基于迭代反演的非磁性材料复介电常数测量及初值选取方法

复介电常数是反映材料宏观电磁性质的重要参数,电磁领域相关材料和器件的选取、设计及应用都必须基于材料在工作频段的电磁参数.数值迭代法是反演计算材料复介电常数的重要方法,但一直存在难以准确给出迭代初始值的问题.本文基于吸波材料介电常数与反射率的关系,提出了一种迭代法反演吸波材料介电常数的初值选取方法,以此为基础构建了一种利用反射参数反演计算单层吸波材料、多层材料中唯一未知层材料复介电常数的方法,并通过实例测试验证了方法的有效性.     

PMMA/SiO2透明块体材料的热性能分析与微观结构表征

以正硅酸乙酯为前驱体,采用无溶剂水解技术,制备出了均一、稳定、透明的二氧化硅溶胶,通过透射电镜分析,粒径在100nm左右;在溶胶中加入甲基丙烯酸甲酯（MMA）和偶氮二异丁腈（AIBN）,采用热固化的方式制备出透明的块体PMMA/SiO2杂化材料,通过差热分析、热重和透射电镜表征杂化材料的热性能和微观结构,实验结果表明：当体系中的SiO2含量超过20%时,杂化材料无明显的玻璃化转变温度;无机相均匀分散在有机相中,两相之间没有明显的相分离现象,制备出均一的杂化材料。     

A wideband metamaterial absorber based on a magnetic resonator loaded with lumped resistors

<正>A wideband metamaterial absorber（MA） based on a magnetic resonator loaded with lumped resistors is presented. It is composed of a one-dimensional periodic array of double U-shaped structured magnetic resonators loaded with lumped resistors,a dielectric substrate,and a metal plate.We simulated,fabricated,measured,and analyzed the MA. The experimental results show that the reflectance(S₁₁) is below -10 dB at normal incidence in the frequency range of 7.7 GHz-18 GHz,and the peak value is about—20 dB.Simulated power loss density distributions indicate that wideband absorption of the MA is mainly attributable to the lumped resistors in the magnetic resonator.Further investigations indicate that the distance between two unit cells along the magnetic field direction significantly influences the performance of the MA.     

An ultrathin wide-band planar metamaterial absorber based on a fractal frequency selective surface and resistive film

We propose an ultrathin wide-band metamaterial absorber （MA） based on a Minkowski （MIK） fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.