短脉冲激光加热模型的遴选原则

 利用推导出的1维半空间光致热弹性应力响应的精确解，对激光与材料相互作用的加热模型的选取进行了研究。理论分析和计算结果表明：常用的表面加热模型只有在热穿透深度远大于光吸收长度时有效，若将其应用于超短脉冲激光（ps以下量级）加热的情况，可能会导致较大的误差；皮秒和飞秒激光辐照的热效应须用体加热模型计算。     

The Casimir effect of Reissner-NordstrSm black hole

The stress tensor of a massless scalar field satisfying a mixed boundary condition in a （1 ＋ 1）-dimensional Reissner- Nordstrom black hole background is calculated by using Wald＇s axiom. We find that Dirichlet stress tensor and Neumann stress tensor can be deduced by changing the coefficients of the stress tensor calculated under a mixed boundary condition. The stress tensors satisfying Dirichlet and Neumann boundary conditions are discussed. In addition, we also find that the stress tensor in conformal flat spacetime background differs from that in flat spacetime only by a constant.     

用干涉方法测量薄膜应力

基于基片弯曲法和牛顿环的基本原理,使用He-Ne激光器、扩束镜、凸透镜和带分光镜的移测显微镜,搭建了薄膜应力测量装置.采用直流溅射法制备了厚度为30~144 nm的银薄膜,衬底采用厚度为0.15 mm、直径为18 mm的圆形玻璃片.实验发现,薄膜厚度对银薄膜的内应力有显著的影响,在薄膜厚度很小时,随着薄膜厚度的增加,应力迅速增大,达到最大值后,随着厚度的继续增加,薄膜应力下降较快并趋于稳定值.     

Assessment of thermal expansion coefficient of methylsilsesquioxane thin film

For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

各向异性材料中共线刚性线夹杂的纵向剪切问题

本文研究各向异性材料中共线刚性线夹杂，（有时称作“硬裂纹”或“反裂纹”问题）的纵向剪切问题。利用复变函数方法，提出了一般问题的公式和某些实际重要问题的封闭形式解，考察了刚性线端点附近的应力分布．从本文解答的特殊情形，可以直接导出各向同性材料相应问题的公式和结果，包括某些已有的结果￣［７］．     

A rate-dependent algebraic stress model for turbulence

Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.     

Stress concentration around a circular hole in a transversely isotropic spherical shell

Analytical expressions for the stresses near a circular hole in a transversely isotropic shallow spherical shell under uniform pressure are derived. The form of the solution depends on the range of change in the compliance to transverse shear. The influence of the relative radius of the hole and the compliance to transverse shear on the stress concentration is analyzed.__________Translated from Prikladnaya Mekhanika, Vol. 40, No. 12, pp. 99–106, December 2004.     

等厚双层涂层材料受集中力作用的平面问题理论解

界面应力的正确评价是分析薄膜涂层材料力学特性的难题之一。利用镜像点法和Dirichlet等值性原理，本文推导了等厚双层薄膜涂层材料受表面集中力作用的平面问题理论解。该显式理论解是以固定在各镜像点上的局部坐标系下的Goursat应力函数的形式给出的。对应于高阶镜像点的应力函数，可通过递推的方法，从对应于低阶镜像点的应力函数求得，而且也易于计算机编程。随着镜像点阶数的增大，它与界面的距离也越来越大，因而相对应的应力函数对界面应力的影响越来越小。最后的算例表明，只需考虑前面有限个镜像点，便可获得足够精度的解。该理论解可作为格林函数，以求解复杂问题的理论解，也可用作边界元法的基本解，提高数值计算的精度和效率。