Molecular orbital calculations on transition metal complexes

INDO SCF MO calculations are reported for the complexes (C₅H₅)M(C₇H₇) (M = Ti, V and Cr), and for the corresponding V and Cr cations. The results correctly predict¹ A ₁ ground states for the V⁺ and the neutral Ti and Cr species, and for the neutral V and Cr⁺ complexes confirm the² A ₁ ground levels. The formally metald-levels followed theH ^core sequencee ₂<a ₁<e ₁, and the most important interactions were those between the metale ₂ level and the ligand C₇H₇ -orbitals, and between the metale ₁ level and the ligand C₅H₅ -orbitals. Calculations also satisfactorily reproduced other experimental quantities, and the results indicate that thee ₂ ligand interaction becomes more important, and thee ₁ ligand interaction less important, with increasing size of the ligand ring.     

Theoretical studies on the structures and electronic spectra of C75B−

Intermediate neglect of differential overlap (INDO) calculations were used to study the structure of C₇₅B^?—the isoelectronic molecule of C₇₆. It was found that the boron atom mainly substitutes the second carbon atom (there are 19 types of carbon atoms in C₇₆). The electronic spectra of all the possible isomers of C₇₅B^? were calculated based on the optimized geometries. It was shown that the UV‐Vis spectra of C₇₅B^? and C₇₆ resemble each other in many ways with the exception of the absorptions beyond 700 nm. The red shift of the absorptions was rationalized and nature of transition of the peaks discussed. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2003     

Cn78(C2v)的电子结构和UV谱

用INDO(Intermediate neglect differential overlap)系列方法对Cn78进行系统研究.结果表明,Cn78(G2v)比Cn78(C2v')稳定;Cn78(C2v)和Cn78(C2v')未发生Jahn-Teller畸变;Cn78随n绝对值增大,体系能量升高.以优化构型为基础,首次计算Cn78电子光谱,对电子跃迁进行理论指认,讨论Cn78光谱特征吸收与C78相比发生红移的原因.     

The Generalized Parameterization Procedure for Semiempirical MO Method and Calculation of ionization Potentials for the Fourth-Period Element Molecules

This study presents a set of the generalized parameters from a unique resource for the elements which are from the first-period to the fourth-period (H to Xe). In addition, these series of parameters are used to examine forty-five compounds consisting of the fourth-period elements and the second-period transition metal elements. Herein, the major calculation theory applied is the s-p-d INDO MO method. To verify the reliability of the molecular calculations, similar calculations of the STO-3G and STO-3G* ab inito methods, along with the semiempirical PM3 and AM1 methods are also compared. Results in this study demonstrate that the s-p-d INDO MO computed with the generalized parameter is the best available method.     

Intermediate neglect of differential overlap spectroscopic studies on lanthanide complexes

Summary The Intermediate Nelgect of Differential Overlap model for spectroscopy has been extended to lanthanide complexes by including spin-orbit coupling. The method uses atomic spectroscopy and model Dirac-Fock calculations on the lanthanide atoms and ions to obtain ionization potentials, Slater-Condon factors and basis sets. The spin-orbit interaction strength, (nl), is acquired from atomic spectroscopy, and only one-center terms are formally included. Calculation then proceeds using one open-shell operator for all sevenf-orbitals initially assumed degenerate to generate starting non-relativistic molecular orbitals for the subsequent configuration-interaction and spin-orbit calculation.Calculations are performed on the monoxides La, Ce, Gd, and Lu where there are ample experimental assignments. In general, the results are quite good, suggesting that the calculated energies, oscillator strengths and spin-orbit splittings can be used with success in assigning spectra, even in those cases wherejj-coupling is of intermediate strength.     

On the molecular electrostatic potentials obtained with CNDO and INDO wave functions

Molecular electrostatic potentials computed with CNDO/2 and INDO wave functions are shown to present systematic differences with respect to ab initio potentials in the case of out-of-plane potentials and in-plane vicinal hetero atoms in planar hetero molecules.     

苯基稀土钆配合物的成键性质研究

苯基稀土钆配合物具有Ln-Cσ键,由于这类配合物不稳定且分离困难,故其研究工作开展得很少~[1,2],其电子结构的研究尚未见报道.最近,我们合成了新型的苯基稀土配合物C_6H_5LnCl_2·nTHF(Ln=Pr、Sm、Gd,n=3,4)并测定了其晶体结构~[3],本文报道了苯基稀土钆配合物的电子结构和成键性质,并与中性苯稀土配合物的成键性质~[4]进行了比较.     

An intermediate neglect of differential overlap (INDO) technique for lanthanide complexes: studies on lanthanide halides

An intermediate neglect of differential overlap method of use for examining the electronic structure of lanthanide complexes is developed. It is characterized by a basis set obtained from relativistic Dirac-Fock atomic calculations, the inclusion of all one-center two-electron integrals, and a parameter set based on molecular geometry.Lanthanide halides MX₂, MX₃ and MX₄ are studied here, as well as initial results for the twelve coordinate Ce(NO₃)₆ ^–2 ion. Geometries obtained are in excellent agreement with experimental values when available. Many MX₃ complexes are found to be pyramidal, and EuCl₂ and YbCl₂ are calculated to be bent even at the SCF level. Models invoking London type forces are therefore not required. Ionization potentials are calculated for the trihalides (SCF) and are in reasonable agreement with experiment.Contrary to conclusion of others, f-orbital participation, although small, is required — at least in this model — to obtain the spread of metal to halide bond distance observed in these complexes. However f-orbital participation does not seem to be significant even in the twelve coordinate Ce(NO₃)₆ ^–2 complex: rather the large coordination number seems to be a consequence of the relatively large size of the lanthanide ion.     

Direct INDO/SCI method for excited state calculations

Intermediate neglect of differential overlap (INDO) is the most commonly utilized semiempirical technique for performing excited state calculations on large organic systems such as organic semiconductors and fluorescent dyes. The calculations are typically done at the singles-configuration interaction (SCI) level. Direct methods provide a more efficient means of performing configuration interaction (CI) calculations, and the computational trade offs associated with various approaches to direct-CI theory have been well characterized for ab initio Hamiltonians and high-order CI. However, the INDO and SCI approximations lead to a new set of trade offs. In particular, application of the electron-electron interactions in the atomic basis leads to savings in computational time that scale as the number of atomic orbitals, which for a large organic system can be two to three orders of magnitude. These savings are largest when only a few low-lying excited states are generated and when a full SCI basis, which includes excitations between all filled and empty molecular orbitals, is used. In addition, substantial memory savings are achieved in the direct method by avoiding the evaluation of the two electron integrals in the molecular orbital basis. The method is demonstrated by calculating the absorption spectrum of a poly(paraphenylenevinylene) oligomer containing 16 phenyl rings.