石斛与桑寄生的红外光谱对比分析

用傅里叶变换红外光谱仪测定了石斛与桑寄生的红外光谱,通过比较发现两者光谱较相似,桑寄生与石斛的相似峰个数达到91.7%。主要吸收峰的频率基本一致,反映两样品的主要化学成分相似。利用差谱技术对石斛与桑寄生的光谱进行分析,发现两者的红外光谱差异主要在1800—800cm-1范围,该范围内的差谱反映出两者的差异主要来自黄酮、蛋白质、多糖类化合物的相对含量不同。     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

Sprout Branching of Tumour Capillary Network Growth: Fractal Dimension and Multifractal Structure

A tumour vascular network, characterized as an irregularly stochastic growth, is different from the normal vascular network. We systematieally analyse the dependence of the branching. It is found that anastomosis of tumour on time is according to a number of tumour images, and both the fractal dimensions and multifractal spectra of the tumours are obtained. In the eases studied, the fractal dimensions of the tumour vascular network increase with time and the multifractal spectrum not only rises entirely but also shifts right. In addition, the best drug delivery stage is discussed according to the difference of the singularity exponent δα（δα = αmax - αmin）, which shows some change in the growth process of the tumour vascular network. A common underlying principle is obtained from our analysis along with previous results.     

Self-Injection and Acceleration of Monoenergetic Electron Beams from Laser Wakefield Accelerators in a Highly Relativistic Regime

Self-injection and acceleration of monoenergetic electron beams from laser wakefield accelerators are first investigated in the highly relativistic regime, using 100 TW class, 27 fs laser pulses. Quasi-monoenergetic multi- bunched beams with energies as high as multi-hundredMeV are observed with simultaneous measurements of side-scattering emissions that indicate the formation of self-channelfing and self-injection of electrons into a plasma wake, referred to as a ＇bubble＇. The three-dimensional particle-in-cell simulations confirmed multiple self-injection of electron bunches into the bubble and their beam acceleration with gradient of 1.5 GeV/cm.     

低电荷态离子原子碰撞过程中的转移电离机理的研究

介绍了使用位置灵敏技术和飞行时间方法研究中低能低电荷态离子-原子碰撞过程中转移电离与单电子俘获过程.对于确定的入射离子电荷态,通过理论分析及与实验数据对比给出了转移电离与单电子俘获截面比R_TS随着入射离子速度V_P的变化规律和转移电离过程中电离的电子主要来自靶原子的最外亚壳层. 关键词： 转移电离 逃离半径 电离半径 俘获半径     

拉曼光谱数据库及信息查询系统

随着拉曼光谱议的不断发展,尤其是便携式拉曼光谱仪的普及,与其配套的各种拉曼数据库的建立是十分重要的。目前大多数实验室都依赖进口仪器及其相应的数据库。因此建立我国自己的拉曼数据库具有重要的意义。本文采用目前最先进的数据库软件平台,构建了大型拉曼光谱数据库。本数据库包括宝玉石及其填充物、原生矿物、毒品,农药,打印复印墨迹、化学药剂等数个子数据库,总计有数千条图谱及数据信息。可以通过中文名称、英文名称、化学式、特征峰等多种方式进行查询。系统具有智能化的信息查询模块,并且支持模糊查询。根据最强的三个特征峰值进行搜索,是其区别其他数据库的显著特点。在特征峰搜索模式中,通过依次输入拉曼图谱中的最强特征峰值,经过几次比对和确认可以显示出满足搜索条件的图谱,最终逼近真实结果。操作人员只需经过简单的培训,使用较低硬件配置的计算机,就能够在几秒钟内根据实际测得拉曼图谱,从数据库中查找出与其匹配的信息,从而快速准确的鉴定出其构成与或所属矿物。本数据库在功能上可以不断扩展,包含的数据信息可以不断扩充。该数据库可广泛应用于公安法学,宝玉石真伪,化学分析等各种物相鉴定领域。     

Er:SGB晶体主轴折射率测量

根据Er:Sr3Gd(BO3)3(Er:SGB)的透过率曲线粗略估计了该晶体的折射率,再利用自准直法,精确测量了30~170℃范围内,0.4880μm、0.6328μm、1.0640μm、1.338μm等波长下Er:SGB晶体的主轴折射率,得到Sellm e ier方程并计算了1.319μm下Er:SGB晶体的主轴折射率,与实验测量的结果进行比较,两者的差异不大于2×10-4,处在测量误差的范围内,验证了实验结果的可靠性。     

手性多孔嵌段共聚物薄膜诱导手性金纳米粒子的手性组装

以手性酒石酸(TA)分子诱导嵌段共聚物聚丁二烯-b-聚环氧乙烷(PBd-b-PEO)手性组装,通过除去TA分子形成手性多孔薄膜,并作为模板诱导手性金纳米粒子(Au NPs)手性组装。利用透射电子显微镜(TEM)和圆二色光谱(CD)表征了手性PBd-b-PEO/Au NPs复合薄膜的组装特性。结果表明:当手性Au NPs与孔道结构的手性一致时,更有利于手性Au NPs手性信号的表达。当手性Au NPs沉积量比较少时,复合薄膜只表现出手性Au NPs的手性排列信号;而当Au NPs沉积量大时,复合薄膜表现出手性Au NPs本身和组装体的共同手性信号。     

BN坩埚中的AIN单晶生长

AIN是第三代直接宽带隙半导体材料的代表，具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等特点，在制作大功率微电子器件和紫外探测器等方面，具有广泛的应用前景。AIN在光电子领域的应用潜力也不容忽视。AIN作为GaN材料的衬底，与目前广泛使用的SiC和宝石衬底相比，具有晶格失配位错密度低、热导率高、热膨胀系数差别小等优点，因而能大大提高GaN器件的性能和使用寿命。目前，各国竞相投入大量的人力、物力进行AIN单晶的研究工作。我国在这方面还鲜有报道。本文报道了山东大学在AIN单晶生长探索方面取得的一些进展。