cr2+∶ ZnSe多晶为原料,在源区温度约为1000℃、温差为6~7℃条件下生长2周,获得了体积约为0.7 cm3的Cr2+∶ZnSe晶体.紫外-可见-近红外透过光谱显示,Cr2+∶ZnSe样品在1770nm左右出现了强吸收;Cr2+浓度在1019 atoms/cm3数量级,与原料中Cr2+浓度基本一致,反映了较低温度PVT法生长有利于获得预期的Cr2+掺杂浓度.荧光测试结果表明,Cr2+∶ZnSe样品谱线对称性好,发射峰位约在2400 nm,线宽约600 nm;室温荧光寿命为5.52×10-6s.数据分析结果表明,Cr2+∶ZnSe样品的吸收截面和发射截面峰值分别为1.1×10-18cm2和2.3×10-18 cm2. 相似文献
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在HgI_2-HI-H_2O溶液体系中,采用静电场诱导技术生长了HgI_2晶体。利用紫外-可见光谱分析了溶液中分子/离子的存在形式;通过改变电场强度和溶液浓度等因素,得到了不同形貌的HgI_2晶体。结果表明,HgI_2-HI-H_2O溶液中存在[HgI_3]~-,[HgI_4]~(2-)和HgI_2等3种主要成分。静电场诱导离子发生定向迁移,形成取向性生长的晶体,晶体形貌受电场诱导和结构因素(分子键力)共同制约。溶质(负离子)向正极迁移,形成颗粒度大的HgI_2晶体;负极主要是由中性HgI_2键合并相变形成的小颗粒HgI_2晶体。分析认为,HgI_2-HI-H_2O溶液中负离子可以成为晶体生长的基本单元。 相似文献
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