Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition

We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS₂ monolayer on the SiO₂ substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO₃ flakes on the mica substrate compared to MoO₃ powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS₂ monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO₂ substrate and is essential to further development of the TMDs-related integrated devices.     

One-dimensional electronic order in underdoped surface of YBa2Cu3Oy studied by STM

We have performed low-temperature scanning tunneling microscopy (STM) experiments on the cold-cleaved surface of YBa₂Cu₃O_y single crystals to study the nanoscale electronic order in high-T_c superconductors. STM images measured at low-bias voltage below ∼50 meV show the one-dimensional (1D) electronic modulation along the Cu-O bonds (parallel to the b-axis). The 1D electronic modulation does not have long-range order and the periodicity along the a-axis varies within the range ∼2a-4a depending on the position on the surface, indicating the glassy electronic order in the underdoped CuO₂ plane.     

Ag(100)表面氧吸附的密度泛函理论和STM图像研究

用密度泛函理论研究了氧原子的吸附对于Ag(100)表面结构和电子态的影响.通过PAW总能计算研究了p(1×1)、c(2×2)和(2^1/2×22^1/2)R45°等几种原子氧覆盖度下的吸附结构,以及在上述结构下Ag(100)表面的弛豫特性、吸附能量、功函数等一系列物理量.研究表明：在(2^1/2×22^1/2)R45°-2O吸附Ag(100)表面的情况下,每格两列就会缺失 关键词： Ag(100)表面氧吸附 缺列再构 STM图像     

Simulations of iodine adsorbed Ge(0 0 1) surface and its STM images

A layer of iodine at Ge(0 0 1) surface develops an ordered structure of iodine atoms bound to Ge dimers. Here are discussed atomic structures of Ge(0 0 1) surface covered by 0.25 monolayer of iodine. The p(2×4), p(2×2), c(2×4) and p(1×4) surface structures are found in calculations. The structure with two iodine atoms of the dissociated I₂ molecule adsorbed at both ends of the same germanium dimer is found to be energetically favourable over iodine adsorption at neighbouring dimers. Simulated STM images of the obtained surface structures are presented and compared with experimental data.     

Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface

Metal atoms were deposited on an Si (111)-7 × 7 surface, and they were adsorbed with alcohol gases (CH₃OH/C₂H₅OH/C₃H₇OH). Initially, C_nH_2n+1OH adsorption was simply used as an intermediate layer to prevent the chemical reaction between metal and Si atoms. Through scanning tunneling microscopy (STM) and a mass spectrometer, the C_nH_2n+1OH dissociation process is further derived as the construction of a surface quasi-potential with horizontal and vertical directions. With the help of three typical metal depositions, the surface characteristics of CH₃OH adsorption are more clearly presented in this paper. Adjusting the preheating temperature, the difference of thermal stability between CH₃O^– and H⁺ could be obviously derived in Au deposition. After a large amount of H⁺ was separated, the isolation characteristic of CH₃O^– was discussed in the case of Fe deposition. In the process of building a new metal-CH₃O^–-H⁺ model, the dual characteristics of CH₃OH were synthetically verified in Sn deposition. CH₃O^– adsorption is prone to influencing the interaction between the metal deposition and substrate surface in the vertical direction, while H⁺ adsorption determines the horizontal behavior of metal atoms. These investigations lead one to believe that, to a certain extent, the formation of regular metal atomic structures on the Si (111)-7 × 7-CH₃OH surface is promoted, especially according to the dual characteristics and adsorption models we explored.     

Monolayer and Bilayer Formation of Molecular 2D Networks Assembled at the Liquid/Solid Interfaces by Solution-Based Drop-Cast Method

In recent years, extending self-assembled structures from two-dimensions (2D) to three-dimensions (3D) has been a paradigm in surface supramolecular chemistry and contemporary nanotechnology. Using organic molecules of p-terphenyl-3,5,3′,5′-tetracarboxylic acid (TPTC), and scanning tunneling microscopy (STM), we present a simple route, that is the control of the solute solubility in a sample solution, to achieve the vertical growth of supramolecular self-assemblies, which would otherwise form monolayers at the organic solvent/graphite interface. Presumably, the bilayer formations were based on π-conjugated overlapped molecular dimers that worked as nuclei to induce the yielding of the second layer. We also tested other molecules, including trimesic acid (TMA) and 1,3,5-tris(4-carboxyphenyl)-benzene (BTB), as well as the further application of our methodology, demonstrating the facile preparation of layered assemblies.     

表面形貌对GaAs生长速率测量的影响

本文利用Reflection High Energy Electron Diffraction (RHEED)强度振荡测量GaAs同质外延生长,发现其生长速率随生长厚度按一定指数函数关系衰减.这种衰减与GaAs表面形貌的变化密切相关,表面台阶数量的增加使层状生长模式由2D成核模式逐渐转变为台阶流模式.由于RHEED强度振荡所测的生长速率与表面的粗糙程度密切相关,表面情况改变对生长速率会有一定的影响,导致测量的生长速率逐渐的衰减.根据生长速率随生长厚度的增加而衰减的拟合曲线,可以获得一个准确的生长速率.     

Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature

We demonstrate that the strong N₂ bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N₂ with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N₂ that significantly weaken the N₂ bond. This activated N₂ triple bond dissociation on the surface leads to the formation of a Si₃N interface.