退火温度对镶嵌于SiO2膜中的Ge纳米晶结构的影响

采用磁控溅射及退火的方法制备了含Ge纳米晶的SiO2复合膜,应用拉曼散射和X射线衍射技术研究不同退火温度下的Ge纳米晶结构.结果表明:Ge纳米晶的结晶温度约为750 ℃.运用声子限域模型(RWL model)对样品的拉曼散射光谱进行拟合,确定出样品中Ge纳米晶的尺寸.通过XRD谱计算复合膜的内部压应力,得出由其引起的拉曼峰位的蓝移量,得出结论:压应力是造成拉曼模拟曲线与实验曲线峰位偏离的主要原因.     

用磁控溅射和退火方法制备多层锗纳米晶

以Si为衬底,SiO2+Ge为复合靶,用超晶格方法(SiO2+Ge层和SiO2 + GeO2层交替生长)和磁控溅射技术制备镶嵌于Si/Ge氧化膜中的多层Ge纳米晶.X射线衍射(XRD)结果表明:退火样品中有Ge纳米晶生成.Ge纳米晶的声子限域效应引起Raman散射谱的Ge-Ge振动峰向低频移动.X射线光电子能谱(XPS)分析表明Ge主要以Ge0和Ge4+形式分别存在于所制备的超晶格中的SiO2+Ge层和SiO2+GeO2层中.透射电子显微镜(TEM)研究表明,Ge纳米晶被限制在SiO2+Ge层中且结晶性好.实验结果说明,相比于通常的单层介质膜方法,用该超晶格方法极大地提高了Ge纳米晶的密度,尺寸和空间分布的均匀性.     

基于超分子结构共掺杂纳米复合薄膜的制备与荧光特性

A novel materials design procedure based on the co-doping of metal nanoparticle and azo dye compound (MNPADC) is developed to improve the properties of functional molecules. The synthesized materials were characterized by transmission electron micrograph (TEM), ultraviolet-visible absorption spectra (UV-Vis) and fluorescence spectra (FS). It was found that the fluorescence intensity of methyl orange (MO) was enhanced by 5 times in the aqueous composite system doped with silver nanoparticles whereas it was reduced by 15% and 20% in composite films with co-mixing and coating structures, respectively. The results indicate that the properties of functional molecules can be greatly improved in composite film with supra molecular structure and that the procedure presented here is effective.