金属卟啉化合物光催化反应研究(Ⅳ)─四苯基钴卟啉光助还原O2反应

研究了不同的有机溶剂中四苯基钴卟啉(Co(Ⅱ)TPP)的光助还原O₂反应,详细讨论了溶剂效应和有机碱的轴向配位效应对光还原反应的影响,同时对反应机理进行了探讨。结果表明,溶剂的极性越大或有机碱的轴向配位能力越强时,光还原O₂反应的速率越大。     

铁、镧共掺杂介孔TiO2微球的制备及光催化性能研究

以钛酸异丙酯为钛源,利用三嵌段共聚物EO106 PO70 EO106(F127)修饰的溶胶-凝胶法合成了La、Fe共掺杂的单分散TiO2介孔微球.并通过X射线衍射(XRD)、场发射扫描电镜(FESEM)、能谱分析(EDX)、透射电镜(TEM)、BET、X射线光电子能谱(XPS)、紫外-可见光漫反射技术对样品的物相组成及微观结构进行了表征,利用紫外光照射降解亚甲基蓝溶液的方法测定其光催化性能.结果表明:与纯TiO2介孔微球相比,La3+的掺入抑制了TiO2晶粒的长大,La3+和Fe3+共掺入TiO2介孔微球的紫外-可见光的吸收带边发生红移,禁带宽度减小;在紫外光照射下,1at;La3+掺杂以及Fe3+、La3+共掺TiO2介孔微球的光催化活性均高于纯TiO2,其中1at;Fe/1at;La-TiO2的光催化性能最好.     

基于暗I-V特性曲线对晶硅电池杂质和缺陷性质研究

暗I-V特性曲线是一种有效监测晶硅电池内部杂质和缺陷性质的表征手段.本文利用有限差分法较系统地研究了杂质和缺陷性质对暗I-V特性曲线的影响,并给出了利用暗I-V特性曲线判断晶硅电池内部杂质和缺陷类型和分布的基本准则,结果表明:在大于0.75 V的正向偏压区域,暗I-V特性曲线的明显变化可作为判断为由晶硅电池体内杂质和缺陷引起;在0.1 V~0.75 V的正向偏压区域,暗I-V特性曲线的理想因子分区性质可作为晶硅电池体内和表面杂质和缺陷的依据.     

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method

Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy(AFM), x-ray diffraction(XRD), high-resolution transition electron microscopy(HRTEM), photoluminescence(PL), and x-ray photoelectron spectroscopy(XPS) characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation(002). The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.