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A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)- polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.  相似文献   
2.
A new phosphorescent material bis(2-phenyl-benzoimiazole) acetylacetonato iridium(PBI)2 IrAcac)is designed and synthesized.The absorption,photoluminescence and electroluminescence are measured.The pllymer-based light-emitting devices which use polyvinylcarbazole(PVK) as host and (PBI)2 IrAcac as emitter were fabricated.These light-emitting devices show a bright green emission at 548nm,The device ITO/(PBI)2IrAcac:PVK/BCP/Alq3/Mg:Ag shows a very high efficiency.A Peak external quantum efficiency of 21.5cd/A(5.8%) was obtained at 0.1mA/cm^2.The maximum brightness is 3840cd/m^2.  相似文献   
3.
Organic Light-Emitting Diodes Driven by Organic Transistors   总被引:3,自引:0,他引:3       下载免费PDF全文
Organic thin-film field-effect transistors (OTFTs) with pentacene as the semiconductor have been fabricated for driving an organic light-emitting diode (OLED). The driving circuit includes two OTFTs and one storage capacitor. The field-effect mobility of the transistors in the driving circuit is more than 0.3cm^2/Vs, and the  相似文献   
4.
We employ the Ta2Os/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.  相似文献   
5.
Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate) as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.  相似文献   
6.
王立铎 《大学化学》2007,22(1):9-13
有机电子学基础理论的研究和有机电子产业的开发是目前国际上备受关注的热点。2000年的诺贝尔化学奖授予了黑格尔、麦克德尔米德、白川英树等人,奖励他们在导电聚合物和有机电子学方面的重大贡献。2000年,美国的Sciense杂志将有机电子学取得的进展列为当年10大科技成果之一。有  相似文献   
7.
Red organic light-emitting diodes (OLEDs) utilizing a novel metal complex with a tridentate ligand, salicylideneo-aminophenolato (8-quinolinoato) aluminium (Al(Saph-q)) as the host material, have been fabricated. In the OLEDs, N,N‘-bis-(l-naphthyl)-N,N‘-diphenyl-1,l‘-biphenyl-4,4‘-diamine (NPB) and 4-(dicyanomethylene)-2-(tbutyl)6-methyl-4H-pyran (DCJTB) are used as the hole-transporting and dopant materials, respectively. Compared with the OLEDs using tris(8-quinolinolato) aluminium (Alq3) as the host material, improved device performance with higher efficiency (0.62 lm/W) has been achieved, in the consideration that developing host materials is a promising way to achieve excellent red emission OLEDs.  相似文献   
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