排序方式: 共有47条查询结果,搜索用时 15 毫秒
1.
利用传输线技术制备了左手材料,将左手材料与正常材料交替排列组合成平均折射率为零的一维光子晶体.该光子晶体在特定频段具有光子带隙,带隙不随晶格尺度和入射角的变化而改变.通过掺杂技术破坏光子晶体的周期性,可在禁带中引入缺陷模,这种结构的光子晶体可用于实现滤波器小型化和超强耦合.研究表明,通过调节缺陷的厚度可以控制缺陷模的频率,这为调节频率提供了一种方法.实验与仿真结果相符.
关键词:
左手材料
复合左右手传输线
光子晶体 相似文献
2.
3.
4.
5.
6.
The influences of Dzyaloshinskii Moriya (DM) interaction and Kaplan-Shekhtman-Entinwohlman-Aharony (KSEA) interaction on the dimerization of a spin-Peierls system are investigated theoretically by using the Lanczos numerical method. The ground state of the spin-Peierls system is still dimerized phase when both of the DM and the KSEA interactions have the same value with Heisenberg interaction. It is found that the KSEA interaction and uniform DM interaction are always against systemic dimerization, but the staggered DM interaction acts in favour of dimerization. Furthermore, the influences of the DM and the KSEA interactions are also studied in terms of the ground state index rate and the energy gap index rate of the dimerized Heisenberg system. The results show that the DM interaction makes the index rates larger, while the KSEA interaction makes them smaller. 相似文献
7.
8.
对一维掺杂光子晶体嵌入负介电常数材料和负磁导率材料中缺陷模的透射性质进行了研究.利用转移矩阵方法,分别计算了负介电常数材料和负磁导率材料的反射相位谱和一维掺杂光子晶体的透射相位谱.研究发现,在特定条件下,负介电常数材料和负磁导率材料的反射相位以及一维掺杂光子晶体的往返透射相位之和是0或者2π的整数倍.这样的研究结果表明,在满足一定的条件下,一维掺杂的光子晶体嵌入负介电常数材料和负磁导率材料中后,无论杂质的厚度多大,在光子带隙中仅出现一个缺陷模.而且,由于负介电常数材料和负磁导率材料性质的限制,单个缺陷模的品质因子会大大提高. 相似文献
9.
10.