Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

Silicon nitride (SiN_x) films were prepared with a gas mixture of SiH₄ and NH₃ on Si wafers using the plasma-enhanced chemical vapor deposition (PECVD) method. High-resolution transmission electron microscopy and infrared absorption have been used to reveal the existence of the Si quantum dots (Si QDs) and to determine the chemical composition of the silicon nitride layers. The optical properties of these structures were studied by photoluminescence (PL) spectroscopy and indicate that emission mechanisms are dominated by confined excitons within Si QDs. The peak position of PL could be controlled in the wavelength range from 1.5 to 2.2 eV by adjusting the flow rates of ammonia and silane gases. Absorbance spectra obtained in the transmission mode reveal optical absorption from Si QDs, which is in good correlation with PL properties. These results have implications for future nanomaterial deposition controlling and device applications.     

Defect-effects on the photoluminescence of ZrO2 bulk,film and nanocrystals

The photoluminescence (PL) properties of ZrO₂ have been measured at different temperatures between 7 and 300 K, using various kinds of ZrO₂ specimens: bulk crystal melt-grown by a large solar furnace, thermally oxidized zirconium plate (ZrO₂ film crystal on Zr ) and nanocrystals (surface area: 35–45m²/g, diameter: 20–30 nm). The results clarify the deep and shallow energy level structures in the energy gap. Reversible UV-laser-light-induced spectral changes are observed for all of the specimens in different specimen-atmospheres (vacuum and O₂ gas). The results elucidate the defect-effects of the PL properties and the PL enhancement mechanism in ZrO₂ nanocrystals.     

Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

GaN thin films grown by MOCVD on (0 0 0 1) Al₂O₃ substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.     

Characterization and photoluminescence properties of some MLn2(1−x)O4:2xEu or 2xTb systems (M=Ba or Sr, Ln=Gd or La)

BaGd₂O₄, BaLa₂O₄ and SrLa₂O₄ powders doped with different concentrations of Eu³⁺ or Tb³⁺ are prepared by combustion synthesis method and the samples were further heated to 500, 700 and 900 °C to improve the crystallinity of the materials. The structure and morphology of materials have been examined by X-ray diffraction and scanning electron microscopy. It is remarkable that all the samples of BaGd₂O₄, BaLa₂O₄ and SrLa₂O₄ have similar morphology. The SEM images show homogeneous aggregates of varying shapes and sizes, which are composed of a large number of small elliptical shaped crystallites with an average diameter of about 0.5-3.0 μm. Photoluminescence for all materials increases with increase of temperature and shows a maximum for the samples heated to 900 °C with 4 mole% doping of Eu³⁺ or Tb³⁺ ions. The luminescence is almost same for all powders when doped with same concentration of Eu³⁺.     

Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.     

Optically induced level anticrossing in undoped GaAs/AlGaAs coupled double quantum wells

We report a photoluminescence detected anticrossing of the energy levels in an undoped asymmetric coupled-double-quantum-well buried in a p-i-n structure. Due to the built-in electric field, the quantum wells are tilted in such a way that the symmetric energy level is higher than that of the antisymmetric one in the conduction band. Keeping the laser excitation energy below the barrier, with increasing laser power, the level anticrossing and the quantum confined Stark effect were observed due to decreasing built-in electric field by the photogenerated electron and hole pairs.     

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO₂ system is important.     

Eu3+-site occupation in CaTiO3 perovskite material at low temperature

In order to clarify the site occupancy of rare-earth ions in rare-earth doped perovskite materials, the un-doped pure CaTiO₃ and Eu³⁺-doped CaTiO₃ samples with a series of Ca/Ti ratio were synthesized via high-temperature solid-state reaction method. X-ray diffraction (XRD) powder patterns confirm that the crystal structure keeps invariant at various Ca/Ti ratios. Measurement results of unit-cell parameters and X-ray photoelectron spectroscopy (XPS) indicate that Eu³⁺ ions enter into the Ca²⁺ site. The high-resolution photoluminescence spectra of Eu³⁺ ions at 20 K in all samples did not witness a significant change under the excitation at different wavelength, implying that Eu³⁺ ions occupy only one type of site. Considering the small spectral splitting range of ⁵D₀ → ⁷F₂ transition and the large intensity ratio of ⁵D₀ → ⁷F₂/⁵D₀ → ⁷F₁, it can be concluded that Eu³⁺ occupies Ca²⁺ site with larger coordinate numbers rather than Ti⁴⁺ site.     

Solvo‐thermal Preparation of One Novel Cadmium(II) Coordination Polymer with 1‐(4‐Aminobenzyl)‐1,2,4‐Triazole and Bi‐functional Photo‐Luminescent Sensing for Acetone and Dichromate

In this work a 1,2,4‐triazole derivative 1‐(4‐aminobenzyl)‐1,2,4‐triazole (abtz) was utilized, one new cadmium(II) coordination polymer, namely [Cd(abtz)I₂]_n ( 1 ) was prepared through the powerful solvo‐thermal synthetic strategy. In compound 1 , the abtz building blocks are interlinked through the central Cd^II ions forming the two‐dimensional (2D) layer coordination framework. Powder X‐ray diffraction (PXRD) characterization also reveals that we have prepared the pure phases of coordination polymer 1 . Optical properties have been determined, which can behave the excellent photo‐luminescent emission of coordination polymer 1 . Photo‐luminescent experiment also reveals that coordination polymer 1 can behave the highly sensitive detection for acetone molecules with high K_sv value (K_sv = 4.12 ×10⁴ L · mol^–1) in the recyclable detection fashion. Additionally, coordination polymer 1 also can behave the highly sensitive detection for pollutant dichromate with excellent quenching efficiency K_sv (K_sv = 2.12 × 10⁴ L · mol^–1) and low detection limit [38 × 10^–3 mM (S/N = 3)]. UV/Vis, photo‐luminescent lifetime, and PXRD patterns also have been determined to analyze the detection mechanism.     

Novel Composites of Graphitic‐phase Nitrogen Carbon/Lanthanide Coordination Polymers as White Light‐emitting Phosphor

Lanthanide coordination polymers (Ln‐CPs) are excellent candidates for designing white light materials due to their adjustable fluorescent characteristic by decorating organic ligands, changing metal centers and including guests. However, low quantum yield, weak blue emission, high prices and supply risks have hindered the application and developments of the pure Ln‐CPs materials. Herein, we have designed a new white color composite material capable of white light‐emission upon excitation at 338 nm, which fabricated by compositing a graphitic‐phase nitrogen carbon (g‐C₃N₄) treated with nitric acid and lanthanide‐based complexes, with the photoluminescencequantum yield (QY) in solid state reaching 11.7 %. WLEDs constructed by depositing the (g‐C₃N₄)_0.783/Eu_0.133/Tb_0.083‐dbpt [dbpt = 3‐(3,5‐dicarboxylphenyl)‐5‐(pyrazinyl)‐1H‐1,2,4‐triazole] composites on a commercial UV LED chip feature a CIE chromaticity coordinate at (0.33, 0.33), high color rendering index (CRI) of 94.6. Compared to conventional white light‐emission Ln‐CPs materials of La_0.928Eu_0.045Tb_0.027‐dbpt and La_0.896Eu_0.104‐dbpt reveals that (g‐C₃N₄)_0.783/Eu_0.133/Tb_0.083‐dbpt composites have higher QY and CRI values.