Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

调谐半导体激光吸收光谱自平衡检测方法研究

可调谐半导体激光吸收光谱技术(TDLAS)是利用半导体激光器的波长调谐特性,扫描待测气体特征吸收线,从而获得待测气体的浓度信息。基于可调谐半导体激光吸收光谱的自平衡检测方法能够有效地消除激光器光强波动等共模噪声和其他同性干扰的影响。实验表明自平衡检测方法可以获得较理想的结果,检测限低于体积比1.2×10-6,与直接吸收光谱法相比降低了一个数量级。自平衡检测电路简单,自带的电子增益补偿机制能够自动进行平衡探测,该方法不用加信号调制和锁相放大器,直接探测待测气体的吸收光谱,从而降低成本,减小系统装置体积,易于集成为便携式痕量气体检测仪。     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.     

Density functional theory study on LaNi4.5Al0.5 hydride phase： electronic properties and sites occupation＊

In this paper the crystal structure, electronic structure and hydrogen site occupation of LaNi4.5Al0.5Hy hydride phase （y = 5.0, 6.0） have been investigated by using full-potential linearized augmented plane wave method. The hydrogen atoms were found to prefer the 6m, 12o and 12n sites, while no 4h sites were occupied. A narrowed Ni-d band is found due to the lattice expansion, the total density of states at EF increases with y, which indicates that the compounds become less stable. The interaction between Al and Ni, H plays a dominant role in the stability of LaNi4.5Al0.5 hydride phase. The smaller the shift of EF towards the higher energy region, the more stable the compounds will be. The obtained results are compared with experimental data and discussed in the light of previous works.     

电解水制氢的实验研究

搭建了电解水制氢的实验装置,并利用该装置研究了氢气与氧气的产生率与电流及时间的关系,同时测定电解装置的能效因数.