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51.
K. Gowri Navada 《Proceedings Mathematical Sciences》1995,105(3):281-285
We give an estimate for the number of elements in the intersection of topological Sidon sets inR
n with compact convex subsets and deduce a necessary and sufficient conditions for an orbit of a linear transformation ofR
n to be a topological Sidon set. 相似文献
52.
K.R. Murali 《Journal of Physics and Chemistry of Solids》2007,68(12):2293-2296
Zinc oxide (ZnO) films were deposited on glass substrates by the sol-gel dip coating method using acrylamide route. The films were characterized by X-ray diffraction studies which indicated wurtzite structure. Optical absorption measurements indicated band gap in the range 3.17-3.32 eV. XPS studies indicated the formation of ZnO. The resistivity of the films were in the range 1000-10,000 ohm cm. 相似文献
53.
Massimo Camarda Antonino La Magna Francesco La Via 《Journal of computational physics》2007,227(2):1075-1093
A modified Kinetic Lattice Monte Carlo model has been developed to predict growth rate regimes and defect formation in the case of the homo-epitaxial growth of close packed crystalline structures. The model is an improvement over standard Monte Carlo algorithms, which usually retain fixed atom positions and bond partners indicative of perfect crystal lattices. Indeed, we extend the concepts of Monte Carlo growth simulations on super-lattices containing additional sites (defect sites) with respect to those of the reference material. This extension implies a reconsideration of the energetic mapping, which is extensively presented, and allows to describe a complex phenomenology that is out of accessibility of standard stochastic approaches. Results obtained using the Kawasaki and the Bond-Counting rules for the transition probability of the Monte Carlo event are discussed in details. These results demonstrate how the defect types (local or extended), the formation mechanisms and the defect generation regimes can be characterized using our approach. 相似文献
54.
We prove that simply connected open manifolds of bounded geometry, linear growth and sublinear filling growth (e.g. finite filling area) are simply connected at infinity. 相似文献
55.
56.
Richards模型在蔬菜生长预测中的应用 总被引:6,自引:0,他引:6
本文从 Richards模型的数学表达出发 ,阐述了模型中各参数初始值的确定以及优化过程 .并利用菜花和菠菜的试验数据建立其“最优”生长模型 . 相似文献
57.
Jacquelyn A. Carioscia Lauren Schneidewind Casey O'Brien Robert Ely Caitlin Feeser Neil Cramer Christopher N. Bowman 《Journal of polymer science. Part A, Polymer chemistry》2007,45(23):5686-5696
The ability to prepare high Tg low shrinkage thiol–ene materials is attractive for applications such as coatings and dental restoratives. However, thiol and nonacrylated vinyl materials typically consist of a flexible backbone, limiting the utility of these polymers. Hence, it is of importance to synthesize and investigate thiol and vinyl materials of varying backbone chemistry and stiffness. Here, we investigate the effect of backbone chemistry and functionality of norbornene resins on polymerization kinetics and glass transition temperature (Tg) for several thiol–norbornene materials. Results indicate that Tgs as high as 94 °C are achievable in thiol–norbornene resins of appropriately controlled chemistry. Furthermore, both the backbone chemistry and the norbornene moiety are important factors in the development of high Tg materials. In particular, as much as a 70 °C increase in Tg was observed in a norbornene–thiol specimen when compared with a sample prepared using allyl ether monomer of analogous backbone chemistry. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5686–5696, 2007 相似文献
58.
关于多项式系数微分方程复振荡理论的两个结果 总被引:2,自引:0,他引:2
本文证明了:如果ak-j(j=1,…,k)为多项式,degak-j=nk-j,存在某个ak-s(1≤s≤k)满足:当1≤j<s时,nk-j/j≤nk-s/s;当s<j≤k时,nk-j<nk-s-(j-s).如果F≠0是整函数且满足σ(F)=β<(nk-s+s)/s,那么微分方程f(k)+a 相似文献
59.
60.
The famous 1960's construction of Golod and Shafarevich yields infinite dimensional nil, but not nilpotent, algebras. However, these algebras have exponential growth. Here, we construct an infinite dimensional nil, but not locally nilpotent, algebra which has polynomially bounded growth.