冶炼厂烟囱降尘农田土壤重金属含量及潜在生态风险评价

摘要：为了研究冶炼厂下风向烟囱降尘对农田土壤重金属污染影响程度,以济源市某一冶炼厂工业烟囱下风向降尘覆盖农田土壤为研究对象,依次对距离该厂烟囱大约为750m-3000m的7个农田研究区（P1-P7）土壤中重金属（Hg、As、Pb、Cd、Cu、Zn、Ni、Cr、）含量进行污染状况分析,采用了单项潜在生态风险指数法和综合潜在生态风险指数法对冶炼厂下风向烟囱降尘土壤中重金属的潜在生态风险进行评价。结果表明：在3 km2研究区域范围内,距离冶炼厂越近土壤重金属含量越高,Pb、Cd为重度污染,超过了《土壤环境质量农用地土壤污染风险管控标准》（GB15618-2018）农用地土壤污染风险管制值的1.2倍,距离冶炼厂烟囱下风向P1区土壤中重金属As、Pb、Cd、Cu、Zn超过土壤环境质量农用地土壤风险筛选值,Cd 在浓度值均超过农用土壤污染风险管制值1.8倍,As元素平均浓度值超农用土壤污染风险管制值1.7倍,Pb、Cu和Zn污染较严重,Cd、Hg对综合指数（RI）贡献值较大分别为68.63和22.4。单项潜在生态风险指数评价结果显示Cd存在极严重的潜在生态风险,Pb、Cu存在较严重潜在生态风险,冶炼厂下风向土壤中综合潜在生态风险指数评价显示,冶炼厂下风向降尘土壤重金属具有较强的生态风险。     

Ti/α-PbO2/β-PbO2电极电化学降解2-氯酚

采用电化学沉积法在Ti基底上制备了复合电极Ti/α-PbO2/β-PbO2,扫描电镜结果表明电极呈现由β-PbO2小晶体组成的菜花状微观形貌.所制电极在电化学降解环境污染物2-氯酚时表现出较高的电催化效率、较好的电极稳定性和较长的电极寿命.用正交实验优化了电化学降解2-氯酚的实验条件.在最优的实验条件(2-氯酚初始浓度50 mg/L,电解质0.1 mol/L Na2SO4,温度35oC,阳极电流密度20 mA/cm2)下电化学降解180 min后,2-氯酚的去除率达100%.动力学结果表明, Ti/α-PbO2/β-PbO2电极上2-氯酚的电化学氧化符合准一级动力学过程.     

A temperature and pH double sensitive cholesteric polymer film from a photopolymerizable chiral hydrogen-bonded assembly

In this study, a novel H-bonded cholesteric polymer film responding to temperature and pH by changing the reflection color was fabricated. The H-bonded cholesteric polymer film was achieved by UV-photopolymerizing a cholesteric liquid crystal (Ch-LC) monomers mixture containing a photopolymerizable chiral H-bonded assembly (PCHA). The cholesteric polymer film based on PCHA can be thermally switched to reflect red color from the initial green/yellow color as temperature is increased, which is due to a change in helical pitch induced by the weakening of H-bonded interaction in the polymer film. Additionally, the selective reflection band (SRB) of the cholesteric polymer film in solution with pH > 7 showed an obvious red shift with increasing pH values. While the SRB of the cholesteric polymer film in solutions with pH = 7 and pH < 7 hardly changed. This pH sensitivity in solutions with pH > 7 could be explained by the breakage of H-bonds in the cholesteric polymer film and the structure changes induced by―OH and―K + ions in the alkaline solution. In contrast, it couldn’t happen in the neutral and acidic solutions. The cholesteric polymer film in this study can be used as optical/photonic papers, optical sensors and LCs displays, etc.     

催化剂的孔道限域效应

限域孔道可以调控催化剂的表面电子分布和几何结构,进而影响催化剂的活性、选择性和稳定性.本文结合理论计算和实验方法,从热力学、动力学、几何效应以及电子转移等角度出发,阐明了不同限域体系中催化剂活性组分和反应分子特性的差异,揭示了限域孔道对反应物种扩散、吸附和反应等过程的影响规律,以期为催化剂的微观结构设计和反应性能调控提供借鉴.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

右(左)拟α-可逆环

给出了右(左)拟α-可逆环的定义,讨论了右(左)拟α-可逆环与线性McCoy环、可逆环、α-刚性环、约化环、阿贝尔环以及弱α-Skew Armendariz环之间的关系.研究了右(左)拟α-可逆环的相关性质和基本扩张.推广了α-可逆环和α-刚性环的相关结论.     

A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.     

WIP-内射环

引入WIP-内射环的概念,给出了WIP-内射环的等价刻画和性质,并研究了其与单J-内射环,P-内射环,IP-内射环之间的关系.     

关于微分熵的一类强偏差定理

利用关于乘积分布密度的相对熵和相对熵率的概念,建立了相依连续型随机变量序列关于参考微分熵的一类强偏差定理,证明中给出了将Laplace变换应用于微分熵强偏差定理的研究的一种途径．