变焦系统凸轮曲线的优化设计

由于变焦系统凸轮曲线的的质量直接影响像质,因此从实际应用出发,以变焦方程和动态光学原理为依据,结合实际工作中需要设计的变焦镜头,通过对变焦系统高斯计算的过程进行分析,指出影响凸轮曲线的主要因素为变倍组和补偿组的焦距以及二者的间隔。针对3个参量之间的对应关系进行讨论,提出了优化凸轮曲线的方法。     

CINRAD/SB雷达伺服系统典型故障分析

介绍金华CINRAD/SB天气雷达天线、伺服系统的组成及基本工作原理,根据金华新一代天气雷达伺服系统出现的故障记录以及报警信息,分析故障原因,确定故障部位,给出解决方案及注意事项,为雷达机务人员在碰到类似问题时快速确定故障位置并解决故障提供参考,共享雷达维护维修经验,提高工作效率,更好地保障新一代天气雷达的正常运行.     

连续相位变化毫米波衍射天线

基于菲涅尔原理及卡塞格伦天线设计方法,设计了一种口面直径为200 mm的卡赛格伦菲涅耳相位修正平面天线。天线采用连续相位修正方式,由一组同心菲涅耳相位修正圆环组成,与传统卡赛格伦抛物面天线相比,该天线具有平面化结构,大大减小了天线自身重量,天线辐射性能较离散相位衍射天线有大幅度提高。在95 GHz频率下,采用物理光学法进行仿真计算,并采用近场扫描系统进行了天线性能测试,天线3 dB波束宽度分别为0.95及1.05,天线实测增益为44.1 dB,天线口面效率为65%。     

基于液相外延的InAs基红外探测器InAsSbP阻挡层的仿真

在传统pn结红外探测器中,宽带隙阻挡层的引入可以有效降低器件暗电流。采用COMSOL软件对探测器的能带图进行仿真,结果表明,InAsSbP四元合金通过n型或p型掺杂,其能带结构能够实现价带能级的下凹或导带能级的上凸,起到阻挡空穴或电子的作用。通过理论分析和仿真计算,确定了满足阻挡层要求的InAsSbP组分。对于nBip型和pBin型红外探测器,仿真得到了阻挡层的最优厚度和最优掺杂浓度(粒子数浓度),并分析了其偏离最优值时对器件暗电流的影响。对于nBip型探测器,当阻挡层厚度为40nm、掺杂浓度为2×10~(18) cm~(-3)时,器件开关比最大;对于pBin型探测器,当阻挡层厚度为60nm、掺杂浓度为4×10~(17) cm~(-3)时,器件的开关比最大。     

Efficient quantum simulation of open quantum dynamics at various Hamiltonians and spectral densities

Simulation of open quantum dynamics for various Hamiltonians and spectral densities are ubiquitous for studying various quantum systems. On a quantum computer, only log₂N qubits are required for the simulation of an N-dimensional quantum system, hence simulation in a quantum computer can greatly reduce the computational complexity compared with classical methods. Recently, a quantum simulation approach was proposed for studying photosynthetic light harvesting [npj Quantum Inf. 4, 52 (2018)]. In this paper, we apply the approach to simulate the open quantum dynamics of various photosynthetic systems. We show that for Drude–Lorentz spectral density, the dimerized geometries with strong couplings within the donor and acceptor clusters respectively exhibit significantly improved efficiency. We also demonstrate that the overall energy transfer can be optimized when the energy gap between the donor and acceptor clusters matches the optimum of the spectral density. The effects of different types of baths, e.g., Ohmic, sub-Ohmic, and super-Ohmic spectral densities are also studied. The present investigations demonstrate that the proposed approach is universal for simulating the exact quantum dynamics of photosynthetic systems.     

Li掺杂少层MoS2的电荷分布及与石墨和氮化硼片的比较

基于第一性原理计算, 研究了Li掺杂的少层(1-3层) MoS₂的电荷分布, 并与石墨片和BN片的电荷分布特征进行了比较. 与石墨片和BN片相同的是: 电荷转移的大部分只发生在Li与最靠近Li的第一层MoS₂之间. 然而, 第二层和第三层MoS₂也能获得10%的转移电荷, 而石墨片和BN片的第二层和第三层得不到2%的电荷. 结合静电能和功函数的分析可知, MoS₂、石墨片和BN片的电荷分布主要由层间的静电相互作用和功函数来决定. 这些研究结果对于揭示具有多层结构的电荷分布特征及其电子器件的设计提供了理论支持.     

流经矩形喷嘴的超音速射流啸叫模式切换的实验研究

通过实验分析比较了对于相同高度不同宽度的四种矩形喷嘴, 当压力在0.2 MPa到0.8 MPa 之间变动时, 欠膨胀超音速自由射流的啸叫特性和对应的流场纹影结构.结果表明: 不同宽高比喷嘴的超音速自由射流辐射噪声中的单频离散啸叫存在两种不同的啸叫模式, 且随着射流压力的变化会出现模式间的切换.所谓模式切换是指不同模式的轮流占优和消失的现象.啸叫模式间的切换及占优区间的宽度随着喷嘴宽高比的减小而缩短.其中, 宽高比为2的射流啸叫模式中的一种模式所占的射流压降区间异常小, 此现象未在相关文献中提及; 喷嘴宽高比为4的射流啸叫占优区间内, 啸叫基频-射流压力曲线在0.49 MPa时出现了间断、跳跃现象.随着压力的降低激波纹影的轴线出现了抖动, 不同宽高比下流场结构的稳定性随压力变化的规律各异.射流压力在0.70 MPa到0.45 MPa区间内, 随着宽高比减小, 第一波节格栅的激波致密度减弱, 且出现轴向脉动, 第二波节后方的流场变得紊乱; 当射流压力低于0.45 MPa 时, 激波串结构随着宽高比的增大而趋于稳定, 在此压力区间内周期性激波格栅结构较射流压力在0.45 MPa以上时有所减弱.结合啸叫频谱及纹影图分析, 可初步认为, 第二、三波节也会对啸叫频率的声压幅值起到反馈增强作用.     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.