全文获取类型
收费全文 | 154篇 |
免费 | 44篇 |
国内免费 | 45篇 |
专业分类
化学 | 100篇 |
晶体学 | 4篇 |
力学 | 10篇 |
综合类 | 2篇 |
数学 | 13篇 |
物理学 | 114篇 |
出版年
2024年 | 1篇 |
2023年 | 7篇 |
2022年 | 10篇 |
2021年 | 4篇 |
2020年 | 8篇 |
2019年 | 9篇 |
2018年 | 15篇 |
2017年 | 4篇 |
2016年 | 7篇 |
2015年 | 12篇 |
2014年 | 13篇 |
2013年 | 5篇 |
2012年 | 17篇 |
2011年 | 15篇 |
2010年 | 15篇 |
2009年 | 17篇 |
2008年 | 10篇 |
2007年 | 8篇 |
2006年 | 10篇 |
2005年 | 11篇 |
2004年 | 9篇 |
2003年 | 4篇 |
2002年 | 3篇 |
2001年 | 3篇 |
2000年 | 2篇 |
1999年 | 3篇 |
1998年 | 1篇 |
1997年 | 3篇 |
1994年 | 2篇 |
1993年 | 1篇 |
1992年 | 3篇 |
1991年 | 1篇 |
1988年 | 1篇 |
1987年 | 1篇 |
1986年 | 2篇 |
1985年 | 3篇 |
1981年 | 2篇 |
1955年 | 1篇 |
排序方式: 共有243条查询结果,搜索用时 677 毫秒
61.
Reflection Asymmetric Relativistic Mean Field Approach and Its Application to the Octupole Deformed Nucleus ^226Ra 下载免费PDF全文
A reflection asymmetric relativistic mean field (RAS-RMF) approach is developed by expanding the equations of motion for both the nucleons and the mesons on the eigenfunctions of the two-centre harmonic-oscillator potential. The efficiency and reliability of the RAS-RMF approach are demonstrated in its application to the well-known octupole deformed nucleus 226Ra and the available data, including the binding energy and the deformation parameters, are well reproduced. 相似文献
62.
63.
快速分离柱高效液相色谱法测定卷烟主流烟气中的主要羰基化合物 总被引:1,自引:0,他引:1
选择2,4-二硝基苯肼(DNPH)为羰基化合物的衍生化试剂,建立了快速分离柱高效液相色谱测定卷烟主流烟气中8种羰基化合物的方法。采用经2,4-二硝基苯肼酸性溶液处理过的剑桥滤片捕集烟气,再用含2%(体积分数)吡啶的乙腈溶液进行萃取,以ZORBAX Stable Bound色谱柱(50 mm×4.6 mm,1.8 μm)进行快速分离,最后由二极管阵列检测器于365 nm下进行检测。该方法的回收率为89.1%~99.2%,相对标准偏差(RSD)在6.0%以下。该方法分析时间短,流动相消耗少,且操作简便、重复性好、回收率高。 相似文献
64.
65.
66.
Supplementary Material: A Dynamic Model of Heavy Ion ~7Li Irradiation Mutagenesis Based on Maize Inbred Line Nutrition Difference 下载免费PDF全文
正Text A:Irradiation mutagenesis Heavy ion ~7Li radiation mutagenesis was performed by the HI-13 tandem accelerator at the China Institute of Atomic Energy.The radiation procedure was configured as previously described,with a 相似文献
67.
Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors 下载免费PDF全文
The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters(such as threshold voltage and sub-threshold swing) are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light wavelength.Subsequently, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism. 相似文献
68.
A design for an efficient monochromatic electron source for Inverse Photoemission Spectroscopy(IPES)apparatus is described. The electron source consists of a Ba O cathode, a focus electrostatic lens, a hemispherical deflection monochromator(HDM), and a transfer electrostatic lens. The HDM adopts a "slit-in and slit-out" structure and the degradation of first-order focusing is corrected by two electrodes between the two hemispheres, which has been investigated by both analytical methods and electron-ray tracing simulations using the SIMION program. Through the focus lens, the HDM, and the standard five-element transfer lens, an optimal energy resolution is estimated to be about 53 MeV with a beam flux of 27 μA. Pass energy(P.E.) of 10 eV and 5 eV are discussed, respectively. 相似文献
69.
为提高现代军事装备的故障检测能力,运用VC++软件编辑控制界面,设计并制作了一种基于51系列单片机的边界扫描控制器;该控制器由USB转串口电路和单片机构成,结构简单、通用性强且成本低廉;将PC机发送的测试指令或数据进行USB与JTAG协议转换,产生符合IEEE1149.1标准的JTAG总线信号;以EPM7128芯片为测试对象,注入JTAG信号并采集测试响应,实现了对基于测试芯片硬件电路的故障检测;测试结果表明:设计的边界扫描控制器可实现对单芯片和芯片级联的边界扫描状态的控制,能避开可编程芯片的内部逻辑程序控制,完成对可编程芯片及其外围电路的故障检测。 相似文献
70.
通过坩埚下降法生长出不同物质的量分数Eu2+掺杂的KCa1-xEuxCl3(x=0.005、0.01、0.02、0.03、0.05)单晶,并对晶体进行了X射线粉末衍射、热重、透过率、光致发光光谱、衰减时间、X射线激发发射光谱等测定。通过相图及结构分析,判断出该晶体为一致熔融化合物,并得出其为正交结构,晶胞参数为a=0.756 04 nm,b=1.048 23 nm,c=0.726 57 nm,空间群为Pnma(62)。在紫外光的激发下,晶体在434 nm左右有一个宽的发射峰,对应于Eu2+的4f65d1→4f7跃迁;光致衰减时间1.473 μs,晶体在X射线激发下的发光强度随Eu2+离子浓度增加而增强。 相似文献