6, 6’-二硫二烟酸构筑的锌配位聚合物的合成、晶体结构和荧光性能

本文以6,6′-二硫二烟酸为主配体,通过水热法合成了新的配合物{[Zn(cpds)(dpa)]·H2O}n(1)(H2cpds=6,6′-dithiodinicotinic acid,dpa=dipyridin-2-ylamine)。用X-射线单晶衍射分析确定了配合物为三斜晶系,P1空间群,其晶体学参数为a=0.846 7(2),b=1.167 4(3),c=1.226 5(3)nm,α=73.605(3)°,β=78.656(3)°,γ=81.484(3)°,V=1.134 7(5)nm3,Dc=1.850 g·cm-3,Z=2。结构分析表明配合物1为一维链状结构,相邻一维链之间堆积形成三维超分子网络结构。本文还研究了配合物的热稳定性和荧光性质。     

SOI纳米线波导导光机理的物理分析

SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一．文章从基本的导波光学理论出发,引入古斯一汉森位移理论,对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果．     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.     

阿维菌素包合物的红外光谱研究

依据β-环糊精的分子空腔容纳性质,利用饱和水溶液法制备出阿维菌素-β-环糊精包合物,利用高效液相色谱法测定其包封率。结合红外光谱谱图说明了阿维菌素-β-环糊精包合物的形成;分析了阿维菌素光解所产生的化学结构变化;研究了所形成的包合物增强阿维菌素化学结构光稳定性的效应。结果表明:阿维菌素-β-环糊精包合物的包封率为40.5%;从红外光谱谱图分析,说明阿维菌素-β-环糊精包合物形成了分子间氢键,组合效应与其物理混合物有区别。阿维菌素B1a分子大环内酯结构可以被光分解破坏,分解后大环内酯结构中的C—O—C结构红外伸缩振动峰消失,内酯键发生明显断裂。形成阿维菌素-β-环糊精包合物后,β-环糊精起包合作用的分子位点覆盖了阿维菌素B1a分子大环内酯结构,为阿维菌素B1a分子大环内酯结构中的C—O—C结构提供良好的避光保护作用,提高了阿维菌素B1a分子的光稳定性。本实验的创新之处在于对所制备的阿维菌素-β-环糊精包合物的结构和特性从红外光谱角度进行了分析,此类包合物可望作为理想的阿维菌素保护型控释制剂中间体。     

A large bandwidth photonic delay line using passive cascaded silicon-on-insulator microring resonators

This paper investigated the design and the characterization of a photonic delay line based on passive cascaded silicon-on-insulator (SOI) microrings.We considered the compromise of group delay,bandwidth and insertion loss.A 3-stage double channel side-coupled integrated spaced sequence of resonator (SCISSOR) device was optimized by shifting the resonance of each microring and fabricated with electron beam lithography and dry etching.The group delay was measured to be 17 ps for non-return-to-zero signals at different bit rates and the bandwidth of 78 GHz was achieved.The experiment result agreed well with our simulation.     

一种基于SU8聚合物的基因测序芯片

基因测序技术极大地推动了生物学和医学研究的发展. 结合了焦磷酸测序 原理及阵列式微反应池芯片的高通量测序仪在从头测序和宏基因组测序方面有着不可替代的作用. 本文首次提出并研制了一种基于SU8聚合物的基因测序芯片. 选择了高传输效率、 低耦合损耗的光纤面板作为基片, 通过改善SU8均匀性及释放应力, 在光纤面板上成功制备出百万数量级阵列式微反应池; 设计并制作侧壁镀膜装置, 实现了SU8阵列式微反应池侧壁选择性光学薄膜蒸镀, 有效地提高了微反应池的光学隔离度, 将相邻微反应池之间的光串扰率平均值从25%降低到了1%, 满足了高通量焦磷酸测序对测序芯片独立并行传输弱光信号的要求. 基于SU8聚合物的基因测序芯片制备工艺简单、成本低廉, 具有良好的应用前景. 关键词： DNA测序 SU8 微反应池 光纤面板     

Sub-nanosecond optical switch based on silicon racetrack resonator

<正>We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon.Using an embedded racetrack resonator with a quality factor of 7400,the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2×10~(-3)mm~2.Moreover,a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively,which are 25%and 44%lower than those without the pre-emphasis.     

Silicon-Based Asymmetric Add-Drop Microring Resonators with Ultra-Large Through-Port Extinctions

We theoretically simulate and experimentally demonstrate ultra-large through-port extinctions in silicon-based asymmetrically-coupled add-drop microring resonators （MRs）. Through-port responses in an add-drop MR are analyzed by simulations and large extinctions are found when the MR is near-critically coupled. Accurate fabrication techniques are applied in producing a series of 20 μm-radii add-drop microrings with drop-side gap-widths in slight differences. A through-port extinction of about 42. 7 dB is measured in an MR with through- and drop-side gap-width to be respectively 280nm and 295nm. The large extinction suggests about a 20.SdB improvement from the symmetrical add-drop MR of the same size and the through-side gap-width. The experimental results are finally compared with the post-fabrication simulations, which show a gap-width tolerance of 〉 30 nm for the through-port extinction enhancement.     

Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator

The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to i dB as the temperature increases from 273K to 343K.