Electronic structures of vacancies in Co_3Sn_2S_2

Co_3Sn_2S_2 has attracted a lot of attention for its multiple novel physical properties, including topological nontrivial surface states, anomalous Hall effect, and anomalous Nernst effect. Vacancies, which play important roles in functional materials, have attracted increasing research attention. In this paper, by using density functional theory calculations, we first obtain band structures and magnetic moments of Co_3Sn_2S_2 with exchange–correlation functionals at different levels. It is found that the generalized gradient approximation gives the positions of Weyl points consistent with experiments in bulk Co_3Sn_2S_2. We then investigate the electronic structures of defects on surfaces with S and Sn terminations which have been observed in experiments. The results show that the single sulfur vacancy on the S-terminated surface introduces localized bond states inside the bandgap near the Fermi level. For di-and tri-sulfur vacancies, the localized defect states hybridize with neighboring ones, forming bonding states as well as anti-bonding states. The Sn vacancy on the Sn-terminated surface also introduces localized bond states, which are merged with the valence bands. These results provide a reference for future experimental investigations of vacancies in Co_3Sn_2S_2.     

Si-Li合金相嵌锂性能和弹性性能的第一性原理计算

采用基于密度泛函理论的第一性原理平面波赝势方法,计算了锂离子电池硅负极材料在嵌Li过程中形成LixSi合金相(0≤x≤4.4)的形成能、嵌Li电位、晶体结构、电子结构和弹性性能。计算结果表明,随着嵌Li量的增加,LixSi合金体系总量能逐渐降低,LixSi合金相的形成能均为负值,表明硅负极材料的嵌Li反应在热力学可以自发进行;随着嵌Li量的增加,LixSi合金相的平均嵌Li电位逐渐降低,体积膨胀率逐渐增大,这与实验测得的结果具有良好的一致性。LixSi合金相在费米能级附近的电子主要由Si原子的p电子和Li原子的s电子共同贡献,LixSi合金相的费米能态密度随着嵌Li量的增加在整体上呈现增大趋势,电子导电性增强。随着嵌Li量的增加,LixSi合金相的体积模量(B)、剪切模量(G)和杨氏模量(E)逐渐降低,G/B值表明LixSi合金相均呈脆性,导致硅在嵌Li过程容易发生脆性结构破坏。     

Insights into structural,electronic, optical and thermoelectric properties of WB and WAlB: a first principle study

Detailed investigations on structural, electronic, optical and thermoelectric properties of WB and WAlB have been done by using a full-potential linearised augmented plane wave method. Different approximations have been used to treat the exchange–correlation potential. The PBEsol-GGA method is found to be the most suitable for WB and WAlB. The obtained values of the equilibrium structural parameters such as lattice constants, volume and bulk modulus are in good agreement with the available experimental and theoretical data. The results of electronic charge density plots show that WB has a strong covalent bond between B-B and an ionic bond between W-B. In case of WAlB, the distance between any two atoms is more than the corresponding interatomic distance in WB. The band structure and density of states around the fermi level suggest that WB has a metallic nature and WAlB has a semimetal-like character. The optical properties are determined and analysed in detail for the first time. The larger reflectivity in the low-energy region (infrared) indicates that these materials can be used as a coating material to remove solar heating. The effects of temperature on thermoelectric parameters are also studied for the first time. High value power factor and high thermal conductivity suggest that WB and WAlB are potential candidates for thermoelectric technological applications.     

γ石墨炔衍生物结构稳定性和电子结构的第一性原理研究

通过基于密度泛函理论的第一原理计算,系统研究了γ石墨炔衍生物的结构稳定性、原子构型和电子性质.γ石墨炔衍生物的结构是由碳六元环以及连接六元环间的碳链组成,碳链上的碳原子数为N=1—6.研究结果表明,碳链上碳原子数的奇偶性对γ石墨炔衍生物的结构稳定和相应的原子构型、电子结构性质具有很大的影响.其奇偶性规律为:当六元环间的碳原子数为奇数时,体系中的碳链均为双键排布,系统呈现金属性;当六元环间的碳原子数为偶数时,系统中的碳链形式为单、三键交替排列,体系为直接带隙的半导体.直接带隙的存在能够促进光电能的高效转换,预示着石墨炔在光电子器件中的应用优势.N=2,4,6的带隙分布在0.94—0.84 eV之间,带隙的大小与碳链上三键的数量和长度有关.研究表明,将碳原子链引入到石墨烯碳六元环之间,通过控制引入的碳原子个数可以调控其金属和半导体电子特性,为设计和制备基于碳原子的可调控s-p杂化的二维材料和纳米电子器件提供了理论依据.     

T型石墨烯及其衍生物的结构与电子特性

采用基于密度泛函理论的第一原理方法研究了T型石墨烯及其衍生物-n(n=1—5)的结构稳定性和电子结构性质.T型石墨烯是一种拥有四角形环的二维碳材料同素异构体,通过改变连接四角形环的碳链上的碳原子个数n,可以得到一系列的sp-sp~2杂化结构,称其为T型石墨烯衍生物-n.计算结果表明:这些材料的结构稳定性、化学键类型和电子结构性质都依存于n的奇偶性.其中T型石墨烯(n=0)的结构最稳定,并形成一个由8个碳原子构成的大环.声子谱计算的结果表明,n为偶数时的体系具有动力学稳定性,而n为奇数时的体系则是不稳定的.n为偶数时体系四角形环之间的碳链上的化学键呈单、三键交叉排列,体系显示为金属性特征,且随着n的增大,体系的金属性加强.n为奇数时体系四角形环之间的碳链上的化学键则为双键连续排列,体系呈金属性且具有磁性(n=1除外).研究表明该系列材料作为一种新的二维碳材料同素异构体,具有独特的结构和丰富的电子结构特性,很可能在纳米器件中得到广泛应用.     

La-N共掺杂锐钛矿相TiO2的电子结构及光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理平面波超软赝势方法对锐钛矿相TiO2、La单掺杂及La-N共掺杂锐钛矿相TiO2的电子结构进行计算,分析La单掺杂及La-N共掺杂对锐钛矿相TiO2的晶体结构、能带、态密度、差分电荷密度和光吸收性质的影响. 结果表明,掺杂后TiO2的晶格发生畸变,原子间键长的变化使晶格发生膨胀;掺杂后TiO2的禁带宽度减小,并在禁带中引入杂质能级,导致TiO2的吸收图谱产生红移现象;与La单掺杂相比,La-N共掺杂锐钛矿相TiO2的红移程度增强.     

Si-Li合金相嵌锂性能和弹性性能的第一性原理计算

采用基于密度泛函理论的第一性原理平面波赝势方法,计算了锂离子电池硅负极材料在嵌Li过程中形成LixSi合金相(0≤x≤4.4)的形成能、嵌Li电位、晶体结构、电子结构和弹性性能。计算结果表明,随着嵌Li量的增加,LixSi合金体系总量能逐渐降低,LixSi合金相的形成能均为负值,表明硅负极材料的嵌Li反应在热力学可以自发进行;随着嵌Li量的增加,LixSi合金相的平均嵌Li电位逐渐降低,体积膨胀率逐渐增大,这与实验测得的结果具有良好的一致性。LixSi合金相在费米能级附近的电子主要由Si原子的p电子和Li原子的s电子共同贡献,LixSi合金相的费米能态密度随着嵌Li量的增加在整体上呈现增大趋势,电子导电性增强。随着嵌Li量的增加,LixSi合金相的体积模量(B)、剪切模量(G)和杨氏模量(E)逐渐降低,G/B值表明LixSi合金相均呈脆性,导致硅在嵌Li过程容易发生脆性结构破坏。     

Modulating the properties of monolayer C_2N: A promising metal-free photocatalyst for water splitting

Photocatalytic water splitting has gained increasing attention, since it utilizes renewable resources, such as water and solar energy, to produce hydrogen. Using the first-principles density functional theory, we investigate the properties of the single layer C_2N which was successfully synthesized. We reveal that monolayer C_2N has a substantial direct band gap of 2.45 eV. To regulate its band gap, four different nonmetal elements(B, O, P, and S) on the cation and anion sites are considered. Among them, B-doped N site is the most effective one, with the lowest formation energy and a band gap of 2.01 eV. P-doped N site is the next, with a band gap of 2.08 eV, though its formation energy is higher. The band alignments with respect to the water redox levels show that, for these two dopings, the thermodynamic criterion for the overall water splitting is satisfied. We therefore predict that B-or P-doped C_2N, with an appropriate band gap and an optimal band-edge position, would be a promising photocatalyst for visible-light water splitting.     

Nd、N掺杂和Nd/N共掺杂锐钛矿相TiO2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理研究了 N掺杂, Nd掺杂,和Nd/N共掺杂对锐钛矿相TiO2晶格参数、能带结构、电荷布居、电子态密度和光吸收性质的影响.结果表明,杂质的引入不同程度的改变了TiO2的晶格参数,Nd的掺杂使TiO6八面体畸变最大;N掺杂TiO2使带隙宽度减小,且在价带顶出现杂质能级;Nd掺杂和Nd/N共掺杂不仅使TiO2带隙宽度减小并在其价带和导带之间出现了空带,空带主要由Nd原子的4f轨道能级所贡献;由于禁带宽度的减小和杂质能级的出现使得掺杂后TiO2的吸收光谱的吸收边向可见光方向移动,增加了物质对光吸收的响应范围.     

扶手椅型石墨烯纳米带吸附镍、铜原子链的电子结构

采用基于密度泛函理论的第一性原理方法,研究了扶手椅型石墨烯纳米带吸附3d过渡金属磁性Ni和非磁性Cu单原子链的结构、电子性质和磁性.吸附体系经过弛豫后,不同宽度纳米带吸附单原子链的稳定结构是不同的.Ni比Cu原子链在石墨烯纳米带表面的吸附更为稳定.原子链吸附在纳米带的边缘洞位(即5AG-1、6AG-1和7AG-1位置)时较为稳定,且稳定程度随着纳米带宽度的增加而增加.原子链和石墨烯纳米带的相互作用使得Ni单原子链吸附体系的磁矩为零.Cu原子链吸附5AG-1的复合体系具有磁性.Ni原子链的吸附体系呈现出带隙较小的半导体性质,而Cu原子链的吸附体系全都表现出金属性质.