气相色谱－三重四极杆质谱法测定动物源性食品中砜吡草唑残留量

建立了动物源性食品中砜吡草唑残留量的气相色谱－三重四极杆质谱检测方法。猪肉、猪肝、鸡肉、鸡肝、牛奶和鸡蛋中的砜吡草唑用乙腈提取,经乙二胺-N-丙基硅烷化硅胶、十八烷基键合硅胶和无水硫酸镁去除杂质,离心后取上清液氮吹至干,加入丙酮复溶、过滤后经气相色谱－三重四极杆质谱检测,外标法定量。通过对仪器条件、提取溶剂和净化方式等进行优化,确定最合适的前处理方法和仪器条件。对样品的基质效应进行考察,发现6种基质中砜吡草唑的基质效应均小于20%,为弱基质效应,无需采取补偿措施。在优化实验条件下,砜吡草唑在0.5 ~ 100 μg/L范围内线性关系良好,相关系数为0.999 5。空白样品在4个加标水平下的平均回收率为85.8% ~ 106%,相对标准偏差（n = 6）为3.1% ~ 6.8%,方法定量下限为0.001 mg/kg。采用该方法对50个动物源性食品进行测定,在1个牛肉样品和1个羊肉样品中检出砜吡草唑。该方法操作简单、灵敏度高、准确性好,适用于动物源性食品中砜吡草唑的检测,可为砜吡草唑在动物源性食品中的风险监控提供技术支撑。     

用散粒噪声测量碳纳米管中Luttinger参数

将碳纳米管的载流子输运用基本电荷为ge的Fermi液态模型描述，利用散射理论计算出纳米管中的零频率散粒噪声，在绝对零度下，存在一个强势垒的碳纳米管的散粒噪声为2geI.提出了一种测试纳米管Luttinger参数的新方法：在纳米管上形成一个强势垒，通过测试其散粒噪声，就可以计算出g因子. 关键词： 碳纳米管 Luttinger参数 散粒噪声 散射理论     

Cr掺杂ZnO纳米线的电子结构和磁性

采用自旋极化密度泛函理论系统研究了Cr掺杂ZnO纳米线的电学、磁学以及光学属性.计算结果显示,Cr原子沿[0001]方向替代ZnO纳米线中的Zn原子时体系一般呈现铁磁耦合,沿[1010]和[0110]方向替代Zn原子时体系呈现反铁磁耦合,且磁性耦合状态在费米能级附近出现了明显的自旋劈裂现象,发生了强烈的Cr 3d和O 2p杂化效应.自旋态密度计算结果显示,磁矩主要来源于Cr原子未成对3d态电子的贡献,磁矩的大小与Cr原子的电子排布有关.光学性质计算结果显示,Cr掺杂ZnO纳米线在远紫外和近紫外都具有明显的吸收峰,吸收峰发生了明显的红移.这些结果都表明Cr掺杂ZnO纳米线也许是一种很有前途的稀磁半导体材料. 关键词： ZnO 纳米线 第一性原理 磁性     

HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积（HFCVD）法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜（SEM）分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

Adsorption and Reaction of CO on （100） Surface of SrTiO3 by Density Function Theory Calculation

Adsorption and reaction of CO on two possible terminations of SrTiO3 （100） surface are investigated by the first-principles calculation of plane wave ultrasoft pseudopotentiai based on the density function theory. The adsorption energy, Mulliken population analysis, density of states （DOS） and electronic density difference of CO on SrTiO3 （100） surface, which have never been investigated before as far as we know are performed. The calculated results reveal that the Ti-CO orientation is the most stable configuration and the adsorption energy （0.449eV） is quite small. CO molecules adsorb weakly on the SrTiO3 （100） surface, there is predominantly electrostatic attraction between CO and the surface rather than a chemical bonding mechanism.     

In2O3电子结构与光学性质的第一性原理计算

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了In2O3电子结构和光学线性响应函数, 系统研究了In2O3电子结构与光学性质的内在关系. 利用计算的能带结构和态密度分析了带间跃迁占主导地位的In2O3材料的能量损失函数、介电函数、反射图谱, 根据电荷密度差分图分析了In2O3材料的化学和电学特性. 研究结果表明In2O3光学透过率在可见光范围内高达85%, 可作为优异的透明导电薄膜材料. 同时, 计算结果为我们制备基于In2O3透明导电材料的设计与大规模应用提供了理论依据, 也为监测和控制这一类透明导电材料的生长过程提供了可能性.     

多壁碳纳米管互连的单壁碳纳米管晶体管的频率特性

用多壁碳纳米管(MWCNTs)作为互连线制备出了单壁碳纳米管场效应晶体管(SWCNT FETs), 对比研究了用多壁碳纳米管作为互连线和用金属作为互连线的两种情况. 结果表明, 二者的直流(DC)性能基本一致, 而用多壁碳纳米管作为互连线的交流(AC)性能略优于用金属作为互连的情况. 交流测量表明, 至少在20 MHz的频率下, 多壁碳纳米管互连的单壁碳纳米管晶体管仍有很好的响应速率, 器件能够正常工作.     

Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation

The steady-state and transient electron transport properties of $\beta $-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructures were investigated by Monte Carlo simulation with the classic three-valley model. In particular, the electronic band structures were acquired by first-principles calculations, which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas (2DEG), and the quantization effect was considered in the $\varGamma $ valley with the five lowest subbands. Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger-Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered. The simulated low-field electron mobilities agree well with the experimental results, thus confirming the effectiveness of our models. The results show that the room temperature electron mobility of the $\beta $-(Al$_{0.188}$Ga$_{0.812}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure at 10 kV$ \cdot$cm$^{-1}$ is approximately 153.669 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and polar optical phonon scattering would have a significant impact on the mobility properties at this time. The region of negative differential mobility, overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it. This work offers significant parameters for the $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure that may benefit the design of high-performance $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure-based devices.     

First Principles Study of Adsorption and Reaction of CO on SrTiO3 （100） Surface： the Role of Surface Oxygen Vacancies

The adsorption and reaction of CO on SrTiO3 （100） surface with and without surface oxygen vacancy are investigated by the first-principles calculation based on the density functional theory. The calculated results reveal that the oxygen vacancy site prefers to the activation of the C-O bond. The adsorption energies increase to 1.0855 and 0.3245eV for defect-CO and defect-OC orientations, respectively. Particularly the C-O bond is elongated by about 0.1285 ？ in the defect-OC orientation compared with that in the Ti-OC one without surface oxygen vacancies. There is predominantly a chemisorption mechanism between the CO molecule and the surface in the defect-CO orientation.     

纳米金刚石的变温场发射

研究了温度变化对沉积在钛基底上的纳米金刚石的场发射特性的影响,发现纳米金刚石场发射电流随温度和电场的升高而增大,场发射特性偏离了传统的Fowler-Nordheim理论,场发射电流的稳定性基本没有变化.分析了场发射电流增大的机理,表明是由于纳米金刚石的尺度效应以及外电场下金刚石产生了大量的热载流子共同作用的结果.研究还表明基底钛在温度升高到一定程度后,在外加电场下会有较大的电流产生,对场发射造成较大的影响,表明基底钛具有一定的温度敏感性和电压敏感性. 关键词： 场发射 纳米金刚石 尺度效应 热载流子