联合波叠加法的全息理论与实验研究

当空间声场中同时存在多个相干声源时，运用常规近场声全息方法无法重建每个相干声源表面的声学信息，当然也无法预测每个声源单独产生的空间声场，相干声场的全息重建与预测已成为全息技术推广应用过程中亟待解决的问题.在提出联合波叠加法并将其应用于空间声场变换的基础上，对其进行了实验研究.通过对实际相干声场的全息重建与预测，验证了常规波叠加法在相干声场重建中的局限性、联合波叠加法在相干声场全息重建与预测过程的可行性和准确性，还研究了Tikhonov正则化方法在抑制声学逆问题的非适定性中的有效性和滤波系数的选择原则的可行性，以提高全息重建与预测的精度. 关键词： 近场声全息 联合波叠加 相干声场 Tikhonov正则化     

细胞内溶液的非理想性对细胞最优化低温保存程序的影响

为了对细胞的最优化低温保存方案提供理论预测,考虑细胞内溶液为非理想溶液,建立了一个新的胞内冰晶成核与生长模型.与基于修正的Mazur方程的理想溶液模型相比,新模型进一步耦合了Fahy的水输运方程与冰晶成核、扩散控制的冰晶生长理论.使用改进后的胞内冰模型详细研究了以甘油为低温保护剂的老鼠卵细胞的冷冻过程.通过比较分析两种模型下降温速率、初始甘油浓度对胞内溶液体积、胞内冰晶体积份额等的影响,我们得出较低的降温速率下,两种模型预测的结果具有比较显著的差异,而高降温速率条件下,两种模型预测的结果一致.     

声场分离技术及其在近场声全息中的应用

提出空间声场分离技术，突破了近场声全息（NAH）的应用局限.它们的局限在于全息面一侧的声场必须是自由声场，即要求所有的声源必须位于另一侧.利用波数域内的波场外推理论及声压的标量叠加原理，建立起声场分离技术的双全息面实现方法，利用波数域内的Euler公式及粒子振速的矢量叠加原理，建立起该技术的单全息面实现方法.该技术的一个突出优点是在具有背景噪声的全息测量情况下, 可以消除背景噪声对全息变换结果的影响.理论的推导表明该技术方法的正确性，而仿真算例和实验则显示该技术的可行性和有效性. 关键词： 声全息 波数域 声场分离 背景噪声     

The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I–V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diflraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature,the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.