Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Photoluminescence Property of Co3O4 Nanowires

Co3O4 nanowire arrays are fabricated by electrodeposition with following heat-treatment in atmosphere ambient. Photoluminescence is investigated at 295K. In the experiment, when increasing the excitation light wavelength from 260 nm to 360 nm, two kinds of emissions corresponding to the increasing excitation light wavelength are observed. One of them alters the excited emission position, another keeps its emission position. The distinct behaviour of excited emissions related to the increasing excitation wavelength indicates that the mechanism of them must be different. According to the experimental comparison and first-principle calculation, the two kinds of emissions are discussed.     

双离子(40Ar+,C2H6+)辐照合成金刚石纳米晶颗粒

用双离子(40Ar+,C1H6+)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知,多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想.     

铈铝复合载体对钼基催化剂耐硫甲烷化催化性能的研究

采用共沉淀法、浸渍法和沉积沉淀法制备了CeO₂-Al₂O₃复合载体,比较了不同复合载体浸渍钴钼后的耐硫甲烷化催化性能,并优化了复合载体中CeO₂的含量。结合N₂物理吸附、XRD、H₂-TPR等表征手段对复合载体及其负载的钴钼催化剂进行物相和结构分析发现,在Al₂O₃中添加CeO₂可以明显提高合成气的耐硫甲烷化活性,其中,沉积沉淀法制备的25% CeO₂-Al₂O₃复合载体负载钴钼后具有最佳催化活性。     

CuNaY分子筛的制备及其催化甲醇氧化羰基化

采用多种铜盐溶液与NaY分子筛离子交换制备了CuNaY催化剂,通过加入氨水提高溶液pH值以及高温活化,显著提高了该催化剂对甲醇氧化羰基化合成碳酸二甲酯的反应活性。不同的铜盐水溶液交换制备的CuNaY催化剂催化活性不同,添加氨水将溶液pH值调节为11后,离子交换制备的CuNaY催化剂的催化活性和DMC选择性明显升高且趋于一致。经元素分析、XRD、XPS和H₂-TPR表征可知,加入氨水可促进Cu²⁺离子交换的进行,提高CuNaY催化剂中Cu的交换量,催化剂中约75%的Cu²⁺定位于分子筛的超笼中。     

关于数列{2~n}

易知等比数列{2~n}前n项的和为S_n=a_(n+1)-2。对于这个关系式,我们有三点联想。 (一)简便求和。若a_5=32,则S_4=30。 (二)判定由关系式a_(n+1)=rS_n+S给出的数列是否为等比数列。事实上a_(n+1)=rS_n+S (1) a~n=rS_(n-1)+S (2) (1)-(2)得a_(n+1)-a_n=r(s_n-S_(n-1))=ra_n a_(n+1)/a_n=r+ 因此,r≠-1,a_1=S,{a_n}为等比数列。 (三)等比数列前n项和公式的新法推导。     

欢迎有敬业精神的同志自荐为本刊编委

本刊编委产生的方式有三种：自荐、推荐和聘请，自荐是本刊提倡的方式。凡不计报酬、乐意献身于科技期刊出版事业、基本具有副高级以上技术职称的同志,都可以自荐为本刊编委。自荐者可与本刊联络处联系，地址：北京市81信箱66分箱 刘建林，邮政编码：100095。 《光谱实验室》编辑部     

多级孔ZSM-5分子筛的制备及催化噻吩烷基化性能研究

用不同浓度的Na₂CO₃溶液处理ZSM-5分子筛,采用XRD、XRF、SEM、N₂吸附脱附及NH₃-TPD方法对处理前后的ZSM-5分子筛进行表征,并考察了Na₂CO₃溶液处理对ZSM-5分子筛孔结构、酸性以及噻吩烷基化性能的影响。结果表明,Na₂CO₃溶液处理在保持ZSM-5分子筛微孔骨架结构的同时,增加了ZSM-5分子筛的比表面积、外表面积和介孔体积,并调变了酸性。Na₂CO₃溶液处理提高了ZSM-5分子筛催化剂的噻吩烷基化活性和噻吩选择性。一定反应条件下,随着Na₂CO₃溶液浓度增加,多级孔ZSM-5分子筛的噻吩烷基化性能逐渐提高,而噻吩选择性先增加后下降。当Na₂CO₃溶液浓度为2 mol/L时,分子筛的噻吩转化率和噻吩选择性分别为81.26 %和73.15%。当Na₂CO₃溶液浓度为3 mol/L时,噻吩转化率和选择性分别为90.57 %和72.59%。