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61.
A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes. 相似文献
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A Novel All-Optical Switch in a Double-Loop Sagnac Ring Coupled with a Nonlinear Ring Resonator 下载免费PDF全文
We propose a novel configuration of all-optical switch based on a double-loop Sagnac ring coupled with a nonlinear ring resonator. In the case of self-phase modulation, the reducing switching threshold power clown to mW is predicted, which is the improvement of earlier works on all-optical switches. The switch optimization is analysed.A way to increase the response speed of all-optical switches is suggested. 相似文献
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The main achievements in our research on the physical phenomena of the excited-state nonlinear absorption in a molecular system and its applications in photonic technology are described. In the first part of this paper, some energy-level models and rate-equations are used to explain various mechanisms of the excited-state nonlinear absorption under differ-ent conditions, such as reverse saturable absorption caused by the triplet and/or the singlet excited-state absorption; saturable absorption due to the first and/or the second singlet excited-state absorption; and the excited-state nonlinear absorption induced by two-photon absorption. The experimental results for metal-organic and C60 materials irradiated by ps and ns laser pulses are consistent with the simulated curves of the transmittance versus flu-ences. In the second part, the applications of excited-state nonlinear absorption in photonic techniques including optical bistability, optical switching, optical limiting, optical modula-tion, optical logic and optical storage are introduced. The working principles of the photonic devices based on the excited-state nonlinear absorption are presented. The experimental characteristic curves are found in good agreement with the theoretical simulations for these devices. 相似文献
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光学双稳性(Optical Bistability)是光波通过某种光学装置强度发生非线性变化的特性, 对应某一输入光强存在着两个或多个稳定的输出光强状态.这是属于量子电子学的非线性光学领域的一个新研究课题.利用光学双稳性可以制成具有光开关、光存储、光放大等功能的光学器件,具有开关 相似文献
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一、前 言 双稳态光学器件(BOD)具有双稳态电子器件类似的功能,可以用作存储器、放大器、振荡器、限幅器和开关元件等.如果实现微型化,做成集成光路元件,其开关速度估计可达1ns对于光学信息处理和光通讯的应用具有重要意义,可能成为未来光学数字计算机的一种基础逻辑元件.因而近年来引起人们的重视. 目前国外研究的BOD器件有两种类型,一类是纯光学的。即将非线性光学介质(如饱和吸收染料,金属蒸汽等)置于F-P谐振腔中构成;另一类是光电结合的,即利用电光普克尔效应构成.而电光BOD器件主要有两种方案:一种是P,W,Smith等人提出的F-P谐振… 相似文献