Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

Undoped and Si-doped AlGaN/AlN multiple quantum wells(MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy.High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping.Room-temperature(RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping.The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions.Further theoretical simulation also supports the above results.     

[四(3-甲氧基-4-羟基苯基)]铽卟啉分光光度法测定微量铅

以Meso-四(3-甲氧基-4-羟基)铽卟啉[T-(3-MO-4-HP)P-Tb]为微量铅的显色剂,在pH值为4.95的HAc-NaAc缓冲溶液中,双-2-乙基己基硫代琥珀酸钠(AOT)微乳液存在下,沸水浴加热4 min显色反应完全.在最大吸收波长478 nm处,配合物的摩尔吸光系数ε为7.49×105 L/(mol.cm),铅含量在0.0～0.2μg/mL范围内符合朗伯比尔定律.方法的灵敏度高、选择性好,用于水样中痕量铅的测定,结果满意。