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以RuCl3,联吡啶为原料,并在其中分别加入氯化铒、氯化钕和氯化钆,制备了铒掺杂、钕掺杂及钆掺杂联吡啶钌探针分子,将三种探针分子分别加入到MMA中,在引发剂引发下进行聚合,获得三种稀土掺杂的温敏漆样品.对探针分子及温敏漆进行了红外光谱、紫外吸收和荧光光谱测试.红外光谱测试结果表明,探针分子中联吡啶钌的结构没有被破坏.紫外吸收光谱表明温敏漆的最佳吸收波段位于200~550 nm范围内.选择410 nm作为激发光源,发现三种温敏漆在610 nm左右有很强的荧光发射峰,并且随着温度的升高,三种温敏漆的荧光强度均减弱,说明具有良好的温度猝灭特性,其中钆掺杂温敏漆灵敏度最强. 相似文献
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合成并通过单晶衍射表征了3个配合物[CuLCl2]·CH3CN (1),[CuLBr2]·CH3CN (2)和[ZnL(NO3)2]·CH3CN (3)(L=2-(5-氯-8-喹啉氧基)-1-(吡咯烷-1-基)乙酮)。在配合物1和2中,五配位的铜离子采取扭曲的四方锥配位构型,与来自配体L的2个氧原子和1个氮原子及2个卤离子配位。而在配合物3中,锌离子与1个三齿配位的配体L,1个单齿配位的硝酸根和1个双齿配位的硝酸根配位,配位构型为扭曲的八面体。乙腈溶液中,配合物1和2在410 nm处的最大荧光发射峰与配体L的相似,强度有所降低。而配合物3由于配体到锌离子之间的能量转移,最大荧光发射峰红移至430 nm。 相似文献
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Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction 下载免费PDF全文
The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices. 相似文献
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The nonradiative charge-transfer cross sections for protons colliding with Rb(5s) atoms are calculated by using the quantum-mechanical molecularorbital close-coupling method in an energy range of 10 3 keV-10 keV.The total and state-selective charge-transfer cross sections are in good agreement with the experimental data in the relatively low energy region.The importance of rotational coupling for chargetransfer process is stressed.Compared with the radiative charge-transfer process,nonradiative charge transfer is a dominant mechanism at energies above 15 eV.The resonance structures of state-selective charge-transfer cross sections arising from the competition among channels are analysed in detail.The radiative and nonradiative charge-transfer rate coefficients from low to high temperature are presented. 相似文献
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稀土钇掺杂Eu(TTA)3/PMMA温敏漆的制备及性能分析 总被引:2,自引:2,他引:0
本文以氯化铕、氯化钇、噻吩甲酰基三氟丙酮(TTA)为原料合成了钇掺杂Eu(TTA)3探针分子。将探针分子掺杂到聚甲基丙烯酸甲酯(PMMA)基质中,获得稀土钇掺杂Eu(TTA)3/PMMA温敏漆。采用IR、紫外吸收光谱和激发发射光谱对探针分子结构及温敏漆荧光特性进行了表征。红外光谱表明,稀土Eu(Y)与TTA形成配位键,且钇的掺入未改变Eu(TTA)3结构。紫外吸收光谱表明,探针分子的最佳吸收波段位于290~376 nm处。激发发射光谱表明,在340 nm激发下,温敏漆在614 nm处有最强发射峰,且钇对Eu(TTA)3发光具有增益作用,当钇含量为50%时,增益作用最强。不同温度下发射光谱表明,随着温度的升高,温敏漆的荧光发射强度逐渐减弱,说明温敏漆具有良好的温度猝灭特性,且掺入钇后温敏漆的测温灵敏度有所提高。 相似文献
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通过改变溶剂热反应温度,合成了2个结构不同的镉配合物[Cd2(H2ppty)2(SO4)2(H2O)2]·3H2O(1)和[Cd2(ppty)(SO4)(H2O)2]n(2)(H2ppty=3,5-bis-(1H-pyrazol-3-yl)-[1,2,4]triazol-4-ylamine)。进一步的研究表明,1和2的结构分别包含有双核和四核镉簇单元,呈现出零维和二维的结构。并且在室温下对2个配合物的荧光性质也进行了测试。固体紫外漫反射表明1和2的光学带隙分别为1.87和2.32 eV,因此它们对亚甲基蓝的光降解反应表现出了良好的催化活性。 相似文献
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合成并通过单晶衍射表征了3个配合物[CuLCl2]·CH3CN(1),[CuLBr2]·CH3CN(2)和[ZnL(NO3)2]·CH3CN(3)(L=2-(5-氯-8-喹啉氧基)-1-(吡咯烷-1-基)乙酮)。在配合物1和2中,五配位的铜离子采取扭曲的四方锥配位构型,与来自配体L的2个氧原子和1个氮原子及2个卤离子配位。而在配合物3中,锌离子与1个三齿配位的配体L,1个单齿配位的硝酸根和1个双齿配位的硝酸根配位,配位构型为扭曲的八面体。乙腈溶液中,配合物1和2在410 nm处的最大荧光发射峰与配体L的相似,强度有所降低。而配合物3由于配体到锌离子之间的能量转移,最大荧光发射峰红移至430 nm。 相似文献