利用法拉第效应测光波波长

基于法拉第效应和柯西色散公式给出了一种新型的测量光波波长的方法。根据旋光角θ与磁感应强度B,获得样品的费尔德常数,再利用费尔德常数与波长的关系计算出光波波长,实现光波波长的测定。研究表明倍频法和消光法测量He-Ne激光器波长的误差分别为3.47%和6.67%,实现了波长较为精确的测量,同时提供了一种新的测量单色光波波长的方法。     

固相反应法制备NaInO_2纳米颗粒及其光催化性能研究

以Na2CO3和In2O3为原料,采用固相反应法制备出纯相NaInO2纳米颗粒。通过X射线衍射图谱(XRD)、扫描电子显微镜(SEM)、紫外可见漫反射光谱(DRS)等手段对样品进行表征。研究n(Na2CO3)/n(In2O3)比和焙烧温度对产物结构和形貌的影响,并以甲醛溶液为目标降解物,考察NaInO2纳米颗粒的光催化性能。结果表明,在n(Na2CO3)/n(In2O3)=2∶1,750℃焙烧2 h条件下获得纯相菱方相的长方体形NaInO2纳米颗粒,晶粒尺寸为33.6nm。经可见光照射6 h后,NaInO2纳米颗粒对甲醛的降解率可达48%。     

基于金属锡掺杂浓度变化的光学性能可调谐ITO薄膜制备研究

本文通过电子束蒸发技术制备了金属锡掺杂浓度不同的一系列ITO薄膜。采用X射线衍射仪、原子力显微镜、紫外-可见光-近红外分光光度计、四探针测电阻仪和Z扫描系统分别对ITO薄膜的物相结构、微观形貌、光学吸收、方块电阻和非线性光学性能进行测试和表征。结果表明，随着金属锡掺杂浓度由10%增加到30%:ITO薄膜的结晶质量增加；薄膜表面粗糙度增加，晶粒尺寸逐渐增大；等离子体吸收增强，且吸收峰的位置发生红移，光学带隙变窄；薄膜的方块电阻不断减小；非线性吸收系数逐渐增加，绝对值最大可以增至2.59×10^-7 cm/W。时域有限差分拟合结果表明金属锡掺杂浓度不同的ITO薄膜电场强度变化规律与实验结果相一致。     

瓶状InN-In2O3纳米复合材料的制备及增强的甲醛气敏性能

采用溶胶-凝胶法制备了In₂O₃纳米粉体, 通入NH₃进行反应得到了中间产物InN基底材料, 再通过原位氧化过程最终获得了InN-In₂O₃纳米复合材料, 并利用X射线衍射仪(XRD)、 扫描电子显微镜(SEM)、 透射电子显微镜(TEM)、 X射线光电子能谱仪(XPS)等对所制备材料的组成、 形貌及结构等进行了表征测试. 结果表明, 该纳米复合材料呈瓶状结构. 气敏性能测试结果表明, 其在较低工作温度(75 ℃)下对甲醛气体的检出限可低至ppb级(1 ppb=1.3 μg/m³), 具有灵敏度较高(对0.13 mg/m³即100 ppb甲醛的灵敏度为12)、 响应时间较短(2 s)以及选择性和稳定性较强的优良性能. 在湿度对传感器灵敏度的影响测试中, 由于甲醛的水溶特性, 随着湿度的变化, 传感器的灵敏度发生变化. 在低甲醛浓度时湿度的变化对灵敏度的影响较大, 高浓度时影响反而较小.     

A Low-Pump-Threshold High-Repetition-Rate Intracavity Optical Parametric Generator Based on Periodically Poled Lithium Niobate

A low-pump-threshold high-repetition-rate intracavity optical parametric generator （IOPG） by using a periodically poled lithium niobate （PPLN） is reported. The PPLN, which is 18.7mm long and has a grating period of 28.93tzm at room temperature, is inserted in a diode-end-pumped Nd：YV04 laser with an acousto-optic Q switch. The parametric generation threshold is 1.3 W （diode laser power） at a Q-switch repetition rate of 19 kHz. At an incident diode pump power of 5 W, an average signal output power of 280mW has been achieved. The signal pulse duration is approximately 85 ns. By changing the crystal temperature from 120℃ to 250℃, the signal wavelength can be tuned from 1.493μm to 1.538μm.     

Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays

Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO₂), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO₂(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (T_c) decreased from 68° to 51°. The mechanism of T_c decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO₂ films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO₂, which must be instructive for the other strongly correlated materials and important for applications.     

Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga₂O₃ Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal-semiconductor-metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga₂O₃ films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230-250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga₂O₃/Au Schottky junction can effectively suppress the PPC in the photodetector, while maintaining high gain. The mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models, which is attributed to the correlation with ionized oxygen vacancies in the Schottky junction. The positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen vacancies. The realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.     

线性酚醛树脂在集成电路领域的应用与研究进展

在集成电路领域中,线性酚醛树脂作为基础树脂,是关键的功能材料。然而,传统的酚醛树脂存在稳定性差、感光速度慢、透明度、分辨率和机械强度低等问题,增加了应用成本和技术难度,降低了酚醛树脂在集成电路领域的经济效益。因此,需要对传统线性酚醛树脂进行改性以更好地应用于集成电路领域。本文综述了近年来线性酚醛树脂在芯片光刻胶、电子封装及覆铜板应用的研究现状,总结了目前改性线性酚醛树脂的主要方法,并展望了线性酚醛树脂的发展趋势,为未来高性能集成电路应用材料的研发提供参考。