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11.
为研究A型钝感炸药冲击起爆反应演化过程,进行了火炮驱动蓝宝石飞片的一维平面冲击实验。实验中采用光子多普勒测速仪(Photonic Doppler velocimetry,PDV)技术测量冲击起爆后台阶型炸药的粒子速度。在炸药不同厚度台阶的后界面固定镀铝膜的楔形氟化锂(LiF)窗口,利用阻抗匹配将PDV测量的LiF窗口波后粒子速度转化为炸药样品波后粒子速度。比较组合式电磁粒子速度计和PDV两种测速技术,结果表明,相较于组合式电磁粒子速度计,PDV测量的粒子精度更高。简要分析了PDV测速探头角度、探头孔径、窗口折射率等影响,得到PDV测速的相对不确定度小于1%。 相似文献
12.
We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semiinsulating GaAs wafer. The wafer was implanted with 400-kev As+ in the concentration of 1016 ions/cm2.To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 ℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films,respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. 相似文献
13.
We reported a passive Q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. 相似文献