后掠翼边界层定常横流涡的非线性演化

横流失稳是后掠翼边界层主要的失稳形式.实验和数值研究发现在后掠翼边界层转捩之前,有一段较长的非线性幅值饱和阶段,因此线性稳定性不能有效预测横流失稳转捩过程,所以研究横流涡的非线性演化过程就极为必要.以NLF(2)-0415翼型为研究模型,在来流Mach数为0.8、后掠角为45°、攻角为-4°的条件下,用扰动方程计算了定常横流涡非线性演化过程.结果显示非平行性起着更加不稳定的作用.当基本波的幅值到达0.1时,非线性作用开始明显.横流涡经历了非线性幅值饱和过程,涡的形状呈现半蘑菇状,涡的涡轴与边界层外缘无粘势流平行.饱和涡使得原有流场发生极大的扭曲,流向速度和展向剖面出现了拐点.     

体布拉格光栅用于高功率光谱组束的研究

使用透射型体布拉格光栅组束两束光纤激光,实现了856 W光谱组束输出。总的光谱组束效率为73.7%,组束光束的横向质量因子为7.9,纵向质量因子为2.7。研究结果显示,虽然体光栅的角色散严重影响衍射光束的光束质量,但其并不影响透射光束的光束特性。由于当前宽谱光纤激光器的输出功率远大于窄线宽输出,使用宽谱光纤激光器(光谱带宽超过4nm)作为透射光束,能够在不降低组束效率和组束光束质量的前提下,有效提升使用体布拉格光栅进行光谱组束的总输出功率。     

考虑晶粒度的GH4169高温合金微铣削残余应力仿真与实验研究

微细铣削中,由于受加工余量限制,铣刀每齿进给量非常小甚至小于材料内部晶粒尺寸。当切削在晶粒间进行时会造成切削不连续,从而使铣削过程颤振急剧增大,引起加工表面质量下降,严重影响微型零件的疲劳寿命和使用性能。本研究基于Voronoi图建立多晶体几何模型,通过仿真与实验验证的方法对刀具刃口圆弧半径、切削深度和晶粒尺寸对已加工表面残余应力的影响规律进行详细研究,建立多元线性回归模型并进行显著性检验。对经热处理后具备不同晶粒尺寸的高温合金GH4169进行微铣削实验,通过X射线衍射法测量工件进给方向已加工表面的残余应力值,将实验值与预测值进行对比,从而验证残余应力预测模型的准确性。结果表明,其误差分布在2.18%～7.35%,不超过10%,说明残余应力的预测模型准确性较高。     

大型短脉冲激光装置中脉冲前沿畸变效应的研究

阐述了短脉冲激光装置中脉冲前沿畸变效应的产生机理和可能的畸变源.利用Fourier光学方法,建立了一个基于单程压缩构型的研究脉冲前沿畸变效应的理论模型,分析不同种脉冲前沿畸变效应对于压缩器输出脉冲的近场时空特性的影响.基于此,对一个在建的大口径（300 mm）短脉冲装置中的各种畸变源（包括可编程声光光谱色散滤波器、透镜色差以及劈板等元件）进行了数值计算.研究表明：近场输出脉冲宽度显著加宽,输出脉冲前沿形状不同于输入时的畸变形状,只有中心部分区域的脉冲前沿形状与输入类似,该区域的大小由系统带宽决定. 关键词： 脉冲前沿畸变 角色散 单程压缩 透镜     

用于补偿增益窄化效应的Rugate滤波器设计

采用Rugate膜系理论,分别根据钛宝石和钕玻璃介质增益窄化的特点,合理选择补偿增益窄化的调制函数,优化设计出了分别用于补偿钛宝石系统和钕玻璃系统增益窄化效应的Rugate滤波器.由普通均匀多层膜的特征矩阵方法近似分析了设计出的Rugate滤波器的光谱响应,数值模拟了Rugate滤波器的光谱补偿效果.结果显示,能比较好的符合光谱补偿的要求,可以用作补偿增益窄化效应的光谱调制滤波器. 关键词： 超短脉冲 增益窄化 光谱补偿 Rugate滤波器     

WENO格式物理/计算域变换精度对流动预测的影响

精细地捕捉激波及分离流对航空叶型/翼型设计具有重要意义。WENO(Weighted Essentially Non-Oscillatory)格式以其高间断分辨率和低耗散的特性得到广泛青睐。格式的构造都是基于均匀网格,而在实际应用中考虑计算量的问题,通常需要在梯度较大的地方进行局部加密,生成非均匀网格。坐标变换法是一种有效地将格式运用于非均匀网格的方法,而坐标变换的精度对格式特性的影响尚未得知,存在一定的盲目性。针对该问题,基于非均匀网格,开展不同精度坐标变换方法对有限差分WENO格式的精度、耗散影响研究;同时结合工程实际问题,研究不同精度非均匀网格处理方法对激波分辨率和大尺度涡捕捉能力的影响,并给出工程应用建议。     

基于目标任务性能的红外系统评价新方法

分析了美国对红外系统进行评价时的最准确的目标任务性能(TTP)模型。通过阐述TTP建模的理论依据,解释了它相对于Johnson准则的本质区别,主要在于系统阈值对比度概念和对被人眼感知的所有有效频率的积分。介绍了如何将TTP模型过渡到任务性能概率的实验过程,并通过实验数据和TTP的基本理念总结了它相对于Johnson准则的特点。     

田字形不对称电阻网络等效电阻的计算

本文运用丫-△等效互换的方法得出田字形不对称电阻网络等效电阻的数学表达式.     

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO_x/Si system

The damage on the atomic bonding and electronic state in a SiO_x(1.4-2.3 nm)/c-Si(150 μm) interface has been investigated.This occurred in the process of depositing indium tin oxide(ITO) film onto the silicon substrate by magnetron sputtering.We observe that this damage is caused by energetic particles produced in the plasma(atoms,ions,and UV light).The passivation quality and the variation on interface states of the SiO_x/c-Si system were mainly studied by using effective minority carrier lifetime(τ_(eff)) measurement as a potential evaluation.The results showed that the samples' τ_(eff)was reduced by more than 90%after ITO formation,declined from 107 μs to 5 μs.Following vacuum annealing at 200 ℃,the τ_(eff) can be restored to 30 μs.The components of Si to O bonding states at the SiO_x/c-Si interface were analyzed by x-ray photoelectron spectroscopy(XPS) coupled with depth profiling.The amorphous phase of the SiO_x layer and the "atomistic interleaving structure" at the SiO_x/c-Si interface was observed by a transmission electron microscope(TEM).The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds(or interface states) and effective minority carrier lifetime.After an appropriate annealing,the reduction of the Si dangling bonds between SiO_x and near the c-Si surface is helpful to improve the passivation effect.     

异核双原子和三原子分子在红外强激光场中的电离抑制

Ionization is the fundamental process in interaction of atoms/molecules with femtosecond strong laser fields. Comparing to atoms, molecules exhibit peculiar behaviors in strong-field ionization because of their diverse geometric structures, molecular electronic orbitals as well as extra nuclear degrees of freedom. In this study, we investigate strong field single and double ionization of carbon monoxide (CO) and carbon dioxide (CO₂) in linearly polarized 50-fs, 800-nm laser fields with peak intensity in the range of 2×10¹³ W/cm² to 2×10¹⁴ W/cm² using time-of-flight mass spectrometer. By comparing the ionization yields with that of the companion atom krypton (Kr), which has similar ionization potential to the molecules, we investigate the effect of molecular electronic orbitals on the strong-field ionization. The results show that comparing to Kr, no significant suppression is observed in single ionization of both molecules and in non-sequential double ionization (NSDI) of CO, while the NSDI probability of CO₂ is strongly suppressed. Based on our results and previous studies on homonuclear diatomic molecules (N₂ and O₂), the mechanism of different suppression effect is discussed. It is indicated that the different structure of the highest occupied molecular orbitals of CO and CO₂ leads to distinct behaviors in two-center interference by the electronic wave-packet and angular distributions of the ionized electrons, resulting in different suppression effect in strong-field ionization.