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Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor 下载免费PDF全文
In this paper, the positive influence of a uni-traveling-carrier(UTC) structure to ease the contract between the responsivity and working speed of the In P-based double hetero-junction phototransistor(DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal(3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 d B. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously. 相似文献
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本文计算了应变Si1-xGex层的本征载流子浓度及导带和价带有效态密度.首次用解析的方法研究了它们与Ge组份x和温度T的依赖关系.我们发现,随Ge组份x的增加,由于Si1-xGex层中应力的影响,导带和价带有效态密度随之快速减少,而本征载流子浓度却随之而近乎指数式地增加.而且,温度T越低,导带和价带有效态密度随Ge组份x的增加而减少得越快,而本征载流子浓度上升得越快.同时,我们还发现,具有大Ge组份x的应变Si1-xGex层,其用Si的相应参数归一化的导带和价带有效态密度及它们的积与温度T的依赖关系弱,而具有小Ge组份x的应变Si1-xGex层,上述归一化参数与温度T的依赖关系强,这和目前仅有的文献[8]中它们于温度依赖关系的定性研究结果相一致.本文得到的定量结果对探索应变SiGe层的物理性质、对应变SiGe层基器件的设计、模拟及对低温SiGe器件物理的理解有重要意义. 相似文献
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自旋转移矩辅助电压调控磁各向异性磁隧道结(STT辅助VCMA-MTJ)作为非易失性全加器(NV-FA)中的核心部件,具有切换速度快、功耗低,稳定性好等优点,将在物联网、人工智能等领域具有良好的发展前景.然而随着磁隧道结(MTJ)尺寸的不断缩小以及芯片集成度的不断提高,工艺偏差对MTJ及NV-FA电路性能的影响将变得越来越显著.本文基于STT辅助VCMA-MTJ磁化动力学,在充分考虑薄膜生长工艺偏差以及刻蚀工艺偏差影响的情况下,建立了更为精确的STT辅助VCMA-MTJ电学模型,研究了上述两种工艺偏差对MTJ及NV-FA电路性能的影响.结果表明,当自由层厚度偏差γtf≥6%或氧化层厚度偏差γtox≥0.7%时,MTJ将无法实现状态切换;当隧穿磁阻率偏差β增大到30%时,读取裕度SM将下降高达17.6%.对于NV-FA电路,通过增大电压Vb1以及写‘0’时增大电压Vb2或写‘1’时减小Vb2,可有效降低非易失性加数写入错误率;通过增大逻辑运算驱动电压Vdd,可... 相似文献
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The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor(AI), such as the effective inductance Ls, quality factor Q,and self-resonant frequency ω_0 is analyzed based on 0.35-μm Si Ge Bi CMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω_0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of Si Ge HBTs. On the other hand, for AI with fixed HBT size, smaller JCis beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω_0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω_0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors. 相似文献
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A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT 下载免费PDF全文
The product of the cutoff frequency and breakdown voltage( fT×BVCEO) is an important figure of merit(FOM) to characterize overall performance of heterojunction bipolar transistor(HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator(SOI) Si Ge HBT to simultaneously improve the FOM of fT×BVCEOand thermal stability is presented by using two-dimensional(2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness(TBOX) on fT, BVCEO, and the FOM of fT×BVCEOare presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEOto some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT,BVCEO, and the FOM of fT×BVCEOcan be improved by increasing SOI insulator Si O_2 layer thickness TBOXin SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of Si O_2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEOis improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer into collector region provides an effective method to improve SOI Si Ge HBT overall performance. 相似文献
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Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability 下载免费PDF全文
With the aid of a thermal-electrical model,a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed.The method can effectively enhance the thermal stability of the devices without sacrificing the design time.Taking a 40-finger heterojunction bipolar transistor for example,the device with non-uniform emitter finger lengths is optimized and fabricated.Both the theoretical and the experimental results show that,for the optimum device,the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length.Furthermore,the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases,which is ascribed to the improvement of the thermal resistance in the optimum device.A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths. 相似文献
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本计算了应变Si1-xGex层的本征载流子浓度及导带和价带有效态密度。首次用解析的方法研究了它们与Ge组份x和温度T的依赖关系。我们发现,随Ge组份x的增加,由于Si1-xGex层中应力的影响,导带和价带有效态密度随之快速减少,而本征载流子浓度却随之而近乎指数式地增加。而且,温度T越低,导带和价带有效态密度随Ge组份x的增加而减少得越快,而本征载流子浓度上升得越快。同时,我们还发现,具有大Ge组 相似文献