Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

二维空间电荷限制流实验研究

对基于圆柱平板结构电子枪的二维空间电荷限制流进行了研究.采用粒子模拟软件详细探讨了二维空间电荷限制流随间距、电压、逸出功、温度、阴极结构等物理量的变化关系.设计了一种实用圆柱平板结构电子枪,对其空间电荷限制流和发射性能进行了实验探索.通过测试,发射电流与二维模型的比较吻合,远大于一维模型的结果.     

周期极化非线性晶体中太赫兹波辐射研究

 从理论上详细研究了飞秒激光在周期极化非线性晶体中由光整流效应产生的太赫兹（THz）波辐射。利用天线辐射原理和光栅衍射理论，着重研究THz波辐射的频域场和时域场的分布。讨论和分析了THz波辐射的中心频率、频谱宽度和电场随辐射角的变化。研究表明，THz波的带宽反比于晶体的长度或光栅数，电场随辐射角呈准谐波变化。     

亚太赫兹波折叠波导扩展互作用振荡器研究

对于亚太赫兹波段扩展互作用振荡器(EIO),本文采用折叠波导作为慢波谐振系统,研究了周期数对高频特性的影响,计算了特征阻抗、起振电流随周期数的变化规律,为有效降低起振电流提供了途径.在此基础上,采用PIC进行模拟研究,探讨了EIO在弱电流连续波和强电流脉冲工作方式下的注波互作用和输出特性,深入分析了EIO的周期数调谐、电压调谐的特性.在连续波工作时,EIO的输出功率约2.5 W;在脉冲工作方式下,通过电压调谐,EIO的输出功率约26-50 W,激发频率约105.26-105.31 GHz.采用慢走丝加工方法,探讨了高频系统的两种加工方式,测试了慢波系统的谐振特性、输出窗的传输特性,并与模拟结果进行了对比分析,验证了该加工方法在该频段的可行性和实用性,为实用型整管研究提高了重要依据.     

高电流密度圆柱状电子光学系统设计

设计了高电流密度圆柱状电子枪,并分析了枪体参数对电子注品质的影响;运用径向力平衡理论计算了聚焦磁场.三维模拟软件CSTPARTICLESTUDIO模拟显示,在枪体电极和空间电荷形成的静电场,以及聚焦磁场作用下,电子呈角向先变速后匀速螺旋状运动,其旋转半径始终与出射阴极面时的半径相同,从而在枪区和互作用通道内维持了注包络水平.模拟结果与设计理论相符.注平均电流密度达到24·4A/cm2,层流性良好,填充因子76·7%,流通率100%.     

扩展互作用谐振腔的模拟分析

 分析了扩展互作用谐振腔的工作原理、特点以及工作过程，并利用PIC粒子模拟程序对其进行了数值模拟，分析了阴极电压、电子注半径、谐振腔个数以及谐振腔周期长度对输出功率、频率及转换效率的影响。结果表明：当阴极电压为28.5~30.0 kV时，谐振腔能正常工作；当电子注半径为1.4 mm，谐振腔个数为4，阴极电压为29 kV时输出功率和转换效率最大，输出功率为128 kW，频率12.9 GHz，转换效率达37.93%；输出频率随谐振腔周期长度的变小而增大。     

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.