Conditions for dominated splittings

In this paper, we solve the problem proposed by Lan Wen for the case of dimM = 3. Roughly speaking, we prove that for fixed i, f has C1 persistently no small angles of index i if and only if f has a dominated splitting of index i on the C1 i-preperiodic set P＊i（f）.     

探究重离子碰撞中密度和动量依赖的单核子势的影响

从Skyrme有效核子-核子相互作用出发,得到了单核子平均场、介质中的核子-核子散射截面以及核子的初始化密度分布,自洽地用于 Boltzmann-Uehling-Uhlenbeck(BUU) 输运模型中。使用对应不同软硬程度对称能、相反中子-质子有效质量劈裂的六组Skyrme参数(SkI2, Gs, KDE0v1, NRAPR, BSk9和SV-mas08),利用BUU输运模型对$^{124}{\rm{Sn}}$+$^{124}{\rm{Sn}}$和$^{112}{\rm{Sn}}$+$^{112}{\rm{Sn}}$进行了碰撞模拟。结果表明,由中子-质子有效质量劈裂效应引起的自由双中质比差异在较高的核子动能下明显。此外,与NSCL实验数据的比较表明,在用到的六种相互作用之中,KDE0v1相互作用所对应的双中质比结果似乎与实验更为符合。     

类镍钆(Gd36+)离子的双电子复合系数研究

 在自旋轨道劈裂阵模型下,通过类铜组态理论计算出类镍Gd³⁶⁺的双电子复合速率系数,得出其在电子温度 0.02~5keV 范围内的变化规律,并分析了影响双电子复合速率系数的主要因素是相应的自电离系数和离化势,这为等离子体的诊断提供了一种新的方法。     

超短激光场中用劈裂算子深化波函数

介绍了用壁裂算子求解超短激光场中原子系统函数的方法。此法比标准差分法给出更准确的模拟结果。许多结果可从演化的波函数中得到。作为例子，计算了一种简单原子的电离风率和谐波发射谱。     

K*(892)电磁质量反常(英文)

电中性的 K* (892 )电磁质量可以大于带电荷的 K* (892 ) .这是异乎寻常的现象 ,将被称为K* -电磁质量反常 .评述了这个课题 ,并指出 K* 的质量劈裂可以在北京谱仪 (BES)上作精密测量. Electromagnetic masses of neutral K *(892) may be larger than one of charged K *(892). It is unusual and is called K *-EM-mass anomaly. We review the studies on this issue, and point out that K *-mass splitting can be measured in BES accurately.     

短切碳纤维C/SiC陶瓷基复合材料的动态劈裂拉伸实验

为了探究C/SiC陶瓷基复合材料的动态断裂力学行为和破坏形态,利用分离式霍普金森压杆(split Hopkinson pressure bar,SHPB)装置对3种不同短切碳纤维体积分数的C/SiC陶瓷基复合材料进行了动态劈裂实验,并利用扫描电子显微镜扫描了C/SiC复合材料试件的破坏界面,分析了C/SiC陶瓷基复合材料的失效特征和增韧机理。实验结果表明:C/SiC复合材料在冲击劈裂实验过程中,同一短切碳纤维体积分数下试件的动态抗拉强度随着冲击气压的增大而增大; 短切碳纤维体积分数为16.0%时, 材料的抗拉强度最低; 冲击后,试件的整体破坏情况与冲击气压、短切碳纤维体积分数有关。     

基于能量守恒理论的带肋钢筋-混凝土粘结滑移本构关系研究

针对钢筋-混凝土粘结滑移的劈裂破坏模式,将整个破坏过程分为未开裂的弹性阶段和带裂缝阶段。弹性阶段采用弹性厚壁圆筒模型,带裂缝阶段采用考虑混凝土软化特性的厚壁圆筒模型。基于这两种模型,研究了粘结滑移劈裂破坏过程的能量变化规律,推导出了两种模型的能量计算公式。利用能量守恒定律建立了钢筋-混凝土粘结滑移本构关系的微分方程,并通过数值积分方法得到了粘结滑移本构模型。该本构模型能够体现混凝土与钢筋材料参数和几何参数的影响,对不同形状的粘结滑移关系曲线具有较好的适应性。最后,将得到的本构关系与文献的试验结果进行对比,并分析了各参数的变化规律。     

高效液相色谱法同时测定苏木中的巴西苏木素和原苏木素B

建立了同时测定苏木中巴西苏木素和原苏木素B的高效液相色谱检测方法。采用Agela Venusil XBP-C18(4.6 mm×150 mm,5μm)色谱柱,以甲醇-0.2%甲酸溶液为流动相,梯度洗脱,流速1.0 mL/min,测定温度为35℃,检测波长285 nm。巴西苏木素和原苏木素B的质量浓度均在0.005～1.0 mg/mL时与色谱峰面积之间线性关系良好,相关系数都为0.9999;回收率范围分别为96.7%～101.4%和99.4%～103.0%,相对标准偏差(RSD)为2.0%和1.3%。该法可以用于苏木药材的鉴定。     

振动条件下颗粒的分离现象

介绍并分析比较了竖直振动条件下巴西坚果效应与反巴西坚果效应形成的机制和转化条件,以及水平振动下颗粒的分离现象,提出一些意见和建议.     

点缺陷石墨烯的电导

Graphene is one of the most promising materials in nanotechnology and has attracted worldwide attention and research interest owing to its high electrical conductivity, good thermal stability, and excellent mechanical strength. Perfect graphene samples exhibit outstanding electrical and mechanical properties. However, point defects are commonly observed during fabrication which deteriorate the performance of graphene based-devices. The transport properties of graphene with point defects essentially depend on the imperfection of the hexagonal carbon atom network and the scattering of carriers by localized states. Furthermore, an in-depth understanding of the effect of specific point defects on the electronic and transport properties of graphene is crucial for specific applications. In this work, we employed density functional theory calculations and the non-equilibrium Green's function method to systematically elucidate the effects of various point defects on the electrical transport properties of graphene, including Stone-Waals and inverse Stone-Waals defects; and single and double vacancies. The electrical conductance highly depends on the type and concentration of point defects in graphene. Low concentrations of Stone-Waals, inverse Stone-Waals, and single-vacancy defects do not noticeably degrade electron transport. In comparison, DV585 induces a moderate reduction of 25%–34%, and DV55577 and DV5555-6-7777 induce significant suppression of 51%–62% in graphene. As the defect concentration increases, the electrical conductance reduces by a factor of 2–3 compared to the case of graphene monolayers with a low concentration of point defects. These distinct electrical transport behaviors are attributed to the variation of the graphene band structure; the point defects induce localized states near the Fermi level and result in energy splitting at the Dirac point due to the breaking of the intrinsic symmetry of the graphene honeycomb lattice. Double vacancies with larger defect concentrations exhibit more flat bands near the Fermi energy and more localized states in the defective region, resulting in the presence of resonant peaks close to the Fermi energy in the local density of states. This may cause resonant scattering of the carriers and a corresponding reduction of the conductance of graphene. Moreover, the partial charge densities for double vacancies and point defects with larger concentrations exhibit enhanced localization in the defective region that hinder the charge carriers. The electrical conductance shows an exponential decay as the defect concentration and energy splitting increase. These theoretical results provide important insights into the electrical transport properties of realistic graphene monolayers and will assist in the fabrication of high-performance graphene-based devices.