In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses.The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms.The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other.The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface,and shifts positively due to zener trapping in AlGaN barrier layer.As the stress is removed,the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN.However,it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.     

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in DVC-HEMT.The fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d Bm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.     

漆原镍催化剂用于硝基化合物催化加氢

采用锌粉还原氯化镍制备了漆原镍催化剂,并将其用于催化间二硝基苯加氢制间苯二胺和2,5-二氯硝基苯加氢制2,5-二氯苯胺反应.运用X射线衍射、电感耦合等离子体发射光谱和透射电子显微镜等技术对催化剂进行了表征.考察了锌粉、展开剂和制备温度对催化剂活性的影响,以及压力、溶剂等对加氢反应速率的影响,确定了适宜的催化剂制备条件.结果表明,在间二硝基苯和2,5-二氯硝基苯加氢反应中,漆原镍催化剂表现出很高的活性和选择性,在乙醇溶剂中加入适量的水能够大大提高反应速率,适量的脱氯抑制剂能够有效加快2,5-二氯硝基苯加氢速率并提高2,5-二氯苯胺选择性.漆原镍催化剂重复使用5次后其性能基本保持不变.     

1 kHz single-frequency,injection-seeded Er:YAG laser with an optical feedback

A novel 1 kHz single-frequency, Q-switched Er-doped yttrium aluminum garnet(Er:YAG) laser pumped by a 1470 nm laser diode is demonstrated. The 500 ns, 5.52 mJ single-frequency, diffraction-limited pulses are obtained by using a ‘ramp-fire' injection-seeding technique and an optical feedback architecture. The full width at half-maximum of the pulse spectrum is measured to be 1.47 MHz by using the heterodyne technique. The beam quality M2 factors are measured to be 1.18 and 1.24 in the x and y directions, respectively.     

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.     

含有侧孔阵列圆柱管的发声频谱

利用末端导纳匹配方法和格林函数方法,对含有侧孔的律管进行了声学谱分析,得到了均匀侧孔长管在两个音阶上的共振频谱。发现了随有效管长的均匀递减,其发声频率的递增是不均匀的。主要共振效应发生在离吹孔最近的侧孔处,随着共振频率的升高,气流更加集中地在第一侧孔辐射能量,次共振几乎可以忽略。附管上的侧孔对共振频率影响甚微,但是对音色、音强以及各侧孔的透射率都有一定的影响。该理论给出的共振频率与数值模拟结果符合地很好,第一音阶和第二音阶的平均偏差分别为5.03%和2.23%。由此认为末端导纳匹配方法适用于各类含有侧孔的管状发声物声学特性的研究。      

磁场诱导合成一维金属镍线的形貌控制

以镍盐与水合肼为起始原料,采用外加磁场辅助的水热法合成了表面具有纳米级刺状结构的一维金属镍线.向体系中引入十六烷基三甲基溴化铵(CTAB)作为包裹剂,可以合成表面光滑的金属镍线.对比大块镍,金属镍线的矫顽力得到了显著的增强.研究结果表明,外加磁场是线状结构形成的关键,而在镍核表面的CTAB吸附是控制表面形貌的重要因素.以甲基异丁基甲酮加氢制备甲基异丁基甲醇为探针反应,考察了所合成材料的加氢催化性能.结果表明,金属镍材料的一维结构与表面的纳米级刺状结构均有助于提高镍基催化剂的加氢催化活性.